公开(公告)号：US20040253760A1

公开(公告)日：2004-12-16

申请号：US10462310

申请日：2003-06-13

Applicant: Agency For Science, Technology And Research

Inventor： Qingxin Zhang ,  Zhe Wang

IPC: H01L021/00

CPC classification number: B81C1/00666 ,  B81B2201/0257 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81C2201/0164 ,  H04R31/003

Abstract: A method of fabricating a highly perforated silicon diaphragm is described. A single crystal silicon substrate of a first conductivity type is provided. First ions of a second conductivity type opposite the first conductivity type are implanted into the single crystal silicon substrate to form an etch stop layer. Second ions of the first conductivity type are selectively implanted into the single crystal silicon substrate to form a pattern of holes in a portion of the substrate. Third ions of the first conductivity type are implanted overlying the pattern of holes and forming a first ohmic contact region. Fourth ions of the second conductivity type are implanted into the substrate not surrounding the pattern of holes to form a second ohmic contact region. A nitride layer is deposited on a frontside and a backside of the silicon substrate. Contacts are formed through the nitride layer to the first and second ohmic contact regions. Thereafter, the backside nitride layer is patterned and from the backside, the silicon substrate not covered by the nitride layer is etched away to the etch stop layer and, simultaneously, the pattern of holes is selectively etched away to complete formation of a perforated diaphragm.

Abstract translation: 描述了制造高度穿孔的硅膜的方法。 提供了第一导电类型的单晶硅衬底。 与第一导电类型相反的第二导电类型的第一离子注入到单晶硅衬底中以形成蚀刻停止层。 第一导电类型的第二离子被选择性地注入到单晶硅衬底中以在衬底的一部分中形成孔的图案。 将第一导电类型的第三离子注入覆盖孔的图案并形成第一欧姆接触区域。 将第二导电类型的第四离子注入到不围绕孔图案的衬底中以形成第二欧姆接触区域。 氮化物层沉积在硅衬底的前侧和背面。 触头通过氮化物层形成到第一和第二欧姆接触区域。 此后，将背面氮化物层图案化，并且从背面，未被氮化物层覆盖的硅衬底被蚀刻掉到蚀刻停止层，并且同时，孔的图案被选择性地蚀刻掉以完成多孔隔膜的形成。