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    SEPARATION OF SEMI-CONDUCTING AND METALLIC SINGLE-WALLED CARBON NANOTUBES USING A POLYTUNGSTATE
    1.
    发明申请
    SEPARATION OF SEMI-CONDUCTING AND METALLIC SINGLE-WALLED CARBON NANOTUBES USING A POLYTUNGSTATE 审中-公开
    使用聚钨酸钠分离半导体和金属单壁碳纳米管

    公开(公告)号：WO2016046153A1

    公开(公告)日：2016-03-31

    申请号：PCT/EP2015/071640

    申请日：2015-09-22

    Applicant: BASF SE

    Inventor： REIS, Wieland ,  KRAUS, Alexander ,  MIKHAEL, Jules ,  KAISER, Michael ,  SCHWAB, Matthias Georg ,  WEITZ, Thomas ,  KETTNER, Michel

    IPC: C01B31/02

    CPC classification number: C01B32/172 ,  C01B2202/22 ,  G01N21/33 ,  H01L51/0048 ,  H01L51/0545 ,  Y02E10/549

    Abstract: The present invention relates to a method for separating semi-conducting and metallic single-walled carbon nanotubes from each other and, if present, from other carbonaceous material, or for separating semi-conducting single-walled carbon nanotubes or metallic single-walled carbon nanotubes from other carbonaceous material via density separation using a solution of a polytungstate; to semi-conducting single-walled carbon nanotubes obtainable by this method; and to the use of these semi-conducting single-walled carbon nanotubes; as well as to metallic single-walled carbon nanotubes obtainable by this method; and to their use. The invention further relates to the use of a polytungstate, in particular sodium polytungstate, for separating semi-conducting single-walled carbon nanotubes from metallic single-walled carbon nanotubes, or for separating semi-conducting single-walled carbon nanotubes from undesired carbonaceous material, in particular from metallic single-walled carbon nanotubes, or for separating metallic single-walled carbon nanotubes from undesired carbonaceous material, in particular from semi-conducting single-walled carbon nanotubes. The invention also relates to specific polyarylethers containing phosphate groups and their use as surface-active compounds.

    Abstract translation: 本发明涉及一种用于将半导体和金属单壁碳纳米管彼此分离的方法，如果存在的话，则从其它含碳材料分离，或用于分离半导体单壁碳纳米管或金属单壁碳纳米管 从其他碳质材料通过密度分离使用多钨酸盐溶液; 通过该方法获得的半导体单壁碳纳米管; 以及使用这些半导体单壁碳纳米管; 以及通过该方法获得的金属单壁碳纳米管; 并使用它们。 本发明还涉及多钨酸盐，特别是多钨酸钠用于从金属单壁碳纳米管分离半导电单壁碳纳米管或将半导电单壁碳纳米管与不需要的碳质材料分离的用途， 特别是从金属单壁碳纳米管，或用于将金属单壁碳纳米管与不需要的碳质材料分离，特别是从半导电单壁碳纳米管分离。 本发明还涉及含磷酸基团的特定聚芳醚及其作为表面活性化合物的用途。

    MODIFICATION OF CARBON PARTICLES
    4.
    发明申请
    MODIFICATION OF CARBON PARTICLES 审中-公开
    碳化硅改性

    公开(公告)号：WO2016012367A1

    公开(公告)日：2016-01-28

    申请号：PCT/EP2015/066411

    申请日：2015-07-17

    Applicant: BASF SE ,  MAX-PLANCK-GESELLSCHAFT ZUR FÖRDERUNG DER WISSENSCHAFTEN E.V.

    Inventor： MUELLER, Andreas ,  SCHWAB, Matthias Georg ,  MUELLEN, Klaus ,  SACHDEV, Hermann

    IPC: C01B31/02 ,  C01B31/04 ,  C09C1/56 ,  B01J19/08

    CPC classification number: B01J19/088 ,  B01J8/42 ,  B01J2208/00672 ,  C01B32/152 ,  C01B32/168 ,  C01B32/174 ,  C01B32/194 ,  C01B32/20 ,  C01B32/225 ,  C01P2006/12 ,  C09C1/565

    Abstract: The present invention relates to a process for modifying carbon particles, such as graphites, graphene nanoplatelets, carbon black and other carbons, and to modified carbon particles obtainable by such a process. The process for modifying carbon particles is performed within an apparatus which comprises a sample holder located below a reactive zone and comprises the following steps: a) provision of carbon particles on the sample holder of apparatus, b) fluidizing the carbon particles in apparatus with a gaseous stream into the reactive zone, c) keeping the carbon particles with the gaseous stream in the reactive zone for at least 1 sec and feeding energy of at least 2.4 kj into the reactive zone, and d) modification of the carbon particles in the reactive zone to obtain modified carbon particles. It is preferred that the carbon particles are modified by a fluidized bed plasma process.

