公开(公告)号：WO2014007892A3

公开(公告)日：2014-03-27

申请号：PCT/US2013034315

申请日：2013-03-28

Applicant: CALIFORNIA INST OF TECHN

Inventor： RAJAGOPAL ADITYA ,  SCHERER AXEL ,  HENRY MICHAEL D ,  WALAVALKAR SAMEER ,  TOMBRELLO THOMAS ,  HOMYK ANDREW P

IPC: H01L21/336 ,  H01L29/78

CPC classification number: C12Q1/02 ,  A61B5/04001 ,  G01N27/3275 ,  G01N27/4146 ,  G01R1/06711 ,  G01R1/07342 ,  H01L29/413 ,  H01L29/42376 ,  H01L29/4966 ,  H01L29/66477 ,  H01L29/78 ,  H01L29/7831

Abstract: A field effect nano-pillar transistor has a pillar shaped gate element incorporating a biomimitec portion that provides various advantages over prior art devices. The small size of the nano-pillar transistor allows for advantageous insertion into cellular membranes, and the biomimitec character of the gate element operates as an advantageous interface for sensing small amplitude voltages such as transmembrane cell potentials. The nano-pillar transistor can be used in various embodiments to stimulate cells, to measure cell response, or to perform a combination of both actions.

Abstract translation: 场效应纳米柱晶体管具有结合有生物医学部分的柱形门元件，其提供了优于现有技术器件的各种优点。 纳米柱晶体管的小尺寸允许有利地插入到细胞膜中，并且栅极元件的生物学特性作为用于感测小幅度电压（例如跨膜电池电位）的有利接口。 纳米柱晶体管可用于各种实施例中以刺激细胞，测量细胞反应或执行两种动作的组合。