公开(公告)号：WO2005072224A3

公开(公告)日：2005-10-20

申请号：PCT/US2005001783

申请日：2005-01-19

Applicant: BINOPTICS CORP ,  BEHFAR ALEX A ,  GREEN MALCOLM R ,  SCHREMER ALFRED T

Inventor： BEHFAR ALEX A ,  GREEN MALCOLM R ,  SCHREMER ALFRED T

IPC: H01L21/00 ,  H01S5/00 ,  H01S5/026 ,  H01S5/10 ,  H01S5/18 ,  H01S5/40

CPC classification number: H01S5/0264 ,  H01S5/005 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/02292 ,  H01S5/0262 ,  H01S5/0683 ,  H01S5/1085 ,  H01S5/18 ,  H01S5/2022 ,  H01S5/4012 ,  H01S5/4056 ,  H01S5/4087

Abstract: Abstract of the Disclosure A laser (22) and detector (24) integrated on corresponding epitaxial layers of a single chip (20) cooperate with on-chip and/or external optics (62) to couple light of a first wavelength emitted by the laser to a single external device such as an optical fiber (60) and to simultaneously couple light of a different wavelength received from the external device to the detector to provide bidirectional photonic operation. Multiple lasers and detectors may be integrated on the chip to provide multiple bidirectional channels.

Abstract translation: 发明内容集成在单个芯片（20）的相应外延层上的激光器（22）和检测器（24）与片上和/或外部光学器件（62）配合以耦合由激光器发射的第一波长的光 耦合到诸如光纤（60）的单个外部设备，并且将从外部设备接收的不同波长的光同时耦合到检测器以提供双向光子操作。 多个激光器和检测器可以集成在芯片上以提供多个双向通道。

公开(公告)号：WO2005107026A3

公开(公告)日：2007-03-01

申请号：PCT/US2005012413

申请日：2005-04-14

Applicant: BINOPTICS CORP ,  BEHFAR ALEX A ,  GREEN MALCOLM R ,  SCHREMER ALFRED T

Inventor： BEHFAR ALEX A ,  GREEN MALCOLM R ,  SCHREMER ALFRED T

IPC: H01S5/00 ,  G02B6/12 ,  G02B6/122 ,  G02B6/13 ,  G02F1/017 ,  H01S5/026 ,  H01S5/028 ,  H01S5/0683 ,  H01S5/10 ,  H01S5/22 ,  H01S5/343

CPC classification number: B82Y20/00 ,  G02B6/12002 ,  G02B6/12004 ,  G02B6/122 ,  G02B6/131 ,  G02B2006/12104 ,  G02F1/01708 ,  G02F2202/102 ,  H01S5/005 ,  H01S5/0071 ,  H01S5/026 ,  H01S5/0265 ,  H01S5/028 ,  H01S5/0683 ,  H01S5/1014 ,  H01S5/1017 ,  H01S5/1021 ,  H01S5/1032 ,  H01S5/22 ,  H01S5/34306

Abstract: A laser (40) and electroabsorption modulator (EAM) (44) are monolithically integrated through an etched facet process. Epitaxial layers on a wafer include a first layer for a laser structure and a second layer for an EAM structure (44). Strong optical coupling between the laser and the EAM (44) is realized by using two 45-degree turning mirrors (52 and 66) to route light vertically from the laser waveguide to the EAM waveguide (44). A directional angled etch process is used to form the two angled facets.

Abstract translation: 激光器（40）和电吸收调制器（EAM）（44）通过蚀刻小面工艺单片集成。 晶片上的外延层包括用于激光结构的第一层和用于EAM结构（44）的第二层。 通过使用两个45度旋转镜（52和66）将光从激光波导垂直地路由到EAM波导（44）来实现激光器和EAM（44）之间的强耦合。 使用定向角蚀刻工艺来形成两个成角度的小平面。

公开(公告)号：DE602005024674D1

公开(公告)日：2010-12-23

申请号：DE602005024674

申请日：2005-04-14

Applicant: BINOPTICS CORP

Inventor： BEHFAR ALEX A ,  GREEN MALCOLM R ,  SCHREMER ALFRED T

IPC: H01S5/00 ,  G02B6/12 ,  G02B6/122 ,  G02B6/13 ,  G02F1/017 ,  H01S5/026 ,  H01S5/028 ,  H01S5/0683 ,  H01S5/10 ,  H01S5/22 ,  H01S5/343

公开(公告)号：WO2007081549A3

公开(公告)日：2008-04-10

申请号：PCT/US2006049181

申请日：2006-12-26

Applicant: BINOPTICS CORP ,  BEHFAR ALEX A ,  GREEN MALCOLM R ,  SCHREMER ALFRED T

Inventor： BEHFAR ALEX A ,  GREEN MALCOLM R ,  SCHREMER ALFRED T

IPC: H01S5/00 ,  H01L21/00 ,  H01S5/026 ,  H01S5/10 ,  H01S5/18 ,  H01S5/40

CPC classification number: H01S5/0262 ,  G02B6/4214 ,  G02B6/4246 ,  H01L31/03046 ,  H01L31/105 ,  H01L31/107 ,  H01L31/153 ,  H01L31/1844 ,  H01S5/005 ,  H01S5/0078 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/026 ,  H01S5/0264 ,  H01S5/0267 ,  H01S5/1085 ,  H01S5/18 ,  H01S5/2022 ,  H01S5/4012 ,  H01S5/4056 ,  Y02E10/544

Abstract: A laser and detector integrated on corresponding epitaxial layers of a single chip cooperate with on-chip and/or external optics to couple light of a first wavelength emitted by the laser to a single external device such as an optical fiber and to simultaneously couple light of a different wavelength received from the external device to the detector to provide bidirectional photonic operation. Multiple lasers and detectors may be integrated on the chip to provide multiple bidirectional channels. A monitoring photodetector is fabricated in the detector epitaxy adjacent one end of the laser.

