公开(公告)号：SG11201808692QA

公开(公告)日：2018-11-29

申请号：SG11201808692Q

申请日：2016-04-27

Applicant: BASF SE

Inventor： REICHARDT DR ,  SIEBERT MAX ,  LAN YONGQING ,  LAUTER MICHAEL ,  USMAN IBRAHIM SHEIK ANSAR ,  GOLZARIN REZA ,  GUEVENC DR ,  PROELSS DR ,  LEUNISSEN LEONARDUS

IPC: C09G1/02 ,  H01L21/321

Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) an anionic surfactant of the general formula (I) R-S wherein R is C5-C20-alkyl, C5-C20-alkenyl, C5-C20-alkylacyl or C5-C20-alkenylacyl and S is a sulfonic acid derivative, an amino acid derivative or a phosphoric acid derivative or salts or mixtures thereof (C) at least one amino acid, (D) at least one oxidizer (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.