公开(公告)号：US09343870B2

公开(公告)日：2016-05-17

申请号：US14501751

申请日：2014-09-30

Applicant: Applied Optoelectronics, Inc.

Inventor： Jun Zheng ,  Klaus Alexander Anselm ,  Huanlin Zhang ,  Hung-Lun Chang

IPC: H01S5/00 ,  H01S5/024 ,  H01S5/026 ,  H01S5/042 ,  H01S5/20 ,  H01S5/10 ,  H01S5/12 ,  H01S5/40 ,  G02B6/12 ,  H04B10/50

CPC classification number: H01S5/02453 ,  G02B6/12 ,  G02B6/12014 ,  G02B2006/12164 ,  H01S5/02415 ,  H01S5/02438 ,  H01S5/02461 ,  H01S5/0261 ,  H01S5/0268 ,  H01S5/0287 ,  H01S5/0612 ,  H01S5/22 ,  H01S5/4087 ,  H01S2301/176 ,  H04B10/40 ,  H04J14/0282

Abstract: A semiconductor laser diode with integrated heating generally includes a lasing region and a heating region integrated into the same semiconductor structure or chip. The lasing region and the heating region include first and second portions, respectively, of the semiconductor layers forming the semiconductor structure and include first and second portions, respectively, of the active regions formed by the semiconductor layers. Separate laser and heater electrodes are electrically connected to the respective lasing and heating regions for driving the respective lasing and heating regions with drive currents. The heating region may thus be driven independently from the lasing region, and heat may be conducted through the semiconductor layers from the heating region to the lasing region allowing the temperature to be controlled more efficiently.

Abstract translation: 具有集成加热的半导体激光二极管通常包括激光区域和集成在同一半导体结构或芯片中的加热区域。 激光区域和加热区域分别包括形成半导体结构的半导体层的第一和第二部分，并且分别包括由半导体层形成的有源区的第一和第二部分。 单独的激光和加热器电极电连接到相应的激光和加热区域，以用驱动电流驱动相应的激光和加热区域。 因此，加热区域可以独立于激光区域被驱动，并且热可以通过半导体层从加热区域传导到激光区域，从而能够更有效地控制温度。

公开(公告)号：US20150245114A1

公开(公告)日：2015-08-27

申请号：US14188768

申请日：2014-02-25

Applicant: Applied Optoelectronics, Inc.

Inventor： I-Lung Ho ,  Jun Zheng ,  Hung-Lun Chang

IPC: H04Q11/00 ,  H04B10/079 ,  H04B10/50 ,  H04J14/02

CPC classification number: H04B10/503 ,  H04B10/079 ,  H04B10/40 ,  H04B10/572 ,  H04J14/0256 ,  H04J14/0282 ,  Y10T29/49002

Abstract: A bidirectional optical subassembly (BOSA) optical networking unit (ONU) generally includes a BOSA housing. A tunable laser is located in the BOSA housing and is configured to generate a first optical signal for transmission at a first selected wavelength based on temperature control. The tunable laser is a distributed feedback (DFB) laser diode. A thermal management device is also located in the BOSA housing and is configured to provide the temperature control. A photo diode is further located in the BOSA housing and is configured to receive a second optical signal at a second selected wavelength. The BOSA housing comprises an alloy of stainless steel or an alloy of Kovar.

Abstract translation: 双向光学子组件（BOSA）光网络单元（ONU）通常包括BOSA外壳。 可调激光器位于BOSA壳体中，并且被配置为基于温度控制产生用于以第一选定波长传输的第一光信号。 可调激光器是分布式反馈（DFB）激光二极管。 BASA外壳中还设有热管理装置，并配置为提供温度控制。 光电二极管还位于BOSA壳体中，并且被配置为在第二选定波长处接收第二光信号。 BOSA外壳包括不锈钢或Kovar合金的合金。

公开(公告)号：US09685757B2

公开(公告)日：2017-06-20

申请号：US14588608

申请日：2015-01-02

Applicant: Applied Optoelectronics, Inc.

Inventor： Guipeng Luo ,  Klaus Alexander Anselm ,  Hung-Lun Chang

IPC: G01J1/42 ,  H01S5/00 ,  G01J1/04

CPC classification number: H01S5/0014 ,  G01J1/0411 ,  G01J1/0451 ,  G01J1/4257

Abstract: A dual testing system and method is used to perform both optical power and wavelength measurements on laser light emitted from a laser diode, such as a chip-on-submount (COS) laser diode or a laser diode in a bar laser. A testing fixture may be used to facilitate both measurements by simultaneously detecting the light for performing a first test including the optical power measurement(s) and reflecting the light for performing a second test including the wavelength measurement(s). The testing fixture may include an angled photodetector and an optical coupling system such as a collimating lens, a focal lens and an optical waveguide. The testing fixture may be electrically connected to an optical power testing module, such as a light-current-voltage (LIV) testing module, for performing the optical power measurement(s) and may be optically coupled to a wavelength measurement module, such as an optical spectrum analyzer (OSA) for performing the wavelength measurement(s).

公开(公告)号：US09432122B2

公开(公告)日：2016-08-30

申请号：US14188768

申请日：2014-02-25

Applicant: Applied Optoelectronics, Inc.

