公开(公告)号：WO2003103107A1

公开(公告)日：2003-12-11

申请号：PCT/US2003/017166

申请日：2003-05-29

Applicant: APPLIED OPTOELECTRONICS, INC.

Inventor： HWANG, Wen-Yen ,  ANSELM, Klaus, Alexander ,  ZHENG, Jun

IPC: H01S3/08

CPC classification number: H01S5/1082 ,  H01S5/12 ,  H01S5/1203 ,  H01S5/124 ,  H01S5/1243

Abstract: An edge-emitting laser (100) for generating single-longitudinal mode laser light. A semiconductor active region (120) amplifies, by stimulated emission, light in the laser cavity at a lasing wavelength. There are first and second grating sections (141,143) adjacent to the active region (120) and having first and second reflectivities respectively and a first effective index of refraction. The first and second grating sections (141,143) have a Bragg wavelength substantially equal to the lasing wavelength. A gratingless phase-shift section (142) is disposed adjacent to the active region (120) and between the first and second grating sections (141,143) and has a second index of refraction different than the first index of refraction and a length sufficient to impart a phase shift for light at the lasing wavelength sufficient to achieve longitudinal mode operation.

Abstract translation: 一种用于产生单纵模式激光的边缘发射激光器（100）。 半导体有源区（120）通过受激发射以激光波长放大激光腔中的光。 存在与有源区域（120）相邻并且分别具有第一和第二反射率的第一和第二光栅部分（141,143）和第一有效折射率。 第一和第二光栅部分（141,143）具有基本上等于激光波长的布拉格波长。 无栅相移部分（142）被布置成与有源区域（120）相邻并且在第一和第二光栅部分（141,143）之间并且具有不同于第一折射率的第二折射率和足以赋予 对于在足以实现纵向模式操作的激光波长的光的相移。

公开(公告)号：WO2003084010A1

公开(公告)日：2003-10-09

申请号：PCT/US2003/009835

申请日：2003-03-28

Applicant: APPLIED OPTOELECTRONICS, INC.

Inventor： HWANG, Wen-Yen ,  ANSELM, Klaus, Alexander ,  ZHENG, Jun

IPC: H01S3/08

CPC classification number: H01S5/18358 ,  H01S5/1833 ,  H01S5/18338 ,  H01S5/18369 ,  H01S5/205 ,  H01S2301/166

Abstract: A surface-emitting laser, such as a VCSEL (100), for generating single-transverse mode laser light at a lasing wavelength, has a first mirror (121) and a second mirror (148) positioned so as to define a laser cavity therebetween, and a semiconductor active region (141) disposed between the first and second mirrors (121, 148) for amplifying, by stimulated emission, light in the laser cavity at the lasing wavelength. An annular antiguide structure (150) is disposed within the laser cavity and between the active region (141) and one of the first and second mirrors (141, 148), the annular antiguide structure (150) comprising an antiguide material (n2) and having a central opening, the central opening comprising a second material (n1) having an index of refraction for light at the lasing wavelength smaller than that of the antiguide material, whereby the annular antiguide structure (150) causes preferential antiguiding of higher order transverse lasing modes in the laser cavity.

Abstract translation: 用于产生激光波长的单横模激光的诸如VCSEL（100）的表面发射激光器具有定位成在其间限定激光腔的第一反射镜（121）和第二反射镜（148） 以及设置在第一和第二反射镜（121,148）之间的半导体有源区（141），用于通过受激发射以激光波长放大激光腔中的光。 环形防水结构（150）设置在激光腔内并且在有源区域（141）与第一和第二反射镜（141,148）中的一个之间，环形防护结构（150）包括防护材料（n2）和 具有中心开口的中心开口包括第二材料（n1），该第二材料（n1）具有比激光波长小于防紫外线材料的光的光的折射率，由此环形抗蚀剂结构（150）引起高阶横向激光的优先防御 激光腔中的模式。

公开(公告)号：WO2003041232A1

公开(公告)日：2003-05-15

申请号：PCT/US2002/005591

申请日：2002-02-26

Applicant: APPLIED OPTOELECTRONICS, INC.

