公开(公告)号：WO2010151604A3

公开(公告)日：2011-04-21

申请号：PCT/US2010039702

申请日：2010-06-23

Applicant: CALIFORNIA INST OF TECHN ,  SCHERER AXEL ,  WALAVALKAR SAMEER ,  HENRY MICHAEL D ,  HOMYK ANDREW P

Inventor： SCHERER AXEL ,  WALAVALKAR SAMEER ,  HENRY MICHAEL D ,  HOMYK ANDREW P

IPC: H01L21/336 ,  H01L29/78

CPC classification number: H01L29/0665 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/0676 ,  H01L29/413 ,  H01L29/66439 ,  H01L29/66666 ,  H01L29/775 ,  H01L29/7827 ,  H01L33/18 ,  Y10S977/762

Abstract: Methods for fabricating passivated silicon nanowires and an electronic arrangement thus obtained are described. Such arrangements may comprise a metal-oxide-semiconductor (MOS) structure such that the arrangements may be utilized for MOS field-effect transistors (MOSFETs) or opto-electronic switches.

Abstract translation: 描述了制造钝化硅纳米线的方法和由此获得的电子布置。 这种布置可以包括金属氧化物半导体（MOS）结构，使得这些布置可以用于MOS场效应晶体管（MOSFET）或光电开关。

公开(公告)号：EP2502264A4

公开(公告)日：2015-09-16

申请号：EP10832213

申请日：2010-11-18

Applicant: CALIFORNIA INST OF TECHN

Inventor： HOMYK ANDREW P ,  HENRY MICHAEL D ,  SCHERER AXEL ,  WALAVALKAR SAMEER

IPC: H01L29/775 ,  B82Y40/00 ,  H01L21/336 ,  H01L29/06 ,  H01L29/12 ,  H01L29/41 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L31/035227 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02521 ,  H01L21/0259 ,  H01L21/02639 ,  H01L29/0665 ,  H01L29/0676 ,  H01L29/127 ,  H01L29/267 ,  H01L29/413 ,  H01L29/66439 ,  H01L29/775 ,  H01L33/06 ,  Y10S977/762

公开(公告)号：WO2014007892A3

公开(公告)日：2014-03-27

申请号：PCT/US2013034315

申请日：2013-03-28

Applicant: CALIFORNIA INST OF TECHN

Inventor： RAJAGOPAL ADITYA ,  SCHERER AXEL ,  HENRY MICHAEL D ,  WALAVALKAR SAMEER ,  TOMBRELLO THOMAS ,  HOMYK ANDREW P

IPC: H01L21/336 ,  H01L29/78

CPC classification number: C12Q1/02 ,  A61B5/04001 ,  G01N27/3275 ,  G01N27/4146 ,  G01R1/06711 ,  G01R1/07342 ,  H01L29/413 ,  H01L29/42376 ,  H01L29/4966 ,  H01L29/66477 ,  H01L29/78 ,  H01L29/7831

Abstract: A field effect nano-pillar transistor has a pillar shaped gate element incorporating a biomimitec portion that provides various advantages over prior art devices. The small size of the nano-pillar transistor allows for advantageous insertion into cellular membranes, and the biomimitec character of the gate element operates as an advantageous interface for sensing small amplitude voltages such as transmembrane cell potentials. The nano-pillar transistor can be used in various embodiments to stimulate cells, to measure cell response, or to perform a combination of both actions.

Abstract translation: 场效应纳米柱晶体管具有结合有生物医学部分的柱形门元件，其提供了优于现有技术器件的各种优点。 纳米柱晶体管的小尺寸允许有利地插入到细胞膜中，并且栅极元件的生物学特性作为用于感测小幅度电压（例如跨膜电池电位）的有利接口。 纳米柱晶体管可用于各种实施例中以刺激细胞，测量细胞反应或执行两种动作的组合。

公开(公告)号：WO2010099220A3

公开(公告)日：2010-12-29

申请号：PCT/US2010025261

申请日：2010-02-24

Applicant: CALIFORNIA INST OF TECHN ,  HENRY MICHAEL D ,  HOMYK ANDREW P ,  SCHERER AXEL ,  TOMBRELLO THOMAS A ,  WALAVALKAR SAMEER

Inventor： HENRY MICHAEL D ,  HOMYK ANDREW P ,  SCHERER AXEL ,  TOMBRELLO THOMAS A ,  WALAVALKAR SAMEER

IPC: H01L21/66 ,  H01L21/027

CPC classification number: B81C1/00111 ,  B01J19/0046 ,  B01J2219/00504 ,  B01J2219/00664 ,  B81B1/006 ,  B81B2203/0361 ,  B81B2207/056 ,  B81C2201/0112 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0159 ,  G01N1/405 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/3081 ,  H01L21/3086 ,  Y10T436/25375

Abstract: Methods for fabricating of high aspect ratio probes and deforming micropillars and nanopillars are described. Use of polymers in deforming nanopillars and micropillars is also described.

