公开(公告)号：WO2023076492A1

公开(公告)日：2023-05-04

申请号：PCT/US2022/048051

申请日：2022-10-27

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： PLATOW, Wilhelm ,  SATOH, Shu ,  BASSOM, Neil

IPC: H01J37/317 ,  H01J37/05

Abstract: An ion implantation systemlOO has an ion source 104 to generate an ion beam 108, and a mass analyzer 112 to define a first ion beam 114 having desired ions at a first charge state. A first linear accelerator 116 accelerates the first ion beam to a plurality of first energies. A charge stripper 118 strips electrons from the desired ions defining a second ion beam 120 at a plurality of second charge states. A first dipole magnet 124 spatially disperses and bends the second ion beam at a first angle 125. A charge defining aperture 126 passes a desired charge state of the second ion beam while blocking a remainder of the plurality of second charge states. A quadrupole apparatus 128 spatially focuses the second ion beam, defining a third ion beam 130. A second dipole magnet 132 bends the third ion beam at a second angle 133. A second linear accelerator 134 accelerates the third ion beam. A final energy magnet 136 bends the third ion beam at a third angle 137, and wherein an energy defining aperture 138 passes only the desired ions at a desired energy and charge state.

公开(公告)号：WO2022011330A2

公开(公告)日：2022-01-13

申请号：PCT/US2021/041233

申请日：2021-07-12

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： COLVIN, Neil ,  BASSOM, Neil ,  WU, Xiangyang

IPC: H01J37/08 ,  C23C14/48 ,  H01J37/317

Abstract: An ion implantation system (101) has a chlorine based source material (113), such as aluminum trichloride, germanium (iv) chloride, indium (i) chloride, indium (iii) chloride, gallium (ii) chloride, and gallium (iii) chloride. An ion source (108) is configured to ionize the chlorine based source material and form an ion beam (112). The ionization of the chlorine based source material further forms a by-product having a non-conducting material containing chlorine. A hydrogen introduction apparatus (145) is configured to introduce a reducing agent including hydrogen to the ion source, such as hydrogen gas or phosphine. The reducing agent is configured to alter a chemistry of the non-conducting material to produce a volatile gas by-product. A beamline assembly (104) is configured to selectively transport the ion beam, and an end station (106) is configured to accept the ion beam for implantation of ions into a workpiece (118).

公开(公告)号：WO2020247378A1

公开(公告)日：2020-12-10

申请号：PCT/US2020/035723

申请日：2020-06-02

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： SPORLEDER, David ,  BASSOM, Neil ,  COLVIN, Neil ,  AMEEN, Mike ,  XU, Xiao

IPC: H01J37/317 ,  C23C14/06 ,  C23C14/48 ,  H01J37/08

Abstract: An ion source assembly (202) and method has a source gas supply (210) to provide a molecular carbon source gas (211) to an ion source chamber (206). A source gas flow controller (219) controls flow of the molecular carbon source gas to the ion source chamber. An excitation source (214) excites the molecular carbon source gas to form carbon ions and radicals. An extraction electrode (207) extracts the carbon ions from the ion source chamber, forming an ion beam (204). An oxidizing co-gas supply (220) provides oxidizing co-gas (221) to chamber. An oxidizing co-gas flow controller (222) controls flow of the oxidizing co-gas to the chamber. The oxidizing co-gas decomposes and reacts with carbonaceous residues and atomic carbon forming carbon monoxide and carbon dioxide within the ion source chamber. A vacuum pump system (234) removes the carbon monoxide and carbon dioxide, where deposition of atomic carbon within the ion source chamber is reduced and a lifetime of the ion source is increased.

公开(公告)号：WO2022240998A1

公开(公告)日：2022-11-17

申请号：PCT/US2022/028786

申请日：2022-05-11

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： PLATOW, Wilhelm ,  SILVERSTEIN, Paul ,  BASSOM, Neil ,  FARLEY, Marvin ,  SPORLEDER, David

IPC: H01J37/08 ,  H01J37/317 ,  H01J27/08 ,  H01J2237/0807 ,  H01J27/024 ,  H01J37/3171

Abstract: An ion source has an arc chamber having first and second ends and an aperture plate to enclose a chamber volume. An extraction aperture is disposed between the first and second ends. A cathode is near the first end of the arc chamber, and a repeller is near the second end. A generally U-shaped first bias electrode is on a first side of the extraction aperture within the chamber volume. A generally U-shaped second bias electrode is on a second side of the extraction aperture within the chamber volume, where the first and second bias electrodes are separated by a first distance proximate to the extraction aperture and a second distance distal from the extraction aperture. An electrode power supply provides a first and second positive voltage to the first and second bias electrodes, where the first and second positive voltages differ by a predetermined bias differential.

公开(公告)号：WO2020046731A1

公开(公告)日：2020-03-05

申请号：PCT/US2019/047837

申请日：2019-08-23

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： BASSOM, Neil

IPC: H01L21/68 ,  G01N21/95

Abstract: A workpiece alignment system has a light emission apparatus to direct a beam of light toward a first side of a workpiece through a first polarizer apparatus. A light receiver apparatus positioned on a second side of the workpiece receives the beam of light through a second polarizer apparatus between the workpiece and the light receiver apparatus. A workpiece support supports the workpiece. A rotation device selectively supports and rotates the workpiece support about a support axis. A controller determines a position of the workpiece based on an amount of the beam of light received by the light receiver apparatus. The controller determines a position of the workpiece when the workpiece is supported and rotated based, at least in part, on a rotational position of the workpiece support and at least a portion of the beam of light received by the light receiver apparatus.

