公开(公告)号：EP4380330A1

公开(公告)日：2024-06-05

申请号：EP22955194.0

申请日：2022-12-07

Applicant: Beijing Superstring Academy of Memory Technology

Inventor： DAI, Jin ,  YU, Yong ,  LIANG, Jing

IPC: H10B12/00

Abstract: The present disclosure provides a memory cell, a 3D memory and a preparation thereof, and an electronic device, and relates to the technical field of semiconductor technology. The memory cell includes a first transistor and a second transistor disposed on a substrate (1), the first transistor includes a first gate (11), a first electrode (33), a second electrode (34) and a first semiconductor layer (6) disposed on the substrate; the second transistor includes a third electrode (51) , a fourth electrode (52), a second gate (12) extending in a direction perpendicular to the substrate (1) and a second semiconductor layer (9) surrounding a sidewall of the second gate (12) which are disposed on the substrate (1), the second semiconductor layer (9) includes a second source contact region (91) and a second drain contact region (92) arranged at intervals, a channel between the second source contact region (91) and the second drain contact region (92) is a horizontal channel.

公开(公告)号：EP4380329A1

公开(公告)日：2024-06-05

申请号：EP22955193.2

申请日：2022-12-07

Applicant: Beijing Superstring Academy of Memory Technology

Inventor： DAI, Jin ,  YU, Yong ,  LIANG, Jing

IPC: H10B12/00 ,  H01L29/786

Abstract: A transistor, a 3D memory and a manufacturing method therefor, and an electronic device are provided in the present application. The 3D memory includes a plurality of layers of memory cells stacked in a direction perpendicular to a substrate (1), and a word line (110). A memory cell includes a transistor which includes a source (51) and a drain (52), a gate (11) extending in the direction perpendicular to the substrate (1), a semiconductor layer (9) surrounding a sidewall of the gate (11). The semiconductor layer (9) includes a source contact region and a drain contact region arranged at intervals. A channel between the source contact region and the drain contact region is a horizontal channel, and the word line (110) extends in the direction perpendicular to the substrate (1) and penetrates through the memory cells of different layers.