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公开(公告)号:DE4232998A1
公开(公告)日:1994-04-07
申请号:DE4232998
申请日:1992-10-01
Applicant: BASF AG
Inventor: HARTH KLAUS DR , HIBST HARTMUT DR , BROSIUS SIBYLLE DR , HINTZE-BRUENING HORST DR , HOLST ANDREAS DR , OSLOWSKI HANS-JOSEF DR
Abstract: Method for treating the surface of plastic parts (T) by low-pressure plasma processing, wherein an electrically conductive device with apertures is placed between the plastic part (T) and the plasma zone (A).
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公开(公告)号:DE4233000A1
公开(公告)日:1994-04-07
申请号:DE4233000
申请日:1992-10-01
Applicant: BASF AG
Inventor: HARTH KLAUS DR , HIBST HARTMUT DR , BROSIUS SIBYLLE DR , HINTZE-BRUENING HORST DR , HOLST ANDREAS DR , DUSCHEK WOLFGANG DR , OSLOWSKI HANS-JOSEF DR
IPC: B05D1/04 , C09D5/46 , C23C14/08 , C23C14/20 , C23C16/06 , C23C16/40 , B05D3/00 , B05D1/02 , B05D7/02 , C08J7/06 , C09D5/24
Abstract: The invention pertains to a method of pretreating plastic components for electrostatic enamelling by applying a thin film of an electrically conductive material in a plasma atmosphere.
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