公开(公告)号：KR20180039709A

公开(公告)日：2018-04-18

申请号：KR20187007107

申请日：2016-08-09

Applicant: BASF SE

Inventor： REICHARDT ROBERT ,  SIEBERT MAX ,  LAN YONGQING ,  LAUTER MICHAEL ,  USMAN IBRAHIM SHEIK ANSAR ,  GOLZARIAN REZA M ,  WEI TE YU ,  GUEVENC HACI OSMAN ,  PROELSS JULIAN ,  LEUNISSEN LEONARDUS

IPC: C09G1/02 ,  C09G1/04 ,  C09K3/14 ,  H01L21/306

CPC classification number: C09G1/02

Abstract: (i) 코발트및/또는 (ii) 코발트합금및 (iii) TiN 및/또는 TaN 을함유하는기판 (S) 의화학기계연마를위한화학기계연마 (CMP) 조성물 (Q) 의용도로서, 상기 CMP 조성물 (Q) 이하기를포함하는 CMP 조성물 (Q) 의용도: (E) 무기입자, (F) 아미노기및 산기 (Y) 를함유하는하나이상의유기화합물 (상기화합물은 n 개의아미노기및 n+1 개이상의산성프로톤을함유하고, n 은정수≥ 1 이다), (G) 각각의 CMP 조성물의총 중량에대해서, 0.2 wt.% 내지 2.5 wt.% 의양의하나이상의산화제, (H) 수성매질, CMP 조성물 (Q) 은 6 초과 9 미만의 pH 를가진다.

公开(公告)号：WO2014006526A3

公开(公告)日：2014-02-27

申请号：PCT/IB2013055102

申请日：2013-06-21

Applicant: BASF SE ,  BASF SCHWEIZ AG ,  BASF CHINA CO LTD

Inventor： REICHARDT ROBERT ,  LAUTER MICHAEL ,  CHIU WEI LAN WILLIAM ,  LI YUZHUO

IPC: C09G1/02 ,  C09K3/14

CPC classification number: C09G1/02 ,  H01L21/3212

Abstract: A chemical mechanical polishing composition comprising: (A) Inorganic particles, organic particles, or a mixture or composite thereof, wherein the particles are cocoon-shaped, (B) a non-ionic surfactant, (C) a carbonate or hydrogen carbonate salt, (D) an alcohol, and (M) an aqueous medium. A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of a substrate used in the semiconductor industry in the presence of a CMP composition and the use of CMP composition thereof are also provided.

Abstract translation: 一种化学机械抛光组合物，其包含：（A）无机颗粒，有机颗粒或其混合物或复合物，其中所述颗粒为茧形，（B）非离子表面活性剂，（C）碳酸盐或碳酸氢盐， （D）醇，和（M）水性介质。 还提供了一种制造半导体器件的方法，其包括在CMP组合物存在下用于半导体工业中的衬底的化学机械抛光以及其CMP组成的用途。

公开(公告)号：WO2015004567A3

公开(公告)日：2015-05-14

申请号：PCT/IB2014062747

申请日：2014-07-01

Applicant: BASF SE ,  BASF CHINA CO LTD

Inventor： REICHARDT ROBERT ,  KALLER MARTIN ,  LAUTER MICHAEL ,  LI YUZHUO ,  KLIPP ANDREAS

IPC: C09G1/02 ,  C09G1/00 ,  C09G1/04 ,  H01L21/02 ,  H01L21/321

CPC classification number: C09K3/1463 ,  C09G1/02 ,  H01L21/3212

Abstract: A chemical-mechanical polishing (CMP) composition is provided comprising (A) one or more compounds selected from the group of benzotriazole derivatives which act as corrosion inhibitors and (B) inorganic particles, organic particles, or a composite or mixture thereof. The invention also relates to the use of certain compounds selected from the group of benzotriazole derivatives as corrosion inhibitors, especially for increasing the selectivity of a chemical mechanical polishing (CMP) composition for the removal of tantalum or tantalum nitride from a substrate for the manufacture of a semiconductor device in the presence of copper on said substrate.

Abstract translation: 提供化学机械抛光（CMP）组合物，其包含（A）一种或多种选自作为防腐剂的苯并三唑衍生物的化合物和（B）无机颗粒，有机颗粒或其复合物或混合物。 本发明还涉及使用选自苯并三唑衍生物的某些化合物作为缓蚀剂，特别是用于提高化学机械抛光（CMP）组合物从用于制造钽酸铅的基材中除去钽或氮化钽的选择性 在所述衬底上存在铜的半导体器件。

公开(公告)号：WO2014006546A3

公开(公告)日：2014-02-27

申请号：PCT/IB2013055273

申请日：2013-06-27

Applicant: BASF SE ,  BASF SCHWEIZ AG ,  BASF CHINA CO LTD

Inventor： REICHARDT ROBERT ,  LAUTER MICHAEL ,  LI YUZHUO

IPC: G09G1/02 ,  C09K3/14 ,  G09G1/14

CPC classification number: C09G1/02 ,  H01L21/3212

Abstract: A chemical mechanical polishing composition comprising: (A) inorganic particles, organic particles, or a mixture or composite thereof, wherein the particles are cocoon-shaped, (B) a non-ionic surfactant, (C) an aromatic compound comprising at least one acid group, or a salt thereof, and (M) an aqueous medium. A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of a substrate in the presence of a CMP composition and the use of CMP composition in the semiconductor industry are also provided.

