公开(公告)号：US20160197678A1

公开(公告)日：2016-07-07

申请号：US14590456

申请日：2015-01-06

Applicant: Applied Optoelectronics, Inc.

Inventor： Jun Zheng ,  Stefan Murry ,  Klaus Alexander Anselm ,  Huanlin Zhang ,  Dion McIntosh-Dorsey

IPC: H04B10/50 ,  H01S5/062

CPC classification number: H01S5/06256 ,  H01S5/02415 ,  H01S5/06226

Abstract: A two-section semiconductor laser includes a gain section and a modulation-independent grating section to reduce chirp. The modulation-independent grating section includes a diffraction grating for reflecting light and forms a laser cavity with the gain section for lasing at a wavelength or range of wavelengths reflected by the diffraction grating. The gain section of the semiconductor laser includes a gain electrode for driving the gain section with at least a modulated RF signal and the grating section includes a grating electrode for driving the grating section with a DC bias current independent of the modulation of the gain section. The semiconductor laser may thus be directly modulated with the modulated RF signal without the modulation significantly affecting the index of refraction in the diffraction grating, thereby reducing chirp.

Abstract translation: 两部分半导体激光器包括增益部分和调制无关光栅部分，以减少啁啾。 调制非依赖光栅部分包括用于反射光的衍射光栅，并且在激光的增益部分处形成激光腔，该增益部分在由衍射光栅反射的波长或波长范围内进行激光。 半导体激光器的增益部分包括用于以至少调制的RF信号驱动增益部分的增益电极，并且光栅部分包括用于以独立于增益部分的调制的DC偏置电流来驱动光栅部分的光栅电极。 因此，半导体激光器可以用调制的RF信号直接调制，而不会使调制显着影响衍射光栅中的折射率，从而减少啁啾。

公开(公告)号：US09356422B2

公开(公告)日：2016-05-31

申请号：US14190765

申请日：2014-02-26

Applicant: Applied Optoelectronics, Inc.

Inventor： Klaus Alexander Anselm ,  Rajesh Bikky ,  Stephen Hu ,  Greg Pickrell ,  Nahid Sultana ,  Jae Yoon Um ,  Chia Chen David Wong

IPC: H01L21/78 ,  H01S5/00

CPC classification number: H01S5/00 ,  H01S5/0202 ,  H01S5/0203

Abstract: An improved scribe etch process for semiconductor laser chip manufacturing is provided. A method to etch a scribe line on a semiconductor wafer generally includes: applying a mask layer to a surface of the wafer; photolithographically opening a window in the mask layer along the scribe line; etching a trench in the wafer using a chemical etchant that operates on the wafer through the window opening, wherein the chemical etchant selectively etches through crystal planes of the wafer to generate a V-groove profile associated with the trench; and cleaving the wafer along the etched trench associated with the scribe line through application of a force to one or more regions of the wafer.

Abstract translation: 提供了一种用于半导体激光器芯片制造的改进的刻划蚀刻工艺。 蚀刻半导体晶片上的划线的方法通常包括：将掩模层施加到晶片的表面; 沿着划线光刻地在掩模层中打开窗口; 使用通过窗口在晶片上操作的化学蚀刻剂来蚀刻晶片中的沟槽，其中化学蚀刻剂选择性蚀刻晶片的晶面以产生与沟槽相关联的V形槽轮廓; 以及通过向所述晶片的一个或多个区域施加力而沿着与所述划线相关联的所述蚀刻沟槽切割所述晶片。

公开(公告)号：US20150357791A1

公开(公告)日：2015-12-10

申请号：US13916652

申请日：2013-06-13

Applicant: Applied Optoelectronics, Inc.

Inventor： Jun Zheng ,  Klaus Alexander Anselm ,  Yi Wang ,  I-Lung Ho ,  Huanlin Zhang ,  Dion McIntosh-Dorsey

IPC: H01S5/06 ,  H01S5/062 ,  H04B10/572 ,  H01S5/028 ,  H04J14/02 ,  H01S5/40 ,  H01S5/00

CPC classification number: H01S5/0612 ,  H01S5/005 ,  H01S5/0287 ,  H01S5/06246 ,  H01S5/06258 ,  H01S5/1215 ,  H01S5/1246 ,  H01S5/4031 ,  H01S5/4087 ,  H04B10/572 ,  H04J14/02 ,  H04J14/0245