Inventor： HWANG, Wen-Yen ,  ANSELM, Klaus, Alexander ,  LIN, Chih-Hsiang ,  BAILLARGEON, James, N.

IPC: H01S3/10

CPC classification number: H01S3/1303 ,  H01S3/131 ,  H01S3/1392 ,  H01S5/0687

Abstract: A monitored laser system (810) includes a laser with a first mirror (816) and an exit mirror (814). The laser also has a laser cavity (812) defined at least in part by the first mirror (816) and the exit mirror (814). Within the laser cavity (812) is an active region that contains material that is capable of stimulated emission at one or more wavelengths such that laser light is emitted from the laser. A power source is coupled to the active region. A multiple reflectivity band reflector (MRBR) (824) is coupled to at least a portion of the emitted laser light. The MRBR has at least first and second wavelength bands with reflectivity above a particular reflectivity separated by at least a third wavelength band having reflectivity below the particular reflectivity. A first photodiode (826a) is coupled to at least a portion of the filtered laser light and produces an output based on the amount and wavelength of light received. A means for adjusting the emitted wavelength of the laser toward a particular wavelength in one of the at least first, second, and third wavelength bands based at least in part on the output of the first photodiode (826a).

Abstract translation: 被监视的激光系统810包括具有第一反射镜816和出射镜814的激光。激光器还具有至少部分地由第一反射镜816和出射镜814限定的激光腔812.在激光腔812内是 有源区域包含能够在一个或多个波长处受激发射的材料，使得激光从激光器发射。 电源耦合到有源区。 多反射带反射器MRBR 824耦合到所发射的激光的至少一部分。 MRBR具有至少第一和第二波长带，其具有高于具有低于特定反射率的反射率的至少第三波长带隔开的特定反射率的反射率。 第一光电二极管826a耦合到滤波的激光的至少一部分，并且基于所接收的光的量和波长产生输出。 用于至少部分地基于第一光电二极管826a的输出，将至少第一，第二和第三波长带中的一个波长的激光发射波长调整到特定波长的装置。

公开(公告)号：EP1509975A1

公开(公告)日：2005-03-02

申请号：EP03731472.1

申请日：2003-05-29

Applicant: Applied Optoelectronics Inc.

Inventor： HWANG, Wen-Yen ,  ANSELM, Klaus, Alexander ,  ZHENG, Jun

IPC: H01S3/08 ,  H01S5/00

CPC classification number: H01S5/1082 ,  H01S5/12 ,  H01S5/1203 ,  H01S5/124 ,  H01S5/1243

Abstract: An edge-emitting laser (100) for generating single-longitudinal mode laser light. A semiconductor active region (120) amplifies, by stimulated emission, light in the laser cavity at a lasing wavelength. There are first and second grating sections (141,143) adjacent to the active region (120) and having first and second reflectivities respectively and a first effective index of refraction. The first and second grating sections (141,143) have a Bragg wavelength substantially equal to the lasing wavelength. A gratingless phase-shift section (142) is disposed adjacent to the active region (120) and between the first and second grating sections (141,143) and has a second index of refraction different than the first index of refraction and a length sufficient to impart a phase shift for light at the lasing wavelength sufficient to achieve longitudinal mode operation.

Abstract translation: 一种用于产生单纵模激光的边缘发射激光器（100）。 半导体有源区（120）通过受激发射以激光波长放大激光腔中的光。 有第一和第二光栅部分（141,143）与有源区（120）相邻并分别具有第一和第二反射率以及第一有效折射率。 第一和第二光栅部分（141,143）具有基本上等于激射波长的布拉格波长。 无源相移部分（142）与有源区（120）相邻并位于第一和第二光栅部分（141,143）之间，并且具有与第一折射率不同的第二折射率和足以赋予 激射波长处的光的相移足以实现纵向模式操作。