公开(公告)号：US20230141012A1

公开(公告)日：2023-05-11

申请号：US17522635

申请日：2021-11-09

Applicant: Applied Materials, Inc.

Inventor： Kostiantyn Achkasov ,  Peter Reimer ,  Shawn Thanhson Le ,  Sohrab Zokaei

IPC: H01L21/67 ,  G05B19/418

CPC classification number: H01L21/67276 ,  G05B19/41875 ,  H01J37/32917

Abstract: Exemplary diagnostic wafers for a semiconductor processing chamber may include a wafer body defining a plurality of recesses. The diagnostic wafers may include at least one data logging puck positionable within one of the plurality of recesses. The diagnostic wafers may include at least one battery puck positionable within one of the plurality of recesses. The diagnostic wafers may include at least one sensor puck positionable within one of the plurality of recesses.

公开(公告)号：US20220267899A1

公开(公告)日：2022-08-25

申请号：US17184802

申请日：2021-02-25

Applicant: Applied Materials, Inc.

Inventor： Marc Shull ,  Peter Reimer ,  Hong P. Gao ,  Chandra V. Deshpandey

IPC: C23C16/40 ,  H01L21/687 ,  C23C16/505

Abstract: Exemplary deposition methods may include introducing hydrogen into a processing chamber, a powder disposed within a processing region of the processing chamber. The method may include striking a first plasma in the processing region, the first plasma including energetic hydrogen species. The method may include exposing the powder to the energetic hydrogen species in the processing region. The method may include chemically reducing the powder through a reaction of the powder with the energetic hydrogen species. The method may include removing process effluents including unreacted hydrogen from the processing region. The method may also include forming a layer of material on grains of the powder within the processing region.

公开(公告)号：US20240420933A1

公开(公告)日：2024-12-19

申请号：US18334038

申请日：2023-06-13

Applicant: Applied Materials, Inc.

Inventor： Amir H. Tavakoli ,  Jian Li ,  Peter Reimer

IPC: H01J37/32 ,  H01L21/683

Abstract: Substrate support assembly and methods of making such substrate support assemblies are provided. Substrate support assemblies include an electrostatic chuck body defining a substrate support surface, a support stem coupled with the electrostatic chuck body, and an electrode embedded within the electrostatic chuck body. Substrate support surfaces exhibit a resistivity of 1×108 Ω-cm to 1×1011 Ω-cm at a temperature of greater than 650° C. Substrate support surfaces can include a composite ceramic material having a base dielectric material and a second dielectric material having an electrical resistivity at least about two times higher than an electrical resistivity of the base dielectric material at a temperature of greater than 650° C.

公开(公告)号：US12191120B2

公开(公告)日：2025-01-07

申请号：US17691384

申请日：2022-03-10

Applicant: Applied Materials, Inc.

Inventor： Amir H. Tavakoli ,  Tony S. Kaushal ,  Peter Reimer ,  David Jorgensen

IPC: H01J37/00 ,  C04B35/10 ,  C04B35/12 ,  C04B35/14 ,  C04B35/622 ,  C23C16/40 ,  C23C16/455 ,  H01J37/32 ,  H01L21/67

Abstract: Exemplary methods of coating a metal-containing component are described. The methods are developed to increase corrosion resistance and improve coating adhesion to a metal substrate. The methods include forming a bonding layer on a metal substrate, where the bonding layer includes an oxide of a metal in the metal substrate. The coating methods further include depositing a stress buffer layer on the bonding layer, where the stress buffer layer is characterized by a stress buffer layer coefficient of thermal expansion (CTE) that is less than a metal substrate CTE and a bonding layer CTE. The coating methods also include depositing an environmental barrier layer on the stress buffer layer, where a ratio of the metal substrate CTE to an environmental barrier layer CTE is greater than or about 20:1, and where the environmental barrier layer includes silicon oxide. The metal-containing components may be used in fabrication equipment for electronic devices.

公开(公告)号：US12091749B2

公开(公告)日：2024-09-17

申请号：US17317565

申请日：2021-05-11

Applicant: Applied Materials, Inc.

