METHOD FOR PRODUCING GAMMA-CSSNI3 AND USE OF GAMMA-CSSNI3, CS1-XAXB1-YCYI3-ZXZ, BII3 OR BI1-XMI3-YXY FOR THIN-LAYER TRANSISTORS
    2.
    发明申请
    METHOD FOR PRODUCING GAMMA-CSSNI3 AND USE OF GAMMA-CSSNI3, CS1-XAXB1-YCYI3-ZXZ, BII3 OR BI1-XMI3-YXY FOR THIN-LAYER TRANSISTORS 审中-公开
    用于生产伽马CSSNI3和γ-CSSNI3,CS1 XAXB1-YCYI3-ZXZ,BiI3或BI1 XMI3-YXY的使用薄膜晶体管

    公开(公告)号:WO2014154521A2

    公开(公告)日:2014-10-02

    申请号:PCT/EP2014055358

    申请日:2014-03-18

    Applicant: BASF SE

    Abstract: The invention relates to the production of ϒ-caesium-tin-iodide from a caesium-tin-iodide solution, wherein the solvent is evaporated and the caesium-tin-iodide is then thermally treated, and to a solvent-based application of ϒ-caesium-tin-iodide, Cs1-xAxB1-yCyI3, Bi1-xMI3-yXy or bismuth-iodide to a substrate and use as semi-conductor material in transistor structures, wherein a CsSnI3 solution, a Cs1-xAxB1-yCyI3-zXz-solution, a Bi1-xMxI3-yXy-solution or a BiI3-solution is applied to a substrate using pressure technologies, wherein the application is carried out under an inert atmosphere and/or vacuum using a CsSnI3-solution.

    Abstract translation: 本发明涉及生产由CäsiumZinn碘化溶液Υ-CäsiumZinn碘化物的方法,其中所述溶剂蒸发,并将CäsiumZinn碘化物进行热处理,以及Υ-铯的基于溶剂的顺序 碘化锡,CS1-xAxB1-yCyI3,在基板上BI1-xMI3-YXY或Bismuthiodid并且如在晶体管结构的半导体材料,其中a CsSnI3溶液,CS1-xAxB1-yCyI3-ZXZ溶液,BI1-xMxI3-使用 YXY溶液或BiI3溶液到使用印刷技术的基板施加,使用惰性气氛和/或在真空下CsSnI3作业的溶液来执行。

    Solar cell construction
    4.
    发明专利

    公开(公告)号:AU2008290641B9

    公开(公告)日:2013-10-31

    申请号:AU2008290641

    申请日:2008-08-13

    Applicant: BASF SE

    Abstract: The invention relates to a solar cell construction (10) having at least one transparent photovoltaic cell (42), particularly having a colorant solar cell or a thin-layer semiconductor cell. Said cell comprises at least one polymer layer (36) provided with a fluorescent material or a mixture of a plurality of fluorescent materials covering at least one transparent photovoltaic cell (42).

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