公开(公告)号：WO2011012559A3

公开(公告)日：2011-03-24

申请号：PCT/EP2010060762

申请日：2010-07-26

Applicant: BASF SE ,  CHEN CHIENSHIN ,  SHEN MEICHIN ,  CHAN CHIAHAO ,  KLIPP ANDREAS

Inventor： CHEN CHIENSHIN ,  SHEN MEICHIN ,  CHAN CHIAHAO ,  KLIPP ANDREAS

IPC: H01L21/311 ,  G03F7/42

CPC classification number: H01L21/31133 ,  C11D11/0047 ,  G03F7/425

Abstract: The present invention relates to a substantially water-free photoresist stripping composition. Particularly, the present invention relates to a substantially water-free photoresist stripping composition useful in removing the photoresist after ion-implant process, comprising: (a) an amine, (b) an organic solvent A, and (c) a co-solvent, wherein the composition is substantially water-free (2O). The present invention also provides a process for post-ion implantation stripping by using the composition of the present invention.

Abstract translation: 本发明涉及基本上无水的光致抗蚀剂剥离组合物。 特别地，本发明涉及用于在离子注入工艺之后去除光致抗蚀剂的基本上无水的光致抗蚀剂剥离组合物，其包括：（a）胺，（b）有机溶剂A和（c）共溶剂 ，其中所述组合物基本上是无水的（20）。 本发明还提供了通过使用本发明的组合物进行离子后植入剥离的方法。

公开(公告)号：SG187756A1

公开(公告)日：2013-03-28

申请号：SG2013009360

申请日：2011-08-25

Applicant: BASF SE

Inventor： BRAUN SIMON ,  KLIPP ANDREAS ,  ROEGER-GOEPFERT CORNELIA ,  BITTNER CHRISTIAN ,  SHEN MEICHIN ,  LIN CHENGWEI

Abstract: An aqueous acidic solution and an aqueous acidic etching solution suitable for texturizing the surface of single crystal and polycrystal silicon substrates, hydrofluoric acid; nitric acid; and at least one anionic polyether, which is surface active; a method for texturizing the surface of single crystal and polycrystal silicon substrates comprising the step of (1 ) contacting at least one major surface of a substrate with the said aqueous acidic etching solution; (2) etching the at least one major surface of the substrate for a time and at a temperature sufficient to obtain a surface texturization consisting of recesses and protrusions; and (3) removing the at least one major surface of the substrate from the contact with the aqueous acidic etching solution; and a method for manufacturing photovoltaic cells and solar cells using the said solution and the said texturizing method.

公开(公告)号：MY185453A

公开(公告)日：2021-05-19

申请号：MYPI2012000352

申请日：2010-07-26

Applicant: BASF SE

Inventor： KLIPP ANDREAS ,  CHEN CHIENSHIN ,  SHEN MEICHIN ,  CHAN CHIAHAO

Abstract: The present invention relates to a substantially water-free photoresist stripping compo-sition. Particularly, the present invention relates to a substantially water-free photore-sist stripping composition useful in removing the photoresist after ion-implant process, comprising: (a) an amine, (b) an organic solvent A, and (c) a co-solvent, wherein the composition is substantially water-free (

公开(公告)号：SG177755A1

公开(公告)日：2012-03-29

申请号：SG2012005443

申请日：2010-07-26

Applicant: BASF SE

Inventor： CHEN CHIENSHIN ,  SHEN MEICHIN ,  CHAN CHIAHAO ,  KLIPP ANDREAS

Abstract: The present invention relates to a substantially water-free photoresist stripping composition. Particularly, the present invention relates to a substantially water-free photoresist stripping composition useful in removing the photoresist after ion-implant process, comprising: (a) an amine, (b) an organic solvent A, and (c) a co-solvent, wherein the composition is substantially water-free (

公开(公告)号：SG10201404328QA

公开(公告)日：2014-10-30

申请号：SG10201404328Q

申请日：2010-07-26

Applicant: BASF SE

Inventor： CHEN CHIENSHIN ,  SHEN MEICHIN ,  CHAN CHIAHAO ,  KLIPP ANDREAS

Abstract: The present invention relates to a substantially water-free photoresist stripping composition. Particularly, the present invention relates to a substantially water-free photoresist stripping composition useful in removing the photoresist after ion-implant process, comprising: (a) an amine, (b) an organic solvent A, and (c) a co-solvent, wherein the composition is substantially water-free (

公开(公告)号：EP2611881A4

公开(公告)日：2017-08-30

申请号：EP11821199

申请日：2011-08-25

Applicant: BASF SE

Inventor： BRAUN SIMON ,  KLIPP ANDREAS ,  RÖGER-GÖPFERT CORNELIA ,  BITTNER CHRISTIAN ,  SHEN MEICHIN ,  LIN CHENGWEI

IPC: C09K13/08 ,  H01L21/302

CPC classification number: H01L21/30604 ,  C09K13/08 ,  H01L21/30608 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/18 ,  Y02E10/50 ,  Y10T428/24355