公开(公告)号：EP2440958A4

公开(公告)日：2014-08-27

申请号：EP10786926

申请日：2010-06-11

Applicant: BINOPTICS CORP

Inventor： BEHFAR ALEX ,  STAGARESCU CRISTIAN

IPC: G02B6/10 ,  G02B6/42 ,  H01S5/022 ,  H01S5/026 ,  H01S5/028 ,  H01S5/065 ,  H01S5/10 ,  H01S5/125 ,  H01S5/18 ,  H01S5/22 ,  H01S5/40

CPC classification number: H01S5/18 ,  G02B6/4214 ,  H01S5/02284 ,  H01S5/0264 ,  H01S5/028 ,  H01S5/0654 ,  H01S5/1085 ,  H01S5/125 ,  H01S5/22 ,  H01S5/4031 ,  H01S5/4087 ,  H01S2301/18

公开(公告)号：EP2789060A4

公开(公告)日：2015-11-11

申请号：EP12855851

申请日：2012-12-03

Applicant: BINOPTICS CORP

Inventor： BEHFAR ALEX A ,  GREEN MALCOLM R ,  STAGARESCU CRISTIAN

IPC: H01S5/00 ,  G01R31/26 ,  H01S5/02 ,  H01S5/028 ,  H01S5/22

CPC classification number: H01S5/0014 ,  G01R31/26 ,  G01R31/2635 ,  H01S5/0042 ,  H01S5/0201 ,  H01S5/0203 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/1014 ,  H01S5/12 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/34306 ,  H01S5/34313 ,  H01S5/34333

Abstract: A laser chip having a substrate, an epitaxial structure on the substrate, the epitaxial structure including an active region and the active region generating light, a waveguide formed in the epitaxial structure extending in a first direction, the waveguide having a front etched facet and a back etched facet that define an edge-emitting laser, and a first recessed region formed in said epitaxial structure, the first recessed region being arranged at a distance from the waveguide and having an opening adjacent to the back etched facet, the first recessed region facilitating testing of an adjacent laser chip prior to singulation of the laser chip.

公开(公告)号：EP2188875A4

公开(公告)日：2014-07-30

申请号：EP08830477

申请日：2008-09-11

Applicant: BINOPTICS CORP

Inventor： BEHFAR ALEX A ,  KWONG NORMAN S ,  GREEN MALCOLM ,  STAGARESCU CRISTIAN

IPC: H01S5/12 ,  H01S5/028 ,  H01S5/10 ,  H01S5/18 ,  H01S5/40

CPC classification number: H01S5/12 ,  H01S5/028 ,  H01S5/1021 ,  H01S5/1039 ,  H01S5/18 ,  H01S5/4025

Abstract: A semiconductor chip has at least two DFB etched facet laser cavities with one set of facets with AR coatings and a second set of etched facets with HR coatings that have a different relative position with respect to the gratings. This creates a difference in the phase between each of the etched facets and the gratings which changes the operational characteristics of the two laser cavities such that at least one of the lasers provides acceptable performance. As a result, the two cavity arrangement greatly improves the yield of the fabricated chips.

Abstract translation: 半导体芯片具有至少两个具有AR涂层的DFB蚀刻小面激光腔，其具有一组具有AR涂层的刻面，以及具有HR涂层的第二组蚀刻刻面，其具有相对于光栅的不同相对位置。 这产生了每个蚀刻面和光栅之间的相位的差异，其改变了两个激光腔的操作特性，使得至少一个激光器提供可接受的性能。 结果，两个腔体结构大大提高了所制造的芯片的产量。