Abstract translation: 一种化学机械抛光组合物，其包含：（A）无机颗粒，有机颗粒或其混合物或复合物，其中所述颗粒是茧形的，（B）非离子表面活性剂，（C）包含至少一种 酸基或其盐，和（M）水性介质。 还提供了一种用于制造半导体器件的方法，其包括在CMP组合物存在下对衬底的化学机械抛光以及在半导体工业中使用CMP组合物。

公开(公告)号：SG11201804636YA

公开(公告)日：2018-07-30

申请号：SG11201804636Y

申请日：2016-12-20

Applicant: BASF SE

Inventor： DÄSCHLEIN CHRISTIAN ,  SIEBERT MAX ,  LAUTER MICHAEL ,  PRZYBYLSKI PETER ,  PROELSS JULIAN ,  KLIPP ANDREAS ,  GUEVENC HACI OSMAN ,  LEUNISSEN LEONARDUS ,  BAUMANN ROELF-PETER ,  WEI TE YU

IPC: H01L21/321 ,  C11D3/00 ,  C11D3/37 ,  C11D11/00

Abstract: Described is a post chemical-mechanical-polishing (post-CMP) cleaning composition comprising or consisting of: (A) one or more nonionic polymers selected from the group consisting of poly- acrylamides, polyhydroxyethyl(meth)acrylates (PHE(M)A), polyvinylpyrrolidone (PVP), polyvinyl alcohol (PVA), polymers of formula (I), and mixtures thereof, wherein R1 is hydrogen, methyl, ethyl, n-propyl, /so-propyl, n-butyl, iso-butyl, or sec-butyl, R2 is hydrogen or methyl, and n is an integer, (B) poly(acrylic acid) (PAA) or acrylic acid-maleic acid copolymer with a mass average molar mass (Mw) of up to 10,000 g/mol, and (C) water, wherein the pH of the composition is in the range of from 7.0 to 10.5.

公开(公告)号：SG11201606157VA

公开(公告)日：2016-08-30

申请号：SG11201606157V

申请日：2015-01-21

Applicant: BASF SE

Inventor： LAUTER MICHAEL ,  LANGE ROLAND ,  NOLLER BASTIAN MARTEN ,  SIEBERT MAX

IPC: C09G1/18 ,  C09G1/02 ,  H01L21/304

公开(公告)号：EP2688966A4

公开(公告)日：2014-11-12

申请号：EP12760432

申请日：2012-03-19

Applicant: BASF SE

Inventor： NOLLER BASTIAN ,  LAUTER MICHAEL ,  SUGIHARTO ALBERT BUDIMAN ,  LI YUZHUO ,  RUSHING KENNETH ,  FRANZ DIANA ,  BÖHN ROLAND ,  GAO NING

IPC: C09G1/02 ,  H01L21/321

CPC classification number: H01L21/3212 ,  C09G1/02 ,  C09G1/04 ,  C09K3/1463 ,  H01L21/30625

公开(公告)号：MY176981A

公开(公告)日：2020-08-31

申请号：MYPI2015000013

申请日：2013-06-21

Applicant: BASF SE

Inventor： LAUTER MICHAEL ,  CHIU WEI LAN WILLIAM ,  REICHARDT ROBERT ,  LI YUZHUO

Abstract: A chemical mechanical polishing composition comprising: (A) Inorganic particles, organic particles, or a mixture or composite thereof, wherein the particles are cocoon-shaped, (B) a non-ionic surfactant, (C) a carbonate or hydrogen carbonate salt, (D) an alcohol, and (M) an aqueous medium. A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of a substrate used in the semiconductor industry in the presence of a CMP composition and the use of CMP composition thereof are also provided.

公开(公告)号：MY170292A

公开(公告)日：2019-07-17

申请号：MYPI2014003626

申请日：2013-06-27

Applicant: BASF SE

Inventor： LAUTER MICHAEL ,  REICHARDT ROBERT ,  LI YUZHUO (DECEASED)

Abstract: A chemical mechanical polishing composition comprising: (A) inorganic particles, organic particles, or a mixture or composite thereof, wherein the particles are cocoon-shaped, (8) a non-ionic surfactant, (C) an aromatic compound comprising at least one acid group, or a salt thereof, and (M) an aqueous medium. A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of a substrate in the presence of a CMP composition and the use of CMP composition in the semiconductor industry are also provided. (No suitable figure)

公开(公告)号：SG11201808692QA

公开(公告)日：2018-11-29

申请号：SG11201808692Q

申请日：2016-04-27

Applicant: BASF SE

Inventor： REICHARDT DR ,  SIEBERT MAX ,  LAN YONGQING ,  LAUTER MICHAEL ,  USMAN IBRAHIM SHEIK ANSAR ,  GOLZARIN REZA ,  GUEVENC DR ,  PROELSS DR ,  LEUNISSEN LEONARDUS

IPC: C09G1/02 ,  H01L21/321

Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) an anionic surfactant of the general formula (I) R-S wherein R is C5-C20-alkyl, C5-C20-alkenyl, C5-C20-alkylacyl or C5-C20-alkenylacyl and S is a sulfonic acid derivative, an amino acid derivative or a phosphoric acid derivative or salts or mixtures thereof (C) at least one amino acid, (D) at least one oxidizer (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.