AMINE-ARRESTING ADDITIVES FOR MATERIALS USED IN PHOTOLITHOGRAPHIC PROCESSES
    2.
    发明申请
    AMINE-ARRESTING ADDITIVES FOR MATERIALS USED IN PHOTOLITHOGRAPHIC PROCESSES 审中-公开
    在光刻胶工艺中使用的材料的胺添加剂

    公开(公告)号:WO2008118634A3

    公开(公告)日:2009-02-26

    申请号:PCT/US2008056536

    申请日:2008-03-11

    Inventor: WEIMER MARC W

    Abstract: Novel, poison-blocking compositions and methods of using those compositions to form poison-blocking layers are provided. The compositions comprise a typical composition used in micralithographic processes, but with a poison-blocking additive included in that composition. The preferred additive is a compound comprising one or more blocked isocyanates. Upon heating to certain temperatures, the blocking group is released from the isocyanatc, leaving behind a moiety that is highly reactive with the poisonous amines generated by typical dielectric layers.

    Abstract translation: 提供了新的毒物阻断组合物和使用这些组合物形成毒物阻断层的方法。 该组合物包含用于微拉伸工艺中的典型组合物,但该组合物中包含毒物阻断添加剂。 优选的添加剂是包含一种或多种封端的异氰酸酯的化合物。 加热到一定温度后,封闭基团从异氰酸酯中释放,留下与典型电介质层产生的有毒胺高度反应的部分。

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