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公开(公告)号：DE69730734D1
公开(公告)日：2004-10-21
申请号：DE69730734
申请日：1997-12-22
Applicant: CANDESCENT INTELLECTUAL PROP
Inventor： SLUSARCZUK M , HAVEN A , CURTIN J , FAHLEN S
IPC: G02F1/13 , G02F1/1333 , G09F9/00 , H01J5/03 , H01J9/24 , H01J17/16 , H01J29/86 , H01J29/87 , H01J29/94 , H01J31/12 , H01J9/26 , H01J9/385 , H01J9/39
Abstract: A flat-panel device is fabricated by a process in which a pair of plate structures (40 and 42) are sealed along their interior surfaces (40A and 42B) to opposite edges (44A and 44B) of an outer wall (44) to form a compartment. Subsequently, exterior support structure (64) is attached to the exterior surface of one of the plate structures (40) to significantly increase resistance of the compartment to bending. Exterior support structure (66) is normally likewise attached to the exterior surface of the other plate structure (42) after the sealing operation. The compartment is then typically pumped down to a high vacuum through a suitable pump-out port (46) and closed. By providing the exterior support structure at such a relatively late stage in the fabrication process, the need for using spacers to support the device against external forces is eliminated or substantially reduced while simultaneously avoiding severe fabrication difficulties that arise in attaching the exterior support structure before the sealing operation.
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公开(公告)号：DE69726861D1
公开(公告)日：2004-01-29
申请号：DE69726861
申请日：1997-06-05
Applicant: CANDESCENT INTELLECTUAL PROP
Inventor： HAVEN A , SLUZKY ESTHER , MACAULAY M
Abstract: A method for creating a solid layer (36A or 52A) through which openings (38 or 54) extend entails subjecting particles (30) suspended in a fluid (26) to an electric field (EA) to cause a number of the particles to move towards, and accumulate over, a structure placed in the fluid. The structure, including the so-accumulated particles, is removed from the fluid. Solid material is deposited over the structure at least in the space between the so-accumulated particles. The particles, including any overlying material (36B or 52B), are removed. The remaining solid material forms the solid layer through which openings extend at the locations of the so-removed particles. The structure is typically a layer is then typically either a gate layer for the electron-emitting device or a layer used in forming the gate layer.\!
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公开(公告)号：DE69725430T2
公开(公告)日：2004-07-22
申请号：DE69725430
申请日：1997-03-05
Applicant: CANDESCENT INTELLECTUAL PROP
Inventor： SPINDT J , CHAKAROVA S , NIKOLOVA S , SEARSON C , HAVEN A , KNALL JOHAN , MACAULAY M , BARTON W
Abstract: An electrochemical technique is employed for removing certain material from a partially finished structure without significantly chemically attacking certain other material of the same chemical type as the removed material. The partially finished structure contains a first electrically non-insulating layer (52C) consisting at least partially of first material, typically excess emitter material that accumulates during the deposition of the emitter material to form electron-emissive elements (52A) in an electron emitter, that overlies an electrically insulating layer (44). An electrically non-insulating member, such as an electron-emissive element, consisting at least partially of the first material is situated at least partly in an opening (50) extending through the insulating layer. With the partially finished structure so arranged, at least part of the first material of the first non-insulating layer is electrochemically removed such that the non-insulating member is exposed without significantly attacking the first material of the non-insulating member.
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公开(公告)号：DE69725430D1
公开(公告)日：2003-11-13
申请号：DE69725430
申请日：1997-03-05
Applicant: CANDESCENT INTELLECTUAL PROP
Inventor： SPINDT J , CHAKAROVA S , NIKOLOVA S , SEARSON C , HAVEN A , KNALL JOHAN , MACAULAY M , BARTON W
Abstract: An electrochemical technique is employed for removing certain material from a partially finished structure without significantly chemically attacking certain other material of the same chemical type as the removed material. The partially finished structure contains a first electrically non-insulating layer (52C) consisting at least partially of first material, typically excess emitter material that accumulates during the deposition of the emitter material to form electron-emissive elements (52A) in an electron emitter, that overlies an electrically insulating layer (44). An electrically non-insulating member, such as an electron-emissive element, consisting at least partially of the first material is situated at least partly in an opening (50) extending through the insulating layer. With the partially finished structure so arranged, at least part of the first material of the first non-insulating layer is electrochemically removed such that the non-insulating member is exposed without significantly attacking the first material of the non-insulating member.
