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公开(公告)号：AT541240T
公开(公告)日：2012-01-15
申请号：AT08730646
申请日：2008-02-25
Applicant: BREWER SCIENCE INC
Inventor： ZHONG XING-FU , FLAIM TONY , MALHOTRA JYOTI
IPC: G03F7/004
Abstract: New photoresists for use during the production of semiconductor and MEMS devices are provided. The primer layer preferably comprises a silane dissolved or dispersed in a solvent system. The photoresist layer includes a first polymer prepared from a styrene and an acrylonitrile, and a second polymer comprising epoxy-containing monomers (and preferably phenolic-containing monomers). The photoresist layer comprises a photoacid generator, and is preferably negative-acting.
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2.发明公开ALKALINE-RESISTANT NEGATIVE PHOTORESIST FOR SILICON WET-ETCH WITHOUT SILICON NITRIDE 有权ALKALIBESTÄNDIGERNEGATIV-PHOTORESISTFÜRSILISIUM-NASSÄTZUNGOHNE SILIZIUMNITRID
公开(公告)号：EP2142960A4
公开(公告)日：2010-11-10
申请号：EP08730646
申请日：2008-02-25
Applicant: BREWER SCIENCE INC
Inventor： ZHONG XING-FU , FLAIM TONY D , MALHOTRA JYOTI
IPC: G03F7/004
CPC classification number: G03F7/0752 , G03F7/0045 , G03F7/0382 , G03F7/0751 , Y10S430/108 , Y10S430/115
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