公开(公告)号：WO2014154521A2

公开(公告)日：2014-10-02

申请号：PCT/EP2014055358

申请日：2014-03-18

Applicant: BASF SE

Inventor： EICKEMEYER FELIX ,  HERMES WILFRIED ,  WALDMANN DANIEL ,  SEELER FABIAN ,  KÄLBLEIN DANIEL

IPC: C01G19/00

CPC classification number: C01G19/006 ,  C01P2006/33 ,  H01L21/0237 ,  H01L21/02521 ,  H01L21/02628 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78681

Abstract: The invention relates to the production of ϒ-caesium-tin-iodide from a caesium-tin-iodide solution, wherein the solvent is evaporated and the caesium-tin-iodide is then thermally treated, and to a solvent-based application of ϒ-caesium-tin-iodide, Cs1-xAxB1-yCyI3, Bi1-xMI3-yXy or bismuth-iodide to a substrate and use as semi-conductor material in transistor structures, wherein a CsSnI3 solution, a Cs1-xAxB1-yCyI3-zXz-solution, a Bi1-xMxI3-yXy-solution or a BiI3-solution is applied to a substrate using pressure technologies, wherein the application is carried out under an inert atmosphere and/or vacuum using a CsSnI3-solution.

Abstract translation: 本发明涉及生产由CäsiumZinn碘化溶液Υ-CäsiumZinn碘化物的方法，其中所述溶剂蒸发，并将CäsiumZinn碘化物进行热处理，以及Υ-铯的基于溶剂的顺序 碘化锡，CS1-xAxB1-yCyI3，在基板上BI1-xMI3-YXY或Bismuthiodid并且如在晶体管结构的半导体材料，其中a CsSnI3溶液，CS1-xAxB1-yCyI3-ZXZ溶液，BI1-xMxI3-使用 YXY溶液或BiI3溶液到使用印刷技术的基板施加，使用惰性气氛和/或在真空下CsSnI3作业的溶液来执行。

公开(公告)号：AU2014317208A1

公开(公告)日：2016-03-24

申请号：AU2014317208

申请日：2014-09-02

Applicant: BASF SE

Inventor： HERMES WILFRIED ,  BRUDER INGMAR ,  ERK PETER ,  WALDMANN DANIEL

IPC: C07F7/24 ,  B82Y10/00 ,  C07C211/65 ,  H01G9/20 ,  H01L51/42

Abstract: The present invention relates to a new amorphous material with advantageous properties as charge transport material and/or absorber material for various applications, in particular in photoelectric conversion devices, i.e. an amorphous material of the composition (R

公开(公告)号：AU2014317208B2

公开(公告)日：2018-11-01

申请号：AU2014317208

申请日：2014-09-02

Applicant: BASF SE

Inventor： HERMES WILFRIED ,  BRUDER INGMAR ,  ERK PETER ,  WALDMANN DANIEL

IPC: C07F7/24 ,  B82Y10/00 ,  C07C211/65 ,  H01G9/20 ,  H01L51/42

Abstract: The present invention relates to a new amorphous material with advantageous properties as charge transport material and/or absorber material for various applications, in particular in photoelectric conversion devices, i.e. an amorphous material of the composition (R

公开(公告)号：SG11202005470SA

公开(公告)日：2020-07-29

申请号：SG11202005470S

申请日：2018-11-09

Applicant: BASF SE ,  UNIV WAYNE STATE

Inventor： MAYR LUKAS ,  SCHWEINFURTH DAVID DOMINIQUE ,  WALDMANN DANIEL ,  WINTER CHARLES ,  BLAKENEY KYLE ,  KLENK SINJA VERENA ,  WEIGUNY SABINE ,  WEERATHUNGA SIRIKKATHUGE NILANKA ,  KARUNARATNE THARINDU MALAWARA ARACHCHIGE NIMANTHAKA

IPC: C23C16/20 ,  C07F5/06 ,  C07F17/00 ,  C23C16/06 ,  C23C16/08 ,  C23C16/455

Abstract: The present invention is in the field of processes for preparing inorganic metal-containing films. The process comprises bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) in the gaseous statewherein A is NR 2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group,E is NR or O,n is 0, 1 or 2, m is 0, 1 or 2, andR' is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

公开(公告)号：SG11201901887UA

公开(公告)日：2019-04-29

申请号：SG11201901887U

申请日：2017-10-05

Applicant: BASF SE

Inventor： SCHWEINFURTH DAVID DOMINIQUE ,  ABELS FALKO ,  MAYR LUKAS ,  LOEFFLER DANIEL ,  WALDMANN DANIEL

IPC: C23C14/58 ,  C23C16/455 ,  C23C16/56

公开(公告)号：SG11202008818RA

公开(公告)日：2020-11-27

申请号：SG11202008818R

申请日：2019-04-10

Applicant: BASF SE ,  UNIV WAYNE STATE

Inventor： WINTER CHARLES HARTGER ,  BLAKENEY KYLE ,  MAYR LUKAS ,  SCHWEINFURTH DAVID DOMINIQUE ,  WEIGUNY SABINE ,  WALDMANN DANIEL

IPC: C07F5/06 ,  C23C16/12 ,  C23C16/455

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal-containing films comprising (a) depositing a metal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a compound of general formula (I) wherein Z is a C2-C4 alkylene group, and R is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

公开(公告)号：CA3016378A1

公开(公告)日：2017-09-14

申请号：CA3016378

申请日：2017-03-07

Applicant: BASF SE

Inventor： WALDMANN DANIEL ,  ROEDER JENS ,  GOEBEL MICHAEL ,  AHLF MARAIKE

IPC: G02F1/155 ,  G02F1/163

Abstract: The invention relates to a process for switching an electrochromic cell (100) comprising at least a first electrode layer (106) and a second electrode layer (108) each capable of reversibly inserting ions. Further the cell (100) comprises an ion-conducting layer (110) that separates the first electrode layer (106) and the second electrode layer (108) and a temperature sensor (216) for measuring a temperature (T) in or on or in the vicinity of the electrochromic cell (100). Moreover, a first contact member (101) is electronically connected with the first electrode layer (106) and a second contact member (102) is electronically connected with the second electrode layer (108), wherein the first (106) and the second electrode layer (108) are counter electrodes to each other. Furthermore, at least said first electrode layer (106) comprises an organic polymer matrix and dispersed within said organic polymer matrix an electrochromic material, electronically conductive nanoobjects (112) and an electrolyte (114) dissolved in a solvent. Further, the process comprises to measure the current (iC) flowing through the cell (100) if a voltage (UC) is applied to the electrode layers (106, 108), and applying a voltage (UC) to contact members (101, 102) and varying the applied voltage (UC) as a function of current (iC), such that the voltage (UC) generated between the electrode layers (106, 108) is kept within predetermined temperature (T) dependent safe redox limits and such that the cell current (iC) is limited to predetermined temperature-dependent limits. Moreover, the applied voltage (UC) is only increased if the cell current (iC) is less than a maximum cell current (imax), determined according to: imax = jmax x Area + (T-T0) x F, where jmax is a predetermined maximum current density, Area is the active cell area, T is the temperature of the electrochromic cell (100) measured with the temperature sensor (216), T0 is a reference temperature, and F a factor. Further, the invention relates to an apparatus (200) and a system (300) for performing the process.