Abstract translation: 集成在单个芯片的相应外延层上的激光和检测器与片上和/或外部光学器件配合，将由激光器发射的第一波长的光耦合到单个外部设备（例如光纤），并同时耦合光 从外部设备接收到不同波长的检测器以提供双向光子操作。 多个激光器和检测器可以集成在芯片上以提供多个双向通道。 在邻近激光器一端的检测器外延中制造监测光电检测器。

公开(公告)号：EP1735884A4

公开(公告)日：2008-05-14

申请号：EP05744345

申请日：2005-04-14

Applicant: BINOPTICS CORP

Inventor： BEHFAR ALEX A ,  GREEN MALCOLM R ,  SCHREMER ALFRED T

IPC: H01S5/00 ,  G02B6/12 ,  G02B6/122 ,  G02B6/13 ,  G02F1/017 ,  H01S5/026 ,  H01S5/028 ,  H01S5/0683 ,  H01S5/10 ,  H01S5/22 ,  H01S5/343

CPC classification number: B82Y20/00 ,  G02B6/12002 ,  G02B6/12004 ,  G02B6/122 ,  G02B6/131 ,  G02B2006/12104 ,  G02F1/01708 ,  G02F2202/102 ,  H01S5/005 ,  H01S5/0071 ,  H01S5/026 ,  H01S5/0265 ,  H01S5/028 ,  H01S5/0683 ,  H01S5/1014 ,  H01S5/1017 ,  H01S5/1021 ,  H01S5/1032 ,  H01S5/22 ,  H01S5/34306

Abstract: A laser (40) and electroabsorption modulator (EAM) (44) are monolithically integrated through an etched facet process. Epitaxial layers on a wafer include a first layer for a laser structure and a second layer for an EAM structure (44). Strong optical coupling between the laser and the EAM (44) is realized by using two 45-degree turning mirrors (52 and 66) to route light vertically from the laser waveguide to the EAM waveguide (44). A directional angled etch process is used to form the two angled facets.

公开(公告)号：EP2789060A4

公开(公告)日：2015-11-11

申请号：EP12855851

申请日：2012-12-03

Applicant: BINOPTICS CORP

Inventor： BEHFAR ALEX A ,  GREEN MALCOLM R ,  STAGARESCU CRISTIAN

IPC: H01S5/00 ,  G01R31/26 ,  H01S5/02 ,  H01S5/028 ,  H01S5/22

CPC classification number: H01S5/0014 ,  G01R31/26 ,  G01R31/2635 ,  H01S5/0042 ,  H01S5/0201 ,  H01S5/0203 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/1014 ,  H01S5/12 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/34306 ,  H01S5/34313 ,  H01S5/34333

Abstract: A laser chip having a substrate, an epitaxial structure on the substrate, the epitaxial structure including an active region and the active region generating light, a waveguide formed in the epitaxial structure extending in a first direction, the waveguide having a front etched facet and a back etched facet that define an edge-emitting laser, and a first recessed region formed in said epitaxial structure, the first recessed region being arranged at a distance from the waveguide and having an opening adjacent to the back etched facet, the first recessed region facilitating testing of an adjacent laser chip prior to singulation of the laser chip.

公开(公告)号：EP1979999A4

公开(公告)日：2010-11-03

申请号：EP06849249

申请日：2006-12-26

Applicant: BINOPTICS CORP

Inventor： BEHFAR ALEX A ,  GREEN MALCOLM R ,  SCHREMER ALFRED T

IPC: H01S5/026 ,  H01L21/00 ,  H01S5/00 ,  H01S5/10 ,  H01S5/18 ,  H01S5/40

CPC classification number: H01S5/0262 ,  G02B6/4214 ,  G02B6/4246 ,  H01L31/03046 ,  H01L31/105 ,  H01L31/107 ,  H01L31/153 ,  H01L31/1844 ,  H01S5/005 ,  H01S5/0078 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/026 ,  H01S5/0264 ,  H01S5/0267 ,  H01S5/1085 ,  H01S5/18 ,  H01S5/2022 ,  H01S5/4012 ,  H01S5/4056 ,  Y02E10/544

公开(公告)号：EP1706894A4

公开(公告)日：2010-03-17

申请号：EP05705938

申请日：2005-01-19

Applicant: BINOPTICS CORP

Inventor： BEHFAR ALEX A ,  GREEN MALCOLM R ,  SCHREMER ALFRED T

IPC: H01S5/026 ,  H01L21/00 ,  H01S5/00 ,  H01S5/10 ,  H01S5/18 ,  H01S5/40

CPC classification number: H01S5/0264 ,  H01S5/005 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/02292 ,  H01S5/0262 ,  H01S5/0683 ,  H01S5/1085 ,  H01S5/18 ,  H01S5/2022 ,  H01S5/4012 ,  H01S5/4056 ,  H01S5/4087