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公开(公告)号：DE69835013T2
公开(公告)日：2007-01-11
申请号：DE69835013
申请日：1998-05-26
Applicant: CANDESCENT INTELLECTUAL PROP
Abstract: An electron-emitting device utilizes an emitter electrode (12) shaped like a ladder in which a line of emitter openings (18) extend through the electrode. In fabricating the device, the emitter openings can be utilized to self-align certain edges, such as edges (38C) of a focusing system (37), to other edges, such as edges (28C) of control electrodes (28), to obtain desired lateral spacings. The self-alignment is typically achieved with the assistance of a backside photolithographic exposure operation. The ladder shape of the emitter electrode also facilitates the removal of short-circuit defects involving the electrode.
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Patent Agency Ranking
公开(公告)号：DE69730734T2
公开(公告)日：2005-09-22
申请号：DE69730734
申请日：1997-12-22
Applicant: CANDESCENT INTELLECTUAL PROP
Inventor： SLUSARCZUK M , HAVEN A , CURTIN J , FAHLEN S
IPC: G02F1/13 , G02F1/1333 , G09F9/00 , H01J5/03 , H01J9/24 , H01J17/16 , H01J29/86 , H01J29/87 , H01J29/94 , H01J31/12 , H01J9/26 , H01J9/385 , H01J9/39
Abstract: A flat-panel device is fabricated by a process in which a pair of plate structures (40 and 42) are sealed along their interior surfaces (40A and 42B) to opposite edges (44A and 44B) of an outer wall (44) to form a compartment. Subsequently, exterior support structure (64) is attached to the exterior surface of one of the plate structures (40) to significantly increase resistance of the compartment to bending. Exterior support structure (66) is normally likewise attached to the exterior surface of the other plate structure (42) after the sealing operation. The compartment is then typically pumped down to a high vacuum through a suitable pump-out port (46) and closed. By providing the exterior support structure at such a relatively late stage in the fabrication process, the need for using spacers to support the device against external forces is eliminated or substantially reduced while simultaneously avoiding severe fabrication difficulties that arise in attaching the exterior support structure before the sealing operation.
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公开(公告)号：DE69730333T2
公开(公告)日：2005-09-01
申请号：DE69730333
申请日：1997-06-05
Applicant: CANDESCENT INTELLECTUAL PROP
Inventor： LUDWIG N , HAVEN A , MACAULAY M , SPINDT J , CLEEVES M , KNALL JOHAN
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公开(公告)号：DE69730333D1
公开(公告)日：2004-09-23
申请号：DE69730333
申请日：1997-06-05
Applicant: CANDESCENT INTELLECTUAL PROP
Inventor： LUDWIG N , HAVEN A , MACAULAY M , SPINDT J , CLEEVES M , KNALL JOHAN
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公开(公告)号：DE69835013D1
公开(公告)日：2006-08-03
申请号：DE69835013
申请日：1998-05-26
Applicant: CANDESCENT INTELLECTUAL PROP
Abstract: An electron-emitting device utilizes an emitter electrode (12) shaped like a ladder in which a line of emitter openings (18) extend through the electrode. In fabricating the device, the emitter openings can be utilized to self-align certain edges, such as edges (38C) of a focusing system (37), to other edges, such as edges (28C) of control electrodes (28), to obtain desired lateral spacings. The self-alignment is typically achieved with the assistance of a backside photolithographic exposure operation. The ladder shape of the emitter electrode also facilitates the removal of short-circuit defects involving the electrode.
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公开(公告)号：DE69726861T2
公开(公告)日：2004-11-04
申请号：DE69726861
申请日：1997-06-05
Applicant: CANDESCENT INTELLECTUAL PROP
Inventor： HAVEN A , SLUZKY ESTHER , MACAULAY M
Abstract: A method for creating a solid layer (36A or 52A) through which openings (38 or 54) extend entails subjecting particles (30) suspended in a fluid (26) to an electric field (EA) to cause a number of the particles to move towards, and accumulate over, a structure placed in the fluid. The structure, including the so-accumulated particles, is removed from the fluid. Solid material is deposited over the structure at least in the space between the so-accumulated particles. The particles, including any overlying material (36B or 52B), are removed. The remaining solid material forms the solid layer through which openings extend at the locations of the so-removed particles. The structure is typically a layer is then typically either a gate layer for the electron-emitting device or a layer used in forming the gate layer.\!
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