Abstract:
A system monitors and dynamically changes memory mapping in a runtime of a computing system. The computing system has various memory resources, and multiple possible mappings that indicate how data is to be stored in and subsequently accessed from the memory resources. The performance of each memory mapping may be different under different runtime or load conditions of the computing device. A memory controller can monitor runtime performance of the current memory mapping and dynamically change memory mappings at runtime based on monitored or observed performance of the memory mappings. The performance monitoring can be modified for any of a number of different granularities possible within the system, from the byte level to memory channel.
Abstract:
A system monitors and dynamically changes memory mapping in a runtime of a computing system. The computing system has various memory resources, and multiple possible mappings that indicate how data is to be stored in and subsequently accessed from the memory resources. The performance of each memory mapping may be different under different runtime or load conditions of the computing device. A memory controller can monitor runtime performance of the current memory mapping and dynamically change memory mappings at runtime based on monitored or observed performance of the memory mappings. The performance monitoring can be modified for any of a number of different granularities possible within the system, from the byte level to memory channel.
Abstract:
A system monitors and dynamically changes memory mapping in a runtime of a computing system. The computing system has various memory resources, and multiple possible mappings that indicate how data is to be stored in and subsequently accessed from the memory resources. The performance of each memory mapping may be different under different runtime or load conditions of the computing device. A memory controller can monitor runtime performance of the current memory mapping and dynamically change memory mappings at runtime based on monitored or observed performance of the memory mappings. The performance monitoring can be modified for any of a number of different granularities possible within the system, from the byte level to memory channel.
Abstract:
A system monitors and dynamically changes memory mapping in a runtime of a computing system. The computing system has various memory resources, and multiple possible mappings that indicate how data is to be stored in and subsequently accessed from the memory resources. The performance of each memory mapping may be different under different runtime or load conditions of the computing device. A memory controller can monitor runtime performance of the current memory mapping and dynamically change memory mappings at runtime based on monitored or observed performance of the memory mappings. The performance monitoring can be modified for any of a number of different granularities possible within the system, from the byte level to memory channel.
Abstract:
A refresh voltage control engine selectively applies different high voltages to use in refresh operations. The control engine can detect that a portion of a memory device needs to be refreshed, and determine that the refresh cycle time is too short for a state of the portion of the memory device. The memory device typically has an associated refresh cycle time or time between refreshes based on the device and system architecture. The control engine can generate one or more control signals to cause the system to apply an overcharge refresh to overcharge the portion of the memory device with a refresh operation to extend the refresh cycle time for the portion of the memory device.
Abstract:
A method, device, and system are disclosed. In one embodiment method includes determining a left edge and right edge of a valid data eye for a memory. The method continues by periodically checking the left and right edges for movement during operation of the memory. If movement is detected, the method retrains the valid data eye with an updated left edge and right edge.
Abstract:
In a semiconductor memory chips, a semiconductor memory system, and a method of masking write data, data, command, and address signal streams are serially transmitted in the form of signal frames in accordance with a predefined protocol. The semiconductor memory system and predefined protocol are adapted to transfer write data mask bits in a close relation to respectively associated write data units within one write data/command stream. An interface section between a reception interface and a memory core of the semiconductor memory chip includes a frame decoder and a intermediate data buffer.
Abstract:
A method for masking DQ bits that are input into a semiconductor memory by a memory controller is described. In this case, the bits to be masked are provided with an increased level and therefore cannot be read into the semiconductor memory due to the increased voltage level which functions as a deactivating voltage level.
Abstract:
Separate microchannel voltage domains in a stacked memory architecture An embodiment of a memory device includes a memory stack including one or more coupled memory dies, wherein a first memory die of the memory stack includes multiple microchannels, and a logic chip coupled with the memory stack, the logic chip including a memory controller. Each of the microchannels includes a separate voltage domain, and a voltage level is controlled for each of the plurality of microchannels.
Abstract:
A voltage regulator for one or more dies in a multi-stack integrated circuit includes an inductor located on a die, a voltage controller that is electrically coupled to the inductor and is also located on the die, and a capacitor that is electrically coupled to the inductor and the voltage controller and is also located on the die. The inductor defines an interior space and the voltage controller and the capacitor are located within the interior space of the inductor. The inductor can be a lateral inductor or a through layer via inductor. The multi-stack integrated circuit may have multiple dies. A voltage controller may be electrically coupled to each of the dies, although it may be located on only one of the dies. Alternatively, separate voltage controllers may be electrically coupled to each of the multiple dies and may be located on each of the respective dies.