公开(公告)号：DE69726861D1

公开(公告)日：2004-01-29

申请号：DE69726861

申请日：1997-06-05

Applicant: CANDESCENT INTELLECTUAL PROP

Inventor： HAVEN A ,  SLUZKY ESTHER ,  MACAULAY M

IPC: C25D13/02 ,  C25D13/12 ,  H01J9/02

Abstract: A method for creating a solid layer (36A or 52A) through which openings (38 or 54) extend entails subjecting particles (30) suspended in a fluid (26) to an electric field (EA) to cause a number of the particles to move towards, and accumulate over, a structure placed in the fluid. The structure, including the so-accumulated particles, is removed from the fluid. Solid material is deposited over the structure at least in the space between the so-accumulated particles. The particles, including any overlying material (36B or 52B), are removed. The remaining solid material forms the solid layer through which openings extend at the locations of the so-removed particles. The structure is typically a layer is then typically either a gate layer for the electron-emitting device or a layer used in forming the gate layer.\!

公开(公告)号：DE69726861T2

公开(公告)日：2004-11-04

申请号：DE69726861

申请日：1997-06-05

Applicant: CANDESCENT INTELLECTUAL PROP

Inventor： HAVEN A ,  SLUZKY ESTHER ,  MACAULAY M

IPC: C25D13/02 ,  C25D13/12 ,  H01J9/02

Abstract: A method for creating a solid layer (36A or 52A) through which openings (38 or 54) extend entails subjecting particles (30) suspended in a fluid (26) to an electric field (EA) to cause a number of the particles to move towards, and accumulate over, a structure placed in the fluid. The structure, including the so-accumulated particles, is removed from the fluid. Solid material is deposited over the structure at least in the space between the so-accumulated particles. The particles, including any overlying material (36B or 52B), are removed. The remaining solid material forms the solid layer through which openings extend at the locations of the so-removed particles. The structure is typically a layer is then typically either a gate layer for the electron-emitting device or a layer used in forming the gate layer.\!

公开(公告)号：EP0909347A4

公开(公告)日：2002-04-17

申请号：EP97927841

申请日：1997-06-05

Applicant: CANDESCENT INTELLECTUAL PROP

Inventor： HAVEN DUANE A ,  SLUZKY ESTHER ,  MACAULAY JOHN M

IPC: C25D13/02 ,  C25D13/12 ,  H01J9/02

CPC classification number: H01J9/025

Abstract: A method for creating a solid layer (36A or 52A) through which openings (38 or 54) extend entails subjecting particles (30) suspended in a fluid (26) to an electric field (EA) to cause a number of the particles to move towards, and accumulate over, a structure placed in the fluid. The structure, including the so-accumulated particles, is removed from the fluid. Solid material is deposited over the structure at least in the space between the so-accumulated particles. The particles, including any overlying material (36B or 52B), are removed. The remaining solid material forms the solid layer through which openings extend at the locations of the so-removed particles. The structure is typically a partially finished electron-emitting device. The solid layer is then typically either a gate layer for the electron-emitting device or a layer used in forming the gate layer.