Inventor： Tetsuya Ishikawa ,  Swaminathan T. Srinivasan ,  Matthias Bauer ,  Manjunath Subbanna ,  Ala Moradian ,  Kartik Bhupendra Shah ,  Errol Antonio C Sanchez ,  Michael R. Rice ,  Peter Reimer ,  Marc Shull

IPC: C30B25/14 ,  C23C16/44 ,  C23C16/458 ,  C23C16/46 ,  C23C16/52 ,  C30B25/10 ,  C30B25/12 ,  C30B25/16

CPC classification number: C23C16/4408 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/52 ,  C30B25/10 ,  C30B25/12 ,  C30B25/16

Abstract: Embodiments described herein include processes and apparatuses relate to epitaxial deposition. A method for epitaxially depositing a material is provided and includes positioning a substrate on a substrate support surface of a susceptor within a process volume of a chamber body, where the process volume contains upper and lower chamber regions. The method includes flowing a process gas containing one or more chemical precursors from an upper gas inlet on a first side of the chamber body, across the substrate, and to an upper gas outlet on a second side of the chamber body, flowing a purge gas from a lower gas inlet on the first side of the chamber body, across the lower surface of the susceptor, and to a lower gas outlet on the second side of the chamber body, and maintaining a pressure of the lower chamber region greater than a pressure of the upper chamber region.

公开(公告)号：US20240209544A1

公开(公告)日：2024-06-27

申请号：US18602099

申请日：2024-03-12

Applicant: Applied Materials, Inc.

Inventor： Tetsuya ISHIKAWA ,  Swaminathan T. Srinivasan ,  Katik Bhupendra Shah ,  Ala Moradian ,  Manjunath Subbanna ,  Matthias Bauer ,  Peter Reimer ,  Michael R. Rice

IPC: C30B25/14 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/48 ,  C30B25/08 ,  C30B25/10 ,  C30B25/12 ,  H01L21/67 ,  H01L21/677

CPC classification number: C30B25/14 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/45504 ,  C23C16/4558 ,  C23C16/46 ,  C30B25/08 ,  C30B25/10 ,  C30B25/12 ,  H01L21/67115 ,  H01L21/67742 ,  C23C16/4411 ,  C23C16/4584 ,  C23C16/482 ,  H01L21/67748

Abstract: The present disclosure generally relates to a process chamber for processing of semiconductor substrates. The process chamber includes an upper lamp assembly, a lower lamp assembly, a susceptor, an upper window disposed between the substrate support and the upper lamp assembly, a lower window disposed between the lower lamp assembly and the substrate support, an inject ring, and a base ring. The susceptor includes a movement assembly. The movement assembly includes a bearing feedthrough assembly. The bearing feedthrough assembly is a ferrofluidic feedthrough assembly and functions as a ferrofluidic bearing. The bearing feedthrough assembly includes a shaft coupled to the support shaft. The shaft is rotated within the bearing feedthrough assembly. The bearing feedthrough assembly is combined with a first linear spline and a second linear spline.

公开(公告)号：US12060651B2

公开(公告)日：2024-08-13

申请号：US17317363

申请日：2021-05-11

Applicant: Applied Materials, Inc.

Inventor： Tetsuya Ishikawa ,  Swaminathan T. Srinivasan ,  Kartik Bhupendra Shah ,  Ala Moradian ,  Manjunath Subbanna ,  Matthias Bauer ,  Peter Reimer ,  Michael R. Rice

IPC: C30B25/14 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/48 ,  C30B25/08 ,  C30B25/10 ,  C30B25/12 ,  H01L21/67 ,  H01L21/677

CPC classification number: C30B25/14 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/45504 ,  C23C16/4558 ,  C23C16/46 ,  C30B25/08 ,  C30B25/10 ,  C30B25/12 ,  H01L21/67115 ,  H01L21/67742 ,  C23C16/4411 ,  C23C16/4584 ,  C23C16/482 ,  H01L21/67748

