公开(公告)号：WO2014154521A2

公开(公告)日：2014-10-02

申请号：PCT/EP2014055358

申请日：2014-03-18

Applicant: BASF SE

Inventor： EICKEMEYER FELIX ,  HERMES WILFRIED ,  WALDMANN DANIEL ,  SEELER FABIAN ,  KÄLBLEIN DANIEL

IPC: C01G19/00

CPC classification number: C01G19/006 ,  C01P2006/33 ,  H01L21/0237 ,  H01L21/02521 ,  H01L21/02628 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78681

Abstract: The invention relates to the production of ϒ-caesium-tin-iodide from a caesium-tin-iodide solution, wherein the solvent is evaporated and the caesium-tin-iodide is then thermally treated, and to a solvent-based application of ϒ-caesium-tin-iodide, Cs1-xAxB1-yCyI3, Bi1-xMI3-yXy or bismuth-iodide to a substrate and use as semi-conductor material in transistor structures, wherein a CsSnI3 solution, a Cs1-xAxB1-yCyI3-zXz-solution, a Bi1-xMxI3-yXy-solution or a BiI3-solution is applied to a substrate using pressure technologies, wherein the application is carried out under an inert atmosphere and/or vacuum using a CsSnI3-solution.

Abstract translation: 本发明涉及生产由CäsiumZinn碘化溶液Υ-CäsiumZinn碘化物的方法，其中所述溶剂蒸发，并将CäsiumZinn碘化物进行热处理，以及Υ-铯的基于溶剂的顺序 碘化锡，CS1-xAxB1-yCyI3，在基板上BI1-xMI3-YXY或Bismuthiodid并且如在晶体管结构的半导体材料，其中a CsSnI3溶液，CS1-xAxB1-yCyI3-ZXZ溶液，BI1-xMxI3-使用 YXY溶液或BiI3溶液到使用印刷技术的基板施加，使用惰性气氛和/或在真空下CsSnI3作业的溶液来执行。

公开(公告)号：EP3158025A4

公开(公告)日：2017-11-29

申请号：EP15809847

申请日：2015-06-16

Applicant: BASF SE

Inventor： GESSNER THOMAS ,  KÄLBLEIN DANIEL ,  BRILL JOCHEN ,  MUSIOL THOMAS ,  WÜRTHNER FRANK ,  SURARU SABIN-LUCIAN ,  STOLTE MATTHIAS

IPC: C09B57/08 ,  C07D471/06 ,  C09K11/06 ,  H01L27/28 ,  H01L29/786 ,  H01L51/00 ,  H01L51/05 ,  H01L51/42 ,  H01L51/50

CPC classification number: H01L51/0053 ,  C07D471/06 ,  C09B57/08 ,  H01L27/28 ,  H01L29/786 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0558 ,  H01L51/42 ,  Y02E10/549

Abstract: The present invention relates to compounds of the formula (I) where R1 and R2 independently of each other, are selected from 1H,1H-C2-C10- perfluoroalkyl and 1H,1H,2H,2H-C3-C10-perfluoroalkyl,except for the compound of formula (I), where R1 and R2 are both 1H,1H-perfluorobutyl, and to their use, especially as an n-type semiconductor.