    Abstract translation: 本发明涉及用于改性碳颗粒如石墨，石墨烯纳米片，炭黑和其他碳的方法，以及可通过这种方法获得的改性碳颗粒。 用于改性碳颗粒的方法在包括位于反应性区域下方的样品架的设备中进行，并且包括以下步骤：a）在设备的样品架上提供碳颗粒，b）在设备中将碳颗粒流化为 气态物流进入反应区，c）将碳颗粒与气态物流保持在​​反应区中至少1秒，并将至少2.4kj的能量送入反应区，以及d）改变反应性区域中的碳颗粒 区以获得改性碳颗粒。 优选通过流化床等离子体工艺来改变碳颗粒。

    PROCESS FOR PRODUCING AN ELECTRODE CONTAINING SILICON PARTICLES COATED WITH CARBON
    7.
    发明申请
    PROCESS FOR PRODUCING AN ELECTRODE CONTAINING SILICON PARTICLES COATED WITH CARBON 审中-公开
    生产含有碳化硅的电极的电极的方法

    公开(公告)号：WO2016091957A1

    公开(公告)日：2016-06-16

    申请号：PCT/EP2015/079137

    申请日：2015-12-09

    Applicant: BASF SE ,  MAX-PLANCK-GESELLSCHAFT ZUR FÖRDERUNG DER WISSENSCHAFTEN E.V.

    Inventor： MUELLER, Andreas ,  SCHWAB, Matthias Georg ,  ZHONG, Mingjie ,  VENKATARAMAN, Shyam Sundar ,  MÜLLEN, Klaus ,  SACHDEV, Hermann ,  BINDER, Axel

    IPC: H01M4/134 ,  H01M4/1395 ,  H01M4/36 ,  H01M4/38 ,  H01M4/587 ,  H01M4/62 ,  H01M10/052

    CPC classification number: H01M4/386 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/364 ,  H01M4/366 ,  H01M4/587 ,  H01M4/625 ,  H01M10/052

    Abstract: The present invention relates to a process for producing an electrode containing silicon particles which are coated with carbon (SP2). The respective process is carried out under plasma conditions in combination with a fluidized bed process since silicon particles (SP1) to be coated with carbon are fluidized into the reactive zone of an apparatus (A), employing a gaseous stream (G) containing at least one carbon- containing gas. The coating of the silicon particles (SP1) in the reactive zone (RZ) of apparatus (A) is preferably carried out via a chemical vapor deposition (CVD) process. The silicon particles coated with carbon (SP2) as obtained in process step d) of the present invention are further processed in order to obtain an electrode containing such silicon particles coated with carbon (SP2). The present invention further relates to such an electrode as well as to a battery containing such an electrode. The present invention also relates to the use of such an electrode containing silicon particles coated with carbon (SP2) within such a battery which preferably is a lithium-ion-battery.

    Abstract translation: 本发明涉及一种用碳（SP2）涂覆含有硅颗粒的电极的方法。 相应的方法在等离子体条件下与流化床方法组合进行，因为待涂覆的硅颗粒（SP1）被流化成装置（A）的反应区，使用至少含有的气流（G） 一个含碳气体。 装置（A）的反应性区（RZ）中的硅颗粒（SP1）的涂层优选通过化学气相沉积（CVD）工艺进行。 进一步对本发明方法步骤d）中得到的涂有碳（SP2）的硅颗粒进行处理以获得含有涂覆有碳的硅颗粒（SP2）的电极。 本发明还涉及这种电极以及包含这种电极的电池。 本发明还涉及在这样的电池中使用这种包含碳（SP2）的硅颗粒的电极，其优选为锂离子电池。

    PROCESS FOR MODIFICATION OF PARTICLES
    8.
    发明申请
    PROCESS FOR MODIFICATION OF PARTICLES 审中-公开
    颗粒改性方法

    公开(公告)号：WO2016012365A1

    公开(公告)日：2016-01-28

    申请号：PCT/EP2015/066409

    申请日：2015-07-17

    Applicant: BASF SE ,  MAX-PLANCK-GESELLSCHAFT ZUR FÖRDERUNG DER WISSENSCHAFTEN E.V.