Abstract: The present disclosure generally relates to a process chamber for processing of semiconductor substrates. The process chamber includes an upper lamp assembly, a lower lamp assembly, a substrate support, an upper window disposed between the substrate support and the upper lamp assembly, a lower window disposed between the lower lamp assembly and the substrate support, an inject ring, and a base ring. Each of the upper lamp assembly and the lower lamp assembly include vertically oriented lamp apertures for the placement of heating lamps therein. The inject ring includes gas injectors disposed therethrough and the base ring includes a substrate transfer passage, a lower chamber exhaust passage, and one or more upper chamber exhaust passages. The gas injectors are disposed over the substrate transfer passage and across from the lower chamber exhaust passage and the one or more upper chamber exhaust passages.

公开(公告)号：US20240035575A1

公开(公告)日：2024-02-01

申请号：US17876035

申请日：2022-07-28

Applicant: APPLIED MATERIALS, INC.

Inventor： Shawn Thanhson Le ,  Peter Reimer ,  Ofer Amir ,  Hannie Thi Vo

IPC: F16K3/02 ,  F16K3/314

CPC classification number: F16K3/0227 ,  F16K3/314 ,  H01J37/32458

Abstract: Disclosed is a slit valve gate. The slit valve gate includes a base portion configured to couple to a slit valve actuator. The slit valve gate further includes a seal portion coupled to the base portion. The seal portion is configured to create an airtight seal between the slit valve gate and a sealing surface of a slit valve opening. The slit valve gate further includes a clamp portion coupled to the base portion. The clamp portion retains the seal portion at least partially between the clamp portion and the base portion.

公开(公告)号：US11867307B1

公开(公告)日：2024-01-09

申请号：US17876035

申请日：2022-07-28

Applicant: APPLIED MATERIALS, INC.

Inventor： Shawn Thanhson Le ,  Peter Reimer ,  Ofer Amir ,  Hannie Thi Vo

IPC: F16K1/46 ,  F16K3/02 ,  F16K3/314 ,  F16K25/00 ,  H01J37/32

CPC classification number: F16K3/0227 ,  F16K1/46 ,  F16K3/314 ,  F16K25/00 ,  H01J37/32458

Abstract: Disclosed is a slit valve gate. The slit valve gate includes a base portion configured to couple to a slit valve actuator. The slit valve gate further includes a seal portion coupled to the base portion. The seal portion is configured to create an airtight seal between the slit valve gate and a sealing surface of a slit valve opening. The slit valve gate further includes a clamp portion coupled to the base portion. The clamp portion retains the seal portion at least partially between the clamp portion and the base portion.

公开(公告)号：US20230290615A1

公开(公告)日：2023-09-14

申请号：US17691384

申请日：2022-03-10

Applicant: Applied Materials, Inc.

Inventor： Amir H. Tavakoli ,  Tony S. Kaushal ,  Peter Reimer ,  David Jorgensen

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/40 ,  C04B35/622 ,  C04B35/12 ,  C04B35/10 ,  C04B35/14

CPC classification number: H01J37/32495 ,  C23C16/45525 ,  C23C16/403 ,  C23C16/402 ,  C23C16/405 ,  C04B35/62222 ,  C04B35/12 ,  C04B35/10 ,  C04B35/14 ,  H01L21/67069

Abstract: Exemplary methods of coating a metal-containing component are described. The methods are developed to increase corrosion resistance and improve coating adhesion to a metal substrate. The methods include forming a bonding layer on a metal substrate, where the bonding layer includes an oxide of a metal in the metal substrate. The coating methods further include depositing a stress buffer layer on the bonding layer, where the stress buffer layer is characterized by a stress buffer layer coefficient of thermal expansion (CTE) that is less than a metal substrate CTE and a bonding layer CTE. The coating methods also include depositing an environmental barrier layer on the stress buffer layer, where a ratio of the metal substrate CTE to an environmental barrier layer CTE is greater than or about 20:1, and where the environmental barrier layer includes silicon oxide. The metal-containing components may be used in fabrication equipment for electronic devices.