RESIST STRIPPING COMPOSITIONS AND METHODS FOR MANUFACTURING ELECTRICAL DEVICES

    公开(公告)号:MY157093A

    公开(公告)日:2016-04-29

    申请号:MYPI2011005052

    申请日:2010-04-20

    Applicant: BASF SE

    Inventor: ANDREAS KLIPP

    Abstract: A LIQUID COMPOSITION COMPRISING (A) AT LEAST ONE POLAR ORGANIC SOLVENT, SELECTED FROM THE GROUP CONSISTING OF SOLVENTS EXHIBITING IN THE PRESENCE OF FROM 0.06 TO 4% BY WEIGHT OF DISSOLVED TETRAMETHYLAMMONIUM HYDROXIDE (B), THE WEIGHT PERCENTAGE BEING BASED ON THE COMPLETE WEIGHT OF THE RESPECTIVE TEST SOLUTION (AB), A CONSTANT REMOVAL RATE AT 50°C FOR A 30 NM THICK POLYMERIC BARRIER ANTI-REFLECTIVE LAYER CONTAINING DEEP UV ABSORBING CHROMOPHORIC GROUPS, (B) AT LEAST ONE QUATERNARY AMMONIUM HYDROXIDE, AND (C) AT LEAST ONE AROMATIC AMINE CONTAINING AT LEAST ONE PRIMARY AMINO GROUP, A METHOD FOR ITS PREPARATION AND A METHOD FOR MANUFACTURING ELECTRICAL DEVICES, EMPLOYING THE LIQUID COMPOSITION AS A RESIST STRIPPING COMPOSITION AND ITS USE FOR REMOVING NEGATIVE-TONE AND POSITIVE-TONE PHOTORESISTS AND POST ETCH RESIDUES IN THE MANUFACTURE OF 3D STACKED INTEGRATED CIRCUITS AND 3D WAFER LEVEL PACKAGINGS BY WAY OF PATTERNING THROUGH SILICON VIAS AND/OR BY PLATING AND BUMPING.

    AQUEOUS ACIDIC SOLUTION AND ETCHING SOLUTION AND METHOD FOR TEXTURING THE SURFACE OF SINGLE CRYSTAL AND POLYCRYSTAL SILICON SUBSTRATES

    公开(公告)号:MY157203A

    公开(公告)日:2016-05-13

    申请号:MYPI2013000526

    申请日:2011-08-25

    Applicant: BASF SE

    Abstract: AN AQUEOUS ACIDIC SOLUTION AND AN AQUEOUS ACIDIC ETCHING SOLUTION SUITABLE FOR TEXTURIZING THE SURFACE OF SINGLE CRYSTAL AND POLYCRYSTAL SILICON SUBSTRATES, - HYDROFLUORIC ACID; - NITRIC ACID; AND - AT LEAST ONE ANIONIC POLYETHER, WHICH IS SURFACE ACTIVE; A METHOD FOR TEXTURIZING THE SURFACE OF SINGLE CRYSTAL AND POLYCRYSTAL SILICON SUBSTRATES COMPRISING THE STEP OF (1) CONTACTING AT LEAST ONE MAJOR SURFACE OF A SUBSTRATE WITH THE SAID AQUEOUS ACIDIC ETCHING SOLUTION; (2) ETCHING THE AT LEAST ONE MAJOR SURFACE OF THE SUBSTRATE FOR A TIME AND AT A TEMPERATURE SUFFICIENT TO OBTAIN A SURFACE TEXTURIZATION CONSISTING OF RECESSES AND PROTRUSIONS; AND (3) REMOVING THE AT LEAST ONE MAJOR SURFACE OF THE SUBSTRATE FROM THE CONTACT WITH THE AQUEOUS ACIDIC ETCHING SOLUTION; AND A METHOD FOR MANUFACTURING PHOTOVOLTAIC CELLS AND SOLAR CELLS USING THE SAID SOLUTION AND THE SAID TEXTURIZING METHOD.

    LOW-K DIELECTRICS OBTAINABLE BY TWIN POLYMERIZATION

    公开(公告)号:MY152799A

    公开(公告)日:2014-11-28

    申请号:MYPI20104741

    申请日:2009-04-28

    Applicant: BASF SE

    Abstract: THE INVENTION RELATES TO A DIELECTRIC LAYER WITH A PERMITTIVITY OF 3.5 OR LESS COMPRISING A DIELECTRIC OBTAINABLE BY POLYMERIZING AT LEAST ONE TWIN MONOMER COMPRISING A) A FIRST MONOMER UNIT WHICH COMPRISES A METAL OR SEMIMETAL, AND B) A SECOND MONOMER UNIT WHICH IS CONNECTED TO THE FIRST MONOMER UNIT VIA A CHEMICAL BOND, WHEREIN THE POLYMERIZATION INVOLVES POLYMERIZING THE TWIN MONOMER WITH BREAKAGE OF THE CHEMICAL BOND AND FORMATION OF A FIRST POLYMER COMPRISING THE FIRST MONOMER UNIT AND OF A SECOND POLYMER COMPRISING THE SECOND MONOMER UNIT, AND WHEREIN THE FIRST AND THE SECOND MONOMER UNIT POLYMERIZE VIA A COMMON MECHANISM.

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