公开(公告)号：WO2010145907A3

公开(公告)日：2011-05-19

申请号：PCT/EP2010056947

申请日：2010-05-20

Applicant: BAOLAB MICROSYSTEMS SL ,  TAYYIB SABIR ,  LLAMAS MOROTE MARC ANTONIO ,  VALLE FRAGA JUAN JOSE ,  MONTANYA I SILVESTRE JOSEP

Inventor： TAYYIB SABIR ,  LLAMAS MOROTE MARC ANTONIO ,  VALLE FRAGA JUAN JOSE ,  MONTANYA I SILVESTRE JOSEP

IPC: B81C1/00

CPC classification number: H01L28/40 ,  B81C1/00246 ,  B81C2203/0145 ,  B81C2203/0714 ,  B81C2203/0771 ,  H01L21/31116 ,  H01L23/5223 ,  H01L24/05 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/351 ,  H01L2924/00

Abstract: A MEMS integrated circuit including a plurality of layers where a portion includes one or more electronic elements on a semiconductor material substrate. The circuit includes a structure of interconnection layers having a bottom layer of conductor material and a top layer of conductor material where the layers are separated by at least one layer of dielectric material. The bottom layer may be formed above and in contact with an Inter Dielectric Layer. The circuit also includes a hollow space within the structure of interconnection layers and a MEMS device in communication with the structure of interconnection layers.

Abstract translation: 一种MEMS集成电路，包括多个层，其中一部分包括半导体材料基底上的一个或多个电子元件。 电路包括具有导体材料的底层和导体材料的顶层的互连层的结构，其中层被至少一层电介质材料隔开。 底层可以形成在介电层之上并与之互相接触。 该电路还包括互连层结构内的中空空间和与互连层结构通信的MEMS器件。

公开(公告)号：SG176093A1

公开(公告)日：2011-12-29

申请号：SG2011084241

申请日：2010-05-20

Applicant: BAOLAB MICROSYSTEMS SL

Inventor： TAYYIB SABIR ,  LLAMAS MOROTE MARC ANTONIO ,  VALLE FRAGA JUAN JOSE ,  MONTANYA I SILVESTRE JOSEP

Abstract: A MEMS integrated circuit including a plurality of layers where a portion includes one or more electronic elements on a semiconductor material substrate. The circuit includes a structure of interconnection layers having a bottom layer of conductor material and a top layer of conductor material where the layers are separated by at least one layer of dielectric material. The bottom layer may be formed above and in contact with an Inter Dielectric Layer. The circuit also includes a hollow space within the structure of interconnection layers and a MEMS device in communication with the structure of interconnection layers.