公开(公告)号：US20220267899A1

公开(公告)日：2022-08-25

申请号：US17184802

申请日：2021-02-25

Applicant: Applied Materials, Inc.

Inventor： Marc Shull ,  Peter Reimer ,  Hong P. Gao ,  Chandra V. Deshpandey

IPC: C23C16/40 ,  H01L21/687 ,  C23C16/505

Abstract: Exemplary deposition methods may include introducing hydrogen into a processing chamber, a powder disposed within a processing region of the processing chamber. The method may include striking a first plasma in the processing region, the first plasma including energetic hydrogen species. The method may include exposing the powder to the energetic hydrogen species in the processing region. The method may include chemically reducing the powder through a reaction of the powder with the energetic hydrogen species. The method may include removing process effluents including unreacted hydrogen from the processing region. The method may also include forming a layer of material on grains of the powder within the processing region.

公开(公告)号：US20240376595A1

公开(公告)日：2024-11-14

申请号：US18781101

申请日：2024-07-23

Applicant: Applied Materials, Inc.

Inventor： Marc Shull ,  Peter Reimer ,  Hong P. Gao ,  Chandra V. Deshpandey

IPC: C23C16/44 ,  C04B35/581 ,  C04B35/626 ,  C04B35/628 ,  C23C16/02 ,  C23C16/40 ,  C23C16/442 ,  C23C16/455 ,  C23C16/505 ,  H01L21/687

Abstract: Exemplary deposition methods may include introducing hydrogen into a processing chamber, a powder disposed within a processing region of the processing chamber. The method may include striking a first plasma in the processing region, the first plasma including energetic hydrogen species. The method may include exposing the powder to the energetic hydrogen species in the processing region. The method may include chemically reducing the powder through a reaction of the powder with the energetic hydrogen species. The method may include removing process effluents including unreacted hydrogen from the processing region. The method may also include forming a layer of material on grains of the powder within the processing region.

公开(公告)号：US12084763B2

公开(公告)日：2024-09-10

申请号：US17184802

申请日：2021-02-25

Applicant: Applied Materials, Inc.

Inventor： Marc Shull ,  Peter Reimer ,  Hong P. Gao ,  Chandra V. Deshpandey

IPC: C04B35/626 ,  C04B35/581 ,  C04B35/628 ,  C23C16/02 ,  C23C16/40 ,  C23C16/44 ,  C23C16/442 ,  C23C16/455 ,  C23C16/505 ,  H01L21/687

CPC classification number: C23C16/4417 ,  C04B35/581 ,  C04B35/62685 ,  C04B35/62805 ,  C04B35/6281 ,  C04B35/62815 ,  C04B35/62884 ,  C04B35/62894 ,  C23C16/0227 ,  C23C16/0272 ,  C23C16/40 ,  C23C16/405 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/505 ,  H01L21/68757 ,  C04B2235/3225 ,  C23C16/442

Abstract: Exemplary deposition methods may include introducing hydrogen into a processing chamber, a powder disposed within a processing region of the processing chamber. The method may include striking a first plasma in the processing region, the first plasma including energetic hydrogen species. The method may include exposing the powder to the energetic hydrogen species in the processing region. The method may include chemically reducing the powder through a reaction of the powder with the energetic hydrogen species. The method may include removing process effluents including unreacted hydrogen from the processing region. The method may also include forming a layer of material on grains of the powder within the processing region.