    Inventor： MUELLER, Andreas ,  SCHWAB, Matthias Georg ,  MUELLEN, Klaus ,  SACHDEV, Hermann

    IPC: B01J8/16 ,  B01J8/40 ,  B01J8/42 ,  B01J8/00 ,  C01B31/04

    CPC classification number: B01J8/006 ,  B01J8/003 ,  B01J8/0055 ,  B01J8/16 ,  B01J8/40 ,  B01J8/42 ,  B01J2208/00442 ,  B01J2208/00469 ,  B01J2208/00902 ,  B01J2208/00929 ,  C01B32/225

    Abstract: The present invention relates to a process for modifying particles. The object is achieved by a process for modifying particles (P1) within an apparatus (Al) which comprises at least two inlets for gaseous streams (Gl) and (G2), a gas inlet zone (IZ), a reactive zone (RZ) located below the gas inlet zone (IZ), a sample holder (SH) located below the reactive zone (RZ) and an outlet (01) located at the bottom of (Al), wherein the process comprises feeding at least one pulse of a gaseous stream (G2), comprising at least one inert gas and/or reactive gas, to carry particles (P1) into the reactive zone (RZ). This pulse of a gaseous stream (G2) is fed into apparatus (Al) at a position below the sample holder (SH).

    Abstract translation: 本发明涉及一种改性颗粒的方法。 该目的通过一种用于改变装置（A1）内的颗粒（P1）的方法来实现，该方法包括用于气流（G1）和（G2）的至少两个入口，气体入口区（IZ），反应区（RZ） 位于气体入口区（IZ）下方的位于反应区（RZ）下方的样品保持器（SH）和位于（A1）底部的出口（01），其中所述方法包括将至少一个脉冲 包含至少一种惰性气体和/或反应性气体的气流（G2）将颗粒（P1）运送到反应区（RZ）中。 气体流（G2）的脉冲在样品保持器（SH）下方的位置被送入设备（A1）。

    AMINE PRECURSORS FOR DEPOSITING GRAPHENE
    9.
    发明申请
    AMINE PRECURSORS FOR DEPOSITING GRAPHENE 审中-公开
    用于沉积石墨的胺前体

    公开(公告)号：WO2015049624A1

    公开(公告)日：2015-04-09

    申请号：PCT/IB2014/064919

    申请日：2014-09-29

    Applicant: BASF SE ,  BASF (CHINA) COMPANY LIMITED ,  MAX-PLANCK-GESELLSCHAFT ZUR FÖRDERUNG DER WISSENSCHAFTEN E.V.

    Inventor： SCHWAB, Matthias Georg ,  MÜLLEN, Klaus ,  SACHDEV, Hermann ,  ITO, Yoshikazu

    IPC: C07C211/03 ,  C07C211/08 ,  C07C211/09 ,  C23C16/36 ,  C01B31/04

    CPC classification number: H01L51/0002 ,  C01B32/186 ,  C23C16/26 ,  C23C16/30 ,  H01L51/002 ,  H01L51/003 ,  H01L51/0045 ,  H01L51/0558 ,  H01L51/42 ,  H01L51/50

    Abstract: The present invention relates to the use of an amine precursor of formula I (X 1 -R 1 ) n -NH (3-n) (I) or its ammonium salts for depositing a graphene film having a nitrogen content of from 0 to 65% by weight on a substrate S1 by chemical vapor deposition (CVD), wherein R 1 is selected from (a) C 1 to C 10 alkanediyl, which may all optionally be interrupted by at least one of O, NH and NR 2 , (b) alkenediyl, which may all optionally be interrupted by at least one of O, NH and NR 2 , (c) alkynediyl, which may all optionally be interrupted by at least one of O, NH and NR 2 , (d) C 6 to C 20 aromatic divalent moiety, and (e) CO and CH 2 CO, X 1 is selected from H, OH, OR 2 , NH 2 , NHR 2 , or NR 2 2 , wherein two groups X 1 may together form a bivalent group X 2 being selected from a chemical bond, O, NH, or NR 2 , R 2 is selected from C 1 to C 10 alkyl and a C 6 to C 20 aromatic moiety which may optionally be substituted by one or more substituents X 1 , n is 1, 2, or 3.

    Abstract translation: 本发明涉及式I（X 1 -R 1）n -NH（3-n）（I）的胺前体或其铵盐用于通过以下方式沉积氮含量为0至65％的石墨烯膜的用途： 通过化学气相沉积（CVD）在基底S1上的重量，其中R1选自（a）C1至C10链烷二基，其可全部任选地被O，NH和NR2中的至少一个中断，（b）亚烯二基，其可以 全部可选地被O，NH和NR2中的至少一个中断，（c）炔二基，其全部可选地被O，NH和NR2，（d）C6〜C20芳族二价部分中的至少一个中断，（e ）CO和CH 2 CO，X 1选自H，OH，OR 2，NH 2，NHR 2或NR 2 2，其中两个基团X 1可以一起形成二价基团X 2，其选自化学键，O，NH或NR 2，R 2 选自C1至C10烷基和可任选被一个或多个取代基X1取代的C 6至C 20芳族部分，n为1,2或3。

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