Abstract: A tunable laser with multiple in-line sections generally includes a semiconductor laser body with a plurality of in-line laser sections each configured to be driven independently to generate laser light at a wavelength within a different respective wavelength range. The wavelength of the light generated in each of the laser sections may be tuned, in response to a temperature change, to a channel wavelength within the respective wavelength range. The laser light generated in each selected one of the laser sections is emitted from a front facet of the laser body. By selectively generating light in one or more of the laser sections, one or more channel wavelengths may be selected for lasing and transmission. The tunable laser with multiple in-line sections may be used, for example, in a tunable transmitter in an optical networking unit (ONU) in a WDM passive optical network (PON) to select a transmission channel wavelength.

Abstract translation: 具有多个在线部分的可调激光器通常包括具有多个在线激光部分的半导体激光器体，每个激光器部分被配置为独立地被驱动以产生在不同的相应波长范围内的波长的激光。 在每个激光部分中产生的光的波长可以响应于温度变化被调谐到相应波长范围内的通道波长。 在每个选择的一个激光部分中产生的激光从激光体的前刻面发射。 通过选择性地在一个或多个激光部分中产生光，可以选择一个或多个信道波长用于激光和透射。 具有多个在线部分的可调激光器可以用于例如WDM无源光网络（PON）中的光网络单元（ONU）中的可调谐发射机中，以选择传输信道波长。

公开(公告)号：US10020636B2

公开(公告)日：2018-07-10

申请号：US14551353

申请日：2014-11-24

Applicant: Applied Optoelectronics, Inc.

Inventor： Jun Zheng ,  Klaus Alexander Anselm ,  Huanlin Zhang ,  Dion McIntosh-Dorsey

IPC: H04B10/50 ,  H01S5/06 ,  H04B10/27 ,  H04J14/02 ,  H01S5/12 ,  H01S5/0625 ,  H01S5/024 ,  H01S5/10 ,  H01S5/40

CPC classification number: H01S5/1209 ,  H01S5/02415 ,  H01S5/0612 ,  H01S5/06258 ,  H01S5/1092 ,  H01S5/4087

Abstract: A tunable laser with multiple in-line sections including sampled gratings generally includes a semiconductor laser body with a plurality of in-line laser sections configured to be driven independently to generate laser light at a wavelength within a different respective wavelength range. Sampled gratings in the respective in-line sections have the same grating period and a different sampling period to produce the different wavelengths. The wavelength of the light generated in the respective laser sections may be tuned, in response to a temperature change, to a channel wavelength within the respective wavelength range. By selectively generating light in one or more of the laser sections, one or more channel wavelengths may be selected for lasing and transmission. By using sampled gratings with the same grating period in the multiple in-line sections, the multiple section tunable laser may be fabricated more easily.

公开(公告)号：US09762028B2

公开(公告)日：2017-09-12

申请号：US14590456

申请日：2015-01-06

Applicant: Applied Optoelectronics, Inc.

Inventor： Jun Zheng ,  Stefan Murry ,  Klaus Alexander Anselm ,  Huanlin Zhang ,  Dion McIntosh-Dorsey

IPC: H01S5/0625 ,  H01S5/062 ,  H01S5/024

CPC classification number: H01S5/06256 ,  H01S5/02415 ,  H01S5/06226

Abstract: A two-section semiconductor laser includes a gain section and a modulation-independent grating section to reduce chirp. The modulation-independent grating section includes a diffraction grating for reflecting light and forms a laser cavity with the gain section for lasing at a wavelength or range of wavelengths reflected by the diffraction grating. The gain section of the semiconductor laser includes a gain electrode for driving the gain section with at least a modulated RF signal and the grating section includes a grating electrode for driving the grating section with a DC bias current independent of the modulation of the gain section. The semiconductor laser may thus be directly modulated with the modulated RF signal without the modulation significantly affecting the index of refraction in the diffraction grating, thereby reducing chirp.

公开(公告)号：US09343870B2

公开(公告)日：2016-05-17

申请号：US14501751

申请日：2014-09-30

Applicant: Applied Optoelectronics, Inc.

