公开(公告)号：US20220267899A1

公开(公告)日：2022-08-25

申请号：US17184802

申请日：2021-02-25

Applicant: Applied Materials, Inc.

Inventor： Marc Shull ,  Peter Reimer ,  Hong P. Gao ,  Chandra V. Deshpandey

IPC: C23C16/40 ,  H01L21/687 ,  C23C16/505

Abstract: Exemplary deposition methods may include introducing hydrogen into a processing chamber, a powder disposed within a processing region of the processing chamber. The method may include striking a first plasma in the processing region, the first plasma including energetic hydrogen species. The method may include exposing the powder to the energetic hydrogen species in the processing region. The method may include chemically reducing the powder through a reaction of the powder with the energetic hydrogen species. The method may include removing process effluents including unreacted hydrogen from the processing region. The method may also include forming a layer of material on grains of the powder within the processing region.

公开(公告)号：US12091749B2

公开(公告)日：2024-09-17

申请号：US17317565

申请日：2021-05-11

Applicant: Applied Materials, Inc.

Inventor： Tetsuya Ishikawa ,  Swaminathan T. Srinivasan ,  Matthias Bauer ,  Manjunath Subbanna ,  Ala Moradian ,  Kartik Bhupendra Shah ,  Errol Antonio C Sanchez ,  Michael R. Rice ,  Peter Reimer ,  Marc Shull

IPC: C30B25/14 ,  C23C16/44 ,  C23C16/458 ,  C23C16/46 ,  C23C16/52 ,  C30B25/10 ,  C30B25/12 ,  C30B25/16

CPC classification number: C23C16/4408 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/52 ,  C30B25/10 ,  C30B25/12 ,  C30B25/16

Abstract: Embodiments described herein include processes and apparatuses relate to epitaxial deposition. A method for epitaxially depositing a material is provided and includes positioning a substrate on a substrate support surface of a susceptor within a process volume of a chamber body, where the process volume contains upper and lower chamber regions. The method includes flowing a process gas containing one or more chemical precursors from an upper gas inlet on a first side of the chamber body, across the substrate, and to an upper gas outlet on a second side of the chamber body, flowing a purge gas from a lower gas inlet on the first side of the chamber body, across the lower surface of the susceptor, and to a lower gas outlet on the second side of the chamber body, and maintaining a pressure of the lower chamber region greater than a pressure of the upper chamber region.

公开(公告)号：US20240247379A1

公开(公告)日：2024-07-25

申请号：US18099846

申请日：2023-01-20

Applicant: Applied Materials, Inc.

Inventor： Chao Liu ,  David John Jorgensen ,  Marc Shull ,  Christopher Laurent Beaudry ,  Joseph Frederick Behnke

IPC: C23C28/00

CPC classification number: C23C28/323 ,  C23C28/34

Abstract: Embodiments of the disclosure relate to articles, coated chamber components, and techniques of coating chamber components and systems. In particular, disclosed is a chamber component and methods of forming the chamber component that includes a substrate and a first layer disposed on the substrate, the first layer including a metal with a first atomic concentration. The chamber component further includes a second layer disposed on the first layer, the second layer including the metal with a second atomic concentration that is at least 5 percent higher than the first atomic concentration.

公开(公告)号：US11111582B2

公开(公告)日：2021-09-07

申请号：US16808046

申请日：2020-03-03

Applicant: Applied Materials, Inc.

Inventor： Sumit Agarwal ,  Chad Peterson ,  Marc Shull

IPC: C23C16/40 ,  C23C16/455

Abstract: A showerhead assembly includes a support structure and a porous plate. The support structure includes a support feature. The porous plate has a thermal conductivity of at least about 50 W/(mK) and includes a plurality of pores having an average diameter of less than about 100 um, wherein at least a portion of a perimeter of the porous plate rests on the support feature. The showerhead may be included within a processing chamber that is utilized to process a substrate.

公开(公告)号：US20240376595A1

公开(公告)日：2024-11-14

申请号：US18781101

申请日：2024-07-23

Applicant: Applied Materials, Inc.

Inventor： Marc Shull ,  Peter Reimer ,  Hong P. Gao ,  Chandra V. Deshpandey

IPC: C23C16/44 ,  C04B35/581 ,  C04B35/626 ,  C04B35/628 ,  C23C16/02 ,  C23C16/40 ,  C23C16/442 ,  C23C16/455 ,  C23C16/505 ,  H01L21/687

Abstract: Exemplary deposition methods may include introducing hydrogen into a processing chamber, a powder disposed within a processing region of the processing chamber. The method may include striking a first plasma in the processing region, the first plasma including energetic hydrogen species. The method may include exposing the powder to the energetic hydrogen species in the processing region. The method may include chemically reducing the powder through a reaction of the powder with the energetic hydrogen species. The method may include removing process effluents including unreacted hydrogen from the processing region. The method may also include forming a layer of material on grains of the powder within the processing region.

公开(公告)号：US12084763B2

公开(公告)日：2024-09-10

申请号：US17184802

申请日：2021-02-25

Applicant: Applied Materials, Inc.

Inventor： Marc Shull ,  Peter Reimer ,  Hong P. Gao ,  Chandra V. Deshpandey

IPC: C04B35/626 ,  C04B35/581 ,  C04B35/628 ,  C23C16/02 ,  C23C16/40 ,  C23C16/44 ,  C23C16/442 ,  C23C16/455 ,  C23C16/505 ,  H01L21/687

CPC classification number: C23C16/4417 ,  C04B35/581 ,  C04B35/62685 ,  C04B35/62805 ,  C04B35/6281 ,  C04B35/62815 ,  C04B35/62884 ,  C04B35/62894 ,  C23C16/0227 ,  C23C16/0272 ,  C23C16/40 ,  C23C16/405 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/505 ,  H01L21/68757 ,  C04B2235/3225 ,  C23C16/442

Abstract: Exemplary deposition methods may include introducing hydrogen into a processing chamber, a powder disposed within a processing region of the processing chamber. The method may include striking a first plasma in the processing region, the first plasma including energetic hydrogen species. The method may include exposing the powder to the energetic hydrogen species in the processing region. The method may include chemically reducing the powder through a reaction of the powder with the energetic hydrogen species. The method may include removing process effluents including unreacted hydrogen from the processing region. The method may also include forming a layer of material on grains of the powder within the processing region.