公开(公告)号：EP0972428A4

公开(公告)日：2005-05-18

申请号：EP98907557

申请日：1998-02-27

Applicant: CANDESCENT INTELLECTUAL PROP

Inventor： BRIGHAM KRISTIN ,  PONG CHUNGDEE

IPC: H01L21/302 ,  H01J9/02 ,  H01L21/311 ,  H01L21/3213 ,  H05B33/10 ,  B29D11/00 ,  B44C1/22

CPC classification number: H01J9/025 ,  H01J2237/32 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32139

Abstract: A method is provided for etching an etch layer using a polycarbonate layer as a mask. The method includes placing an etch structure (80) in a reaction chamber (111), the etch structure including an etch layer (86) underlying a polycarbonate layer (88), the polycarbonate layer having apertures (90). The etch layer is then eteched using a low pressure-high density plasma generated at a pressure in the range of approximately 1 to 30 millitorr where the ionized particle concentration is at least 10 ions/cm and where the ionized particle concentration is substantially equal throughout the volume of the reaction chamber. To increase the etch rate, the etch structure can be heated or biased. To decrease the etch rate, an inert gas can be added to the process gas mixture used to form the plasma.