公开(公告)号：DE3346716A1

公开(公告)日：1985-07-04

申请号：DE3346716

申请日：1983-12-23

Applicant: BASF AG

Inventor： WEGNER GERHARD PROF DR ,  LEYRER REINHOLD J DR ,  MUELLER MICHAEL A

IPC: G03F7/039 ,  G03F7/26 ,  C08F8/50 ,  C08F138/02 ,  G03C1/72

Abstract: In the production of resist patterns by applying a radiation-sensitive, positive-working resist layer to a substrate, imagewise irradiation of the resist layer with actinic radiation and removal of the irradiated portions of the layer to develop the resist pattern, use is made of a radiation-sensitive resist layer based, in particular, on soluble poly(diacetylenes) containing sensitisers which can be activiated by the actinic radiation and which, after their activation, induce or accelerate the molecular decomposition of the poly(diacetylenes). The invention also relates to dry-film resists with a temporary, dimensionally stable layer base, a radiation-sensitive resist layer which is applied thereto and is based, preferably, on soluble poly(diacetylenes), and, optionally, to a top layer on the radiation-sensitive resist layer; the radiation-sensitive resist layer contains sensitisers which can be activated by actinic radiation and which, after their activation, induce or accelerate the molecular decomposition of the poly(diacetylenes).

公开(公告)号：DE3346718A1

公开(公告)日：1985-07-04

申请号：DE3346718

申请日：1983-12-23

Applicant: BASF AG

Inventor： WEGNER GERHARD PROF DR ,  LEYRER REINHOLD J DR ,  MUELLER MICHAEL A

IPC: C08F8/00 ,  C08F8/50 ,  C08F38/00 ,  C08F38/02 ,  C08F138/02