公开(公告)号：WO2022093404A1

公开(公告)日：2022-05-05

申请号：PCT/US2021/049406

申请日：2021-09-08

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： COLVIN, Neil ,  BASSOM, Neil ,  XU, Xiao

IPC: H01J37/08 ,  C23C14/48 ,  H01J37/317

Abstract: An ion implantation system 101, ion source 108, and method are provided, where an ion source is configured to ionize an aluminum- based ion source material 113,132 and to form an ion beam 112 and a by-product including a non-conducting material. An etchant gas mixture has a predetermined concentration of fluorine and a noble gas that is in fluid communication with the ion source. The predetermined concentration of fluorine is associated with a predetermined health safety level, such as approximately a 20% maximum concentration of fluorine. The etchant gas mixture can have a co-gas with a concentration less than approximately 5% of argon. The aluminum-based ion source material can be a ceramic member, such as a repeller shaft, a shield, or other member within the ion source.

公开(公告)号：WO2021257712A2

公开(公告)日：2021-12-23

申请号：PCT/US2021/037642

申请日：2021-06-16

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： PLATOW, Wilhelm ,  BASSOM, Neil ,  SATOH, Shu ,  SILVERSTEIN, Paul ,  FARLEY, Marvin

IPC: H01J37/08 ,  H01J1/20 ,  H01J27/20 ,  H01J27/08 ,  H01J1/025 ,  H01J1/52 ,  H01J2201/19 ,  H01J2203/04 ,  H01J2237/08 ,  H01J2237/082

Abstract: An ion source for forming a plasma has a cathode with a cavity and a cathode surface defining a cathode step. A filament is disposed within the cavity, and a cathode shield has a cathode shield surface at least partially encircling the cathode surface. A cathode gap is defined between the cathode surface and the cathode shield surface, where the cathode gap defines a tortured path for limiting travel of the plasma through the gap. The cathode surface can have a stepped cylindrical surface defined by a first cathode diameter and a second cathode diameter, where the first cathode diameter and second cathode diameter differ from one another to define the cathode step. The stepped cylindrical surface can be an exterior surface or an interior surface. The first and second cathode diameters can be concentric or axially offset.

公开(公告)号：WO2020197938A1

公开(公告)日：2020-10-01

申请号：PCT/US2020/023664

申请日：2020-03-19

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： BASSOM, Neil ,  COLVIN, Neil ,  HSIEH, Tseh-Jen ,  AMEEN, Michael

IPC: H01J37/08 ,  H01J27/02 ,  H01J49/10

Abstract: An ion source is configured to form an ion beam and has an arc chamber enclosing an arc chamber environment. A reservoir apparatus can be configured as a repeller and provides a liquid metal to the arc chamber environment. A biasing power supply electrically biases the reservoir apparatus with respect to the arc chamber to vaporize the liquid metal to form a plasma in the arc chamber environment. The reservoir apparatus has a cup and cap defining a reservoir environment for the liquid metal that is fluidly coupled to the arc chamber environment by holes in the cap. Features extend from the cup into the reservoir and contact the liquid metal to feed the liquid metal toward the arc chamber environment by capillary action. A structure, surface area, roughness, and material modifies the capillary action. The feature can be an annular ring, rod, or tube extending into the liquid metal.

公开(公告)号：WO2023076575A2

公开(公告)日：2023-05-04

申请号：PCT/US2022/048194

申请日：2022-10-28

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： COLVIN, Neil ,  BASSOM, Neil ,  ABESHAUS, Joshua

IPC: H01J37/08 ,  H01J27/08 ,  H01J2237/006 ,  H01J2237/0213 ,  H01J2237/31701 ,  H01J37/32412 ,  H01J37/3244 ,  H01J37/32651 ,  H01J37/32724

Abstract: An ion source has arc chamber having one or more radiation generating features, an arc chamber body enclosing an internal volume, and at least one gas inlet aperture defined therein. A gas source provides a gas such as a source species gas or a halide through the gas inlet aperture. The source species gas can be an aluminum-based ion source material such as dimethylaluminum chloride (DMAC). One or more shields positioned proximate to the gas inlet aperture provide a fluid communication between the gas inlet aperture and the internal volume, minimize a line-of-sight from the one or more radiation generating features to the gas inlet aperture, and substantially prevent thermal radiation from reaching the gas inlet aperture from the one or more radiation generating features.

公开(公告)号：WO2022094381A1

公开(公告)日：2022-05-05

申请号：PCT/US2021/057529

申请日：2021-11-01

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： COLVIN, Neil ,  BASSOM, Neil ,  MOORE, Edward

IPC: H01J37/08 ,  H01J37/317 ,  H01J27/08

Abstract: An ion implantation system, ion source, and method are provided having a gaseous aluminum-based ion source material. The gaseous aluminum-based ion source material can be, or include, dimethylaluminum chloride (DMAC), where the DMAC is a liquid that transitions into vapor phase at room temperature. An ion source receives and ionizes the gaseous aluminum-based ion source material to form an ion beam. A low-pressure gas bottle supplies the DMAC as a gas to an arc chamber of the ion source by a primary gas line. A separate, secondary gas line supplies a co-gas, such as a fluorine-containing molecule, to the ion source, where the co-gas and DMAC reduce an energetic carbon cross-contamination and/or increase doubly charged aluminum.