-
公开(公告)号:AU5433890A
公开(公告)日:1990-11-05
申请号:AU5433890
申请日:1990-03-30
Applicant: BREWER SCIENCE INC
Inventor: BREWER TERRY , FLAIM TONY , LAMB JAMES E III , BARNES GREGG A
-
公开(公告)号:AT523263T
公开(公告)日:2011-09-15
申请号:AT05705442
申请日:2005-01-07
Applicant: BREWER SCIENCE INC
Inventor: LI CHENGHONG , RUBEN KIMBERLY , FLAIM TONY
IPC: B05D1/36 , B32B9/04 , B81C1/00 , C09D125/12 , H01L21/308 , H01L21/311
Abstract: New protective coating layers for use in wet etch processes during the production of semiconductor and MEMS devices are provided. The layers include a primer layer, a first protective layer, and an optional second protective layer. The primer layer preferably comprises an organo silane compound in a solvent system. The first protective layer includes thermoplastic copolymers prepared from styrene, acrylonitrile, and optionally other addition-polymerizable monomers such as (meth)acrylate monomers, vinylbenzyl chloride, and diesters of maleic acid or fumaric acid. The second protective layer comprises a highly halogenated polymer such as a chlorinated polymer which may or may not be crosslinked upon heating.
-
3.
公开(公告)号:AU4646189A
公开(公告)日:1990-05-28
申请号:AU4646189
申请日:1989-11-07
Applicant: BREWER SCIENCE INC
Inventor: BREWER TERRY , MOSS MARY , CUZMAR RUTH , HAWLEY DAN , FLAIM TONY
IPC: G03F7/039 , H01L21/312 , H01L23/532 , H01L29/00 , G03C1/60 , G03F7/26
Abstract: Positive working polyamic acid photoresist compositions are disclosed having improved high resolution upon image development and exhibiting stable photosensitivity and superior dielectric performance. The compositions comprise polyamic acid condensation products of an aromatic dianhydride and an aromatic di-primary amine wherein a percentage of the diamine comprises special dissolution inhibiting monomers. The compositions may be further improved by the presence of particular supplemental additives.
-
公开(公告)号:AT541240T
公开(公告)日:2012-01-15
申请号:AT08730646
申请日:2008-02-25
Applicant: BREWER SCIENCE INC
Inventor: ZHONG XING-FU , FLAIM TONY , MALHOTRA JYOTI
IPC: G03F7/004
Abstract: New photoresists for use during the production of semiconductor and MEMS devices are provided. The primer layer preferably comprises a silane dissolved or dispersed in a solvent system. The photoresist layer includes a first polymer prepared from a styrene and an acrylonitrile, and a second polymer comprising epoxy-containing monomers (and preferably phenolic-containing monomers). The photoresist layer comprises a photoacid generator, and is preferably negative-acting.
-
-
-