公开(公告)号：MY185453A

公开(公告)日：2021-05-19

申请号：MYPI2012000352

申请日：2010-07-26

Applicant: BASF SE

Inventor： KLIPP ANDREAS ,  CHEN CHIENSHIN ,  SHEN MEICHIN ,  CHAN CHIAHAO

Abstract: The present invention relates to a substantially water-free photoresist stripping compo-sition. Particularly, the present invention relates to a substantially water-free photore-sist stripping composition useful in removing the photoresist after ion-implant process, comprising: (a) an amine, (b) an organic solvent A, and (c) a co-solvent, wherein the composition is substantially water-free (

公开(公告)号：WO2011036076A3

公开(公告)日：2011-11-24

申请号：PCT/EP2010063505

申请日：2010-09-15

Applicant: BASF SE ,  LAI CHIEN-HSUN ,  HUANG TZU-TSANG ,  YANG SHAO-MIN ,  CHAN CHIAHAO

Inventor： LAI CHIEN-HSUN ,  HUANG TZU-TSANG ,  YANG SHAO-MIN ,  CHAN CHIAHAO

IPC: C25D3/38 ,  C25D5/18

CPC classification number: C25D3/38 ,  C25D5/18

Abstract: The present invention relates to a copper electroplating composition comprising a copper alkanesulf onate salt, a free alkanesulfonic acid, and one or more organic compounds selected from the group consisting of suppressors, accelerators, levelers, and mixtures thereof, in which the concentration of free acid is from 0 M to about 0.25 M and the composition is free of halide ions. The present invention also relates to a process of metalizing micro-sized trenches or vias in a substrate using the composition.

Abstract translation: 本发明涉及包含铜链烷磺酸铜盐，游离链烷磺酸和选自抑制剂，促进剂，流平剂和它们的混合物的一种或多种有机化合物的电镀铜组合物，其中游离酸 是从0M到约0.25M，并且该组合物不含卤化物离子。 本发明还涉及使用该组合物使衬底中的微尺寸沟槽或通孔金属化的方法。

公开(公告)号：WO2011012559A3

公开(公告)日：2011-03-24

申请号：PCT/EP2010060762

申请日：2010-07-26

Applicant: BASF SE ,  CHEN CHIENSHIN ,  SHEN MEICHIN ,  CHAN CHIAHAO ,  KLIPP ANDREAS

Inventor： CHEN CHIENSHIN ,  SHEN MEICHIN ,  CHAN CHIAHAO ,  KLIPP ANDREAS

IPC: H01L21/311 ,  G03F7/42

CPC classification number: H01L21/31133 ,  C11D11/0047 ,  G03F7/425

Abstract: The present invention relates to a substantially water-free photoresist stripping composition. Particularly, the present invention relates to a substantially water-free photoresist stripping composition useful in removing the photoresist after ion-implant process, comprising: (a) an amine, (b) an organic solvent A, and (c) a co-solvent, wherein the composition is substantially water-free (2O). The present invention also provides a process for post-ion implantation stripping by using the composition of the present invention.

Abstract translation: 本发明涉及基本上无水的光致抗蚀剂剥离组合物。 特别地，本发明涉及用于在离子注入工艺之后去除光致抗蚀剂的基本上无水的光致抗蚀剂剥离组合物，其包括：（a）胺，（b）有机溶剂A和（c）共溶剂 ，其中所述组合物基本上是无水的（20）。 本发明还提供了通过使用本发明的组合物进行离子后植入剥离的方法。

公开(公告)号：SG177755A1

公开(公告)日：2012-03-29

申请号：SG2012005443

申请日：2010-07-26

Applicant: BASF SE

Inventor： CHEN CHIENSHIN ,  SHEN MEICHIN ,  CHAN CHIAHAO ,  KLIPP ANDREAS

Abstract: The present invention relates to a substantially water-free photoresist stripping composition. Particularly, the present invention relates to a substantially water-free photoresist stripping composition useful in removing the photoresist after ion-implant process, comprising: (a) an amine, (b) an organic solvent A, and (c) a co-solvent, wherein the composition is substantially water-free (

公开(公告)号：SG10201404328QA

公开(公告)日：2014-10-30

申请号：SG10201404328Q

申请日：2010-07-26

Applicant: BASF SE

Inventor： CHEN CHIENSHIN ,  SHEN MEICHIN ,  CHAN CHIAHAO ,  KLIPP ANDREAS

Abstract: The present invention relates to a substantially water-free photoresist stripping composition. Particularly, the present invention relates to a substantially water-free photoresist stripping composition useful in removing the photoresist after ion-implant process, comprising: (a) an amine, (b) an organic solvent A, and (c) a co-solvent, wherein the composition is substantially water-free (