Abstract translation: 描述了制造高纵横比探针和变形微柱和纳米柱的方法。 还描述了聚合物在使纳米柱和微柱变形中的用途。

公开(公告)号：WO2010099216A2

公开(公告)日：2010-09-02

申请号：PCT/US2010025256

申请日：2010-02-24

Applicant: CALIFORNIA INST OF TECHN ,  HENRY MICHAEL D ,  HOMYK ANDREW P ,  SCHERER AXEL ,  WALAVALKAR SAMEER

Inventor： HENRY MICHAEL D ,  HOMYK ANDREW P ,  SCHERER AXEL ,  WALAVALKAR SAMEER

IPC: H01L21/027 ,  H01L21/3065 ,  H01L31/042

CPC classification number: B81C1/00111 ,  B01J19/0046 ,  B01J2219/00504 ,  B01J2219/00664 ,  B81B1/006 ,  B81B2203/0361 ,  B81B2207/056 ,  B81C2201/0112 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0159 ,  G01N1/405 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/3081 ,  H01L21/3086 ,  Y10T436/25375

Abstract: Methods for fabrication of high aspect ratio micropillars and nanopillars are described. Use of alumina as an etch mask for the fabrication methods is also described. The resulting micropillars and nanopillars are analyzed and a characterization of the etch mask is provided.

Abstract translation: 描述了用于制造高纵横比微柱和纳米柱的方法。 还描述了使用氧化铝作为制造方法的蚀刻掩模。 分析所得到的微柱和纳米柱，并提供蚀刻掩模的表征。

公开(公告)号：WO2014007890A3

公开(公告)日：2014-03-27

申请号：PCT/US2013034297

申请日：2013-03-28

Applicant: CALIFORNIA INST OF TECHN

Inventor： RAJAGOPAL ADITYA ,  SCHERER AXEL ,  HENRY MICHAEL D ,  WALAVALKAR SAMEER ,  TOMBRELLO THOMAS A ,  HOMYK ANDREW P

IPC: G01N27/30 ,  G01N27/403

CPC classification number: C12Q1/02 ,  A61B5/04001 ,  G01N27/3275 ,  G01N27/4146 ,  G01R1/06711 ,  G01R1/07342 ,  H01L29/413 ,  H01L29/42376 ,  H01L29/4966 ,  H01L29/66477 ,  H01L29/78 ,  H01L29/7831

Abstract: The basic structure and functionality of a probe as disclosed herein allows for flexibly incorporating into the probe, various sensing elements for various sensing applications. Two example applications among these various sensing applications include bio-sensing and chemical-sensing applications. For bio-sensing applications the probe, which is fabricated upon a silicon substrate, includes a bio-sensing element such as a nano-pillar transistor, and for chemical-sensing applications the probe includes a sensing element that has a functionalized contact area whereby the sensing element generates a voltage when exposed to one or more chemicals of interest.

Abstract translation: 本文公开的探针的基本结构和功能允许灵活地并入到探针中，用于各种感测应用的各种感测元件。 这些各种感测应用中的两个示例应用包括生物感测和化学感测应用。 对于生物感测应用，制造在硅衬底上的探针包括诸如纳米柱晶体管的生物感测元件，并且对于化学感测应用，探针包括具有功能化接触区域的感测元件， 当暴露于感兴趣的一种或多种化学品时，感测元件产生电压。

公开(公告)号：WO2011063163A3

公开(公告)日：2011-08-18

申请号：PCT/US2010057301

申请日：2010-11-18

Applicant: CALIFORNIA INST OF TECHN ,  HOMYK ANDREW P ,  HENRY MICHAEL D ,  SCHERER AXEL ,  WALAVALKAR SAMEER

Inventor： HOMYK ANDREW P ,  HENRY MICHAEL D ,  SCHERER AXEL ,  WALAVALKAR SAMEER

IPC: H01L21/336 ,  H01L29/78

CPC classification number: H01L31/035227 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02521 ,  H01L21/0259 ,  H01L21/02639 ,  H01L29/0665 ,  H01L29/0676 ,  H01L29/127 ,  H01L29/267 ,  H01L29/413 ,  H01L29/66439 ,  H01L29/775 ,  H01L33/06 ,  Y10S977/762

Abstract: Methods for fabricating self-aligned heterostructures and semiconductor arrangements using silicon nanowires are described.

Abstract translation: 描述了使用硅纳米线制造自对准异质结构和半导体装置的方法。

公开(公告)号：EP2446467A4

公开(公告)日：2014-07-02

申请号：EP10792619

申请日：2010-06-23

Applicant: CALIFORNIA INST OF TECHN

Inventor： SCHERER AXEL ,  WALAVALKAR SAMEER ,  HENRY MICHAEL D ,  HOMYK ANDREW P

IPC: H01L21/336 ,  B82Y10/00 ,  H01L29/06 ,  H01L29/41 ,  H01L29/775

CPC classification number: H01L29/0665 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/0676 ,  H01L29/413 ,  H01L29/66439 ,  H01L29/66666 ,  H01L29/775 ,  H01L29/7827 ,  H01L33/18 ,  Y10S977/762