Inventor： I-Lung Ho ,  Jun Zheng ,  Hung-Lun Chang

IPC: H04B10/08 ,  H04B10/50 ,  H04B10/079 ,  H04J14/02

CPC classification number: H04B10/503 ,  H04B10/079 ,  H04B10/40 ,  H04B10/572 ,  H04J14/0256 ,  H04J14/0282 ,  Y10T29/49002

Abstract: A bidirectional optical subassembly (BOSA) optical networking unit (ONU) generally includes a BOSA housing. A tunable laser is located in the BOSA housing and is configured to generate a first optical signal for transmission at a first selected wavelength based on temperature control. The tunable laser is a distributed feedback (DFB) laser diode. A thermal management device is also located in the BOSA housing and is configured to provide the temperature control. A photo diode is further located in the BOSA housing and is configured to receive a second optical signal at a second selected wavelength. The BOSA housing comprises an alloy of stainless steel or an alloy of Kovar.

Abstract translation: 双向光学子组件（BOSA）光网络单元（ONU）通常包括BOSA外壳。 可调激光器位于BOSA壳体中，并且被配置为基于温度控制产生用于以第一选定波长传输的第一光信号。 可调激光器是分布式反馈（DFB）激光二极管。 BASA外壳中还设有热管理装置，并配置为提供温度控制。 光电二极管还位于BOSA壳体中，并且被配置为在第二选定波长处接收第二光信号。 BOSA外壳包括不锈钢或Kovar合金的合金。

公开(公告)号：US20160197453A1

公开(公告)日：2016-07-07

申请号：US14588608

申请日：2015-01-02

Applicant: Applied Optoelectronics, Inc.

Inventor： Guipeng Luo ,  Klaus Alexander Anselm ,  Hung-Lun Chang

IPC: H01S5/00 ,  G01M11/00

CPC classification number: H01S5/0014 ,  G01J1/0411 ,  G01J1/0451 ,  G01J1/4257

Abstract: A dual testing system and method is used to perform both optical power and wavelength measurements on laser light emitted from a laser diode, such as a chip-on-submount (COS) laser diode or a laser diode in a bar laser. A testing fixture may be used to facilitate both measurements by simultaneously detecting the light for performing a first test including the optical power measurement(s) and reflecting the light for performing a second test including the wavelength measurement(s). The testing fixture may include an angled photodetector and an optical coupling system such as a collimating lens, a focal lens and an optical waveguide. The testing fixture may be electrically connected to an optical power testing module, such as a light-current-voltage (LIV) testing module, for performing the optical power measurement(s) and may be optically coupled to a wavelength measurement module, such as an optical spectrum analyzer (OSA) for performing the wavelength measurement(s).

Abstract translation: 双重测试系统和方法用于对激光二极管发射的激光进行光功率和波长测量，如激光二极管芯片（COS）激光二极管或激光二极管。 可以使用测试夹具来同时检测用于执行包括光功率测量的第一测试的光并反射用于进行包括波长测量的第二测试的光的测量。 测试夹具可以包括成角度的光电检测器和诸如准直透镜，聚焦透镜和光波导之类的光耦合系统。 测试夹具可以电连接到诸如光电压（LIV）测试模块的光功率测试模块，用于执行光功率测量，并且可以光学耦合到波长测量模块，例如 用于执行波长测量的光谱分析仪（OSA）。

公开(公告)号：US20160094013A1

公开(公告)日：2016-03-31

申请号：US14501751

申请日：2014-09-30

Applicant: Applied Optoelectronics, Inc.

Inventor： Jun Zheng ,  Klaus Alexander Anselm ,  Huanlin Zhang ,  Hung-Lun Chang

IPC: H01S5/024 ,  H01S5/042 ,  H01S5/20 ,  H04B10/50 ,  H01S5/12 ,  H01S5/40 ,  G02B6/12 ,  H01S5/026 ,  H01S5/10

CPC classification number: H01S5/02453 ,  G02B6/12 ,  G02B6/12014 ,  G02B2006/12164 ,  H01S5/02415 ,  H01S5/02438 ,  H01S5/02461 ,  H01S5/0261 ,  H01S5/0268 ,  H01S5/0287 ,  H01S5/0612 ,  H01S5/22 ,  H01S5/4087 ,  H01S2301/176 ,  H04B10/40 ,  H04J14/0282

Abstract: A semiconductor laser diode with integrated heating generally includes a lasing region and a heating region integrated into the same semiconductor structure or chip. The lasing region and the heating region include first and second portions, respectively, of the semiconductor layers forming the semiconductor structure and include first and second portions, respectively, of the active regions formed by the semiconductor layers. Separate laser and heater electrodes are electrically connected to the respective lasing and heating regions for driving the respective lasing and heating regions with drive currents. The heating region may thus be driven independently from the lasing region, and heat may be conducted through the semiconductor layers from the heating region to the lasing region allowing the temperature to be controlled more efficiently.

Abstract translation: 具有集成加热的半导体激光二极管通常包括激光区域和集成在同一半导体结构或芯片中的加热区域。 激光区域和加热区域分别包括形成半导体结构的半导体层的第一和第二部分，并且分别包括由半导体层形成的有源区的第一和第二部分。 单独的激光和加热器电极电连接到相应的激光和加热区域，以用驱动电流驱动相应的激光和加热区域。 因此，加热区域可以独立于激光区域被驱动，并且热可以通过半导体层从加热区域传导到激光区域，从而能够更有效地控制温度。