Inventor： Jun Zheng ,  Klaus Alexander Anselm ,  Huanlin Zhang ,  Hung-Lun Chang

IPC: H01S5/00 ,  H01S5/024 ,  H01S5/026 ,  H01S5/042 ,  H01S5/20 ,  H01S5/10 ,  H01S5/12 ,  H01S5/40 ,  G02B6/12 ,  H04B10/50

CPC classification number: H01S5/02453 ,  G02B6/12 ,  G02B6/12014 ,  G02B2006/12164 ,  H01S5/02415 ,  H01S5/02438 ,  H01S5/02461 ,  H01S5/0261 ,  H01S5/0268 ,  H01S5/0287 ,  H01S5/0612 ,  H01S5/22 ,  H01S5/4087 ,  H01S2301/176 ,  H04B10/40 ,  H04J14/0282

Abstract: A semiconductor laser diode with integrated heating generally includes a lasing region and a heating region integrated into the same semiconductor structure or chip. The lasing region and the heating region include first and second portions, respectively, of the semiconductor layers forming the semiconductor structure and include first and second portions, respectively, of the active regions formed by the semiconductor layers. Separate laser and heater electrodes are electrically connected to the respective lasing and heating regions for driving the respective lasing and heating regions with drive currents. The heating region may thus be driven independently from the lasing region, and heat may be conducted through the semiconductor layers from the heating region to the lasing region allowing the temperature to be controlled more efficiently.

Abstract translation: 具有集成加热的半导体激光二极管通常包括激光区域和集成在同一半导体结构或芯片中的加热区域。 激光区域和加热区域分别包括形成半导体结构的半导体层的第一和第二部分，并且分别包括由半导体层形成的有源区的第一和第二部分。 单独的激光和加热器电极电连接到相应的激光和加热区域，以用驱动电流驱动相应的激光和加热区域。 因此，加热区域可以独立于激光区域被驱动，并且热可以通过半导体层从加热区域传导到激光区域，从而能够更有效地控制温度。

公开(公告)号：US20150243558A1

公开(公告)日：2015-08-27

申请号：US14190765

申请日：2014-02-26

Applicant: Applied Optoelectronics, Inc.

Inventor： Klaus Alexander Anselm ,  Rajesh Bikky ,  Stephen Hu ,  Greg Pickrell ,  Nahid Sultana ,  Jae Yoon Um ,  Chia Chen David Wong

IPC: H01L21/78 ,  H01L21/308

CPC classification number: H01S5/00 ,  H01S5/0202 ,  H01S5/0203

Abstract: An improved scribe etch process for semiconductor laser chip manufacturing is provided. A method to etch a scribe line on a semiconductor wafer generally includes: applying a mask layer to a surface of the wafer; photolithographically opening a window in the mask layer along the scribe line; etching a trench in the wafer using a chemical etchant that operates on the wafer through the window opening, wherein the chemical etchant selectively etches through crystal planes of the wafer to generate a V-groove profile associated with the trench; and cleaving the wafer along the etched trench associated with the scribe line through application of a force to one or more regions of the wafer.

Abstract translation: 提供了一种用于半导体激光器芯片制造的改进的刻划蚀刻工艺。 蚀刻半导体晶片上的划线的方法通常包括：将掩模层施加到晶片的表面; 沿着划线光刻地在掩模层中打开窗口; 使用通过窗口在晶片上操作的化学蚀刻剂来蚀刻晶片中的沟槽，其中化学蚀刻剂选择性蚀刻晶片的晶面以产生与沟槽相关联的V形槽轮廓; 以及通过向所述晶片的一个或多个区域施加力而沿着与所述划线相关联的所述蚀刻沟槽切割所述晶片。

公开(公告)号：US09685757B2

公开(公告)日：2017-06-20

申请号：US14588608

申请日：2015-01-02

Applicant: Applied Optoelectronics, Inc.

Inventor： Guipeng Luo ,  Klaus Alexander Anselm ,  Hung-Lun Chang

IPC: G01J1/42 ,  H01S5/00 ,  G01J1/04

CPC classification number: H01S5/0014 ,  G01J1/0411 ,  G01J1/0451 ,  G01J1/4257

Abstract: A dual testing system and method is used to perform both optical power and wavelength measurements on laser light emitted from a laser diode, such as a chip-on-submount (COS) laser diode or a laser diode in a bar laser. A testing fixture may be used to facilitate both measurements by simultaneously detecting the light for performing a first test including the optical power measurement(s) and reflecting the light for performing a second test including the wavelength measurement(s). The testing fixture may include an angled photodetector and an optical coupling system such as a collimating lens, a focal lens and an optical waveguide. The testing fixture may be electrically connected to an optical power testing module, such as a light-current-voltage (LIV) testing module, for performing the optical power measurement(s) and may be optically coupled to a wavelength measurement module, such as an optical spectrum analyzer (OSA) for performing the wavelength measurement(s).

