公开(公告)号：WO1997047020A1

公开(公告)日：1997-12-11

申请号：PCT/US1997009196

申请日：1997-06-05

Applicant: CANDESCENT TECHNOLOGIES CORPORATION

Inventor： CANDESCENT TECHNOLOGIES CORPORATION ,  HAVEN, Duane, A. ,  LUDWIG, Paul, N. ,  SPINDT, Christopher, J. ,  DOBKIN, Daniel, M.

IPC: H01J01/30

CPC classification number: H01J9/025 ,  H01J2329/00

Abstract: A gated electron-emitter is fabricated by a process in which particles (26) are deposited over an insulating layer (24). Gate material is provided over the insulating layer in the space between the particles after which the particles and any overlying material are removed. The remaining gate material forms a gate layer (28A or 48A) through which gate openings (30 or 50) extend at the locations of the removed particles. When the gate material deposition is performed so that part of the gate material extends into the spaces below the particles, the gate openings are beveled. The insulating layer is etched through the gate openings to form dielectric openings (32 or 52). Electron-emissive elements (36A or 56A) are formed in the dielectric openings. This typically involves introducing emitter material through the gate openings into the dielectric openings and using a lift-off layer (34), or an electrochemical technique, to remove excess emitter material.

Abstract translation: 门控电子发射器通过其中颗粒（26）沉积在绝缘层（24）上的方法制造。 在颗粒之间的空间中的绝缘层上提供栅极材料，之后除去颗粒和任何上覆材料。 剩余的栅极材料形成栅极层（28A或48A），栅极开口（30或50）在去除的颗粒的位置处延伸通过栅极层（28A或48A）。 当进行栅极材料沉积使得栅极材料的一部分延伸到颗粒下方的空间中时，栅极开口被倒角。 通过栅极开口蚀刻绝缘层以形成电介质开口（32或52）。 在电介质开口中形成电子发射元件（36A或56A）。 这通常包括将发射体材料通过栅极开口引入电介质开口并使用剥离层（34）或电化学技术来去除多余的发射体材料。

公开(公告)号：EP1018131A1

公开(公告)日：2000-07-12

申请号：EP97926809.1

申请日：1997-06-05

Applicant: Candescent Technologies Corporation

Inventor： HAVEN, Duane, A. ,  LUDWIG, Paul, N. ,  SPINDT, Christopher, J. ,  DOBKIN, Daniel, M.

IPC: H01J1/30

CPC classification number: H01J9/025 ,  H01J2329/00

Abstract: A gated electron-emitter is fabricated by a process in which particles (26) are deposited over an insulating layer (24). Gate material is provided over the insulating layer in the space between the particles after which the particles and any overlying material are removed. The remaining gate material forms a gate layer (28A or 48A) through which gate openings (30 or 50) extend at the locations of the removed particles. When the gate material deposition is performed so that part of the gate material extends into the spaces below the particles, the gate openings are beveled. The insulating layer is etched through the gate openings to form dielectric openings (32 or 52). Electron-emissive elements (36A or 56A) are formed in the dielectric openings. This typically involves introducing emitter material through the gate openings into the dielectric openings and using a lift-off layer (34), or an electrochemical technique, to remove excess emitter material.