公开(公告)号：US20160277117A1

公开(公告)日：2016-09-22

申请号：US14661772

申请日：2015-03-18

Applicant: Applied Optoelectronics, Inc.

Inventor： Jun Zheng ,  Stefan Murry ,  Klaus Alexander Anselm

IPC: H04B10/50 ,  H04J14/02 ,  H04B10/40 ,  H01S5/028 ,  H01S5/068

CPC classification number: H01S5/06256 ,  H01S5/02415 ,  H01S5/0287 ,  H01S5/06258 ,  H01S5/0687 ,  H01S5/124 ,  H01S5/4012 ,  H01S5/4087

Abstract: A parallel cavity tunable laser generally includes a semiconductor laser body defining a plurality of parallel laser cavities with a common output. Each of the parallel laser cavities is configured to be driven independently to generate laser light at a wavelength within a different respective wavelength range. The wavelength of the light generated in each of the laser cavities may be tuned, in response to a temperature change, to a channel wavelength within the respective wavelength range. The laser light generated in each selected one of the laser cavities is emitted from the common output at a front facet of the laser body. By selectively generating light in one or more of the laser cavities, one or more channel wavelengths may be selected for lasing and transmission.

Abstract translation: 平行腔可调激光器通常包括限定具有共同输出的多个平行激光腔的半导体激光器主体。 每个平行激光腔被配置为独立地驱动以产生波长在不同的相应波长范围内的激光。 在每个激光腔中产生的光的波长可以响应于温度变化而被调谐到相应波长范围内的通道波长。 在每个选择的一个激光腔中产生的激光在激光体的前面从公共输出发射。 通过选择性地在一个或多个激光腔中产生光，可以选择一个或多个沟道波长用于激光和透射。

公开(公告)号：US20160043799A1

公开(公告)日：2016-02-11

申请号：US14456124

申请日：2014-08-11

Applicant: Applied Optoelectronics, Inc.

Inventor： Jun Zheng ,  Yi Wang ,  I-Lung Ho ,  Klaus Alexander Anselm ,  Huanlin Zhang

IPC: H04B10/079 ,  H04B10/50 ,  H04J14/02 ,  H04B10/40 ,  H01S5/40 ,  H01S5/0683

CPC classification number: H04B10/07955 ,  H01S5/0268 ,  H01S5/0683 ,  H01S5/0687 ,  H01S5/4025 ,  H01S5/4087 ,  H04B10/40 ,  H04B10/503 ,  H04B10/506 ,  H04B10/572 ,  H04J14/02 ,  H04J14/0282

Abstract: Individual channels of a multiplexed laser array in a multi-channel optical transmitter are monitored at an output of an optical multiplexer. The monitoring may be used to confirm proper operation of each of the channels in the multiplexed laser array and/or to perform wavelength locking on each of the channels. Monitoring at the output of the optical multiplexer avoids the use of multiple photodetectors coupled directly to multiple lasers in the multiplexed laser array. The multiplexed laser array generally includes a plurality of laser emitters optically coupled to an optical multiplexer such as an arrayed waveguide grating (AWG). An optical transmitter with a monitored multiplexed laser array may be used, for example, in an optical line terminal (OLT) in a wavelength division multiplexed (WDM) passive optical network (PON) or in any other type of WDM optical communication system capable of transmitting optical signals on multiple channel wavelengths.

Abstract translation: 在多路复用器的输出端监视多通道光发射机中多路复用激光阵列的各个通道。 监视可用于确认多路复用激光器阵列中每个通道的正确操作和/或在每个通道上执行波长锁定。 在光学复用器的输出处的监控避免了使用多个激光器阵列中直接耦合到多个激光器的光电探测器。 复用的激光器阵列通常包括光学耦合到诸如阵列波导光栅（AWG）的光复用器的多个激光发射器。 具有受监控的多路复用激光器阵列的光发射机可以用于例如在波分多路复用（WDM）无源光网络（PON）中的光线路终端（OLT）中，或者可以使用任何其他类型的WDM光通信系统， 在多个信道波长上传输光信号。