Abstract:
A field emission display (110) having a correction system (105) with a correction coefficient derived from emission current is presented. Within one embodiment, a field emission display (110) with an anode (25) at the faceplate and a focus structure (90). The anode potential is held at ground while the focus structure (90) potential is held between, but is not limited to, 40 and 50 volts. The current flowing to the focus structure (90) is measured and used as the basis for the correction coefficient for the field emission display (110).
Abstract:
A flat panel display is disclosed which includes a faceplate with a faceplate interior side, and a backplate including a backplate interior side in an opposing relationship to the faceplate interior side. Side walls are positioned between the faceplate and the backplate. The side walls, faceplate and backplate form an enclosed sealed envelope. A plurality of phosphor subpixels are positioned at the faceplate interior side. A plurality of field emitters are positioned at the backplate interior side. The field emitters emit electrons which strike corresponding phosphor subpixels. A plurality of scattering shields surround each phosphor subpixel and define a subpixel volume. The scattering shields reduce the number of scattered electrons exiting from their corresponding subpixel volume. This reduces the number of scattered electrons from charging internal insulating surfaces in the envelope, as well as striking the non-corresponding phosphor subpixels.
Abstract:
Methods and structures are provided which support spacer walls (100) in a position which facilitates installation of the spacer walls (100) between a faceplate and backplate of a flat display. In one embodiment, spacer feet (111, 112) are formed at the opposing ends of the spacer wall. Tacking electrodes can be provided on the faceplate to assert an electrostatic force on the spacer feet (111, 112), thereby holding the spacer feet in place during installation of the spacer wall. The spacer wall can be mechanically and/or thermally expanded prior to attaching both ends of the spacer wall to the faceplate. The spacer wall is then allowed to contract, thereby introducing tension into the spacer wall which tends to straighten any inherent wavines in the spacer wall. Alternatively, spacer clips can be clamped onto opposing ends of a spacer wall to support the spacer wall during installation. The spacer clips can provide electrical connections to face electrodes located on the spacer wall.
Abstract:
Methods for compensating for brightness variations in a field emission device. In one embodiment, a method and system are described for measuring therelative brightness of rows of a field emission display (FED) device, storinginformation representing the measured brightness into a correction table and using the correction table to provide uniform row brightness in the display by adjustingrow voltages and/or row on-time periods. A special measurement process is described for providing accurate current measurements on the rows. This embodiment compensates for brightness variations of the rows, e.g., for rows nearthe spacer walls. In another embodiment, a periodic signal, e.g., a high frequencynoise signal, is added to the row on-time pulse in order to camouflage brightnessvariations in the rows near the spacer walls. In another embodiment, the areaunder the row on-time pulse is adjusted to provide row-by-row brightnesscompensation based on correction values stored in a memory resident correctiontable. In another embodiment, the brightness of each row is measured and compiled into a data profile for the FED. The data profile is used to control cathodeburn-in processes so that brightness variations are corrected by physically altering the characteristics of the emitters of the rows.
Abstract:
A flat panel display (300) having a faceplate structure (320), a backplate structure (330), a focusing structure (333a), and a plurality of spacers (340). The backplate structure includes an electron emitting structure (332) which faces the faceplate structure. The focusing structure has a first surface which is located on the electron emitting structure, and a second surface which extends away from the electron emitting structure. The electrical end of the combination of the focusing structure and the electron emitting structure is located at an imaginary plane located intermediate the first and second surfaces of the focusing structure. The spacers are located between the focusing structure and the light emitting structure. Each spacer is located within a corresponding groove in the focusing structure such that the electrical end of each spacer is located coincident with the electrical end of the combination of the focusing structure and the electron emitting structure.
Abstract:
A gated electron-emitter is fabricated by a process in which particles (26) are deposited over an insulating layer (24). Gate material is provided over the insulating layer in the space between the particles after which the particles and any overlying material are removed. The remaining gate material forms a gate layer (28A or 48A) through which gate openings (30 or 50) extend at the locations of the removed particles. When the gate material deposition is performed so that part of the gate material extends into the spaces below the particles, the gate openings are beveled. The insulating layer is etched through the gate openings to form dielectric openings (32 or 52). Electron-emissive elements (36A or 56A) are formed in the dielectric openings. This typically involves introducing emitter material through the gate openings into the dielectric openings and using a lift-off layer (34), or an electrochemical technique, to remove excess emitter material.
Abstract:
A voltage-adjustment section (20) of an electronic device converts an input control voltage (VI) into an output control voltage (VO) in such a way that a collector current (ICP) form with electrons emitted from an emitter (EP) of an emission/collection cell (26), or triode, varies in a desired, typically linear, manner with the input control voltage. The triode further includes a collector (CP) that carries the collector current and a gate electrode (GP) that regulates the collector current as a function of the output control voltage. Control of the collector current so as to achieve the desired current/voltage relationship is achieved with an analog control loop containing the triode and an amplifier (28) coupled between the triode's collector and gate electrode. The triode thus typically has a linear gamma characteristic relative to the input control voltage. The voltage-adjustment section is suitable for use in a display device such as a flat-panel display.
Abstract:
An electron-emitter having a lower non-insulating emitter region (42), an overlying insulating layer (44), and a gate layer (48A, 60A, 60B, 120A, or 180A/184) is fabricated by a process in which particles (46) are distributed over one of the following layers: the insulating layer, the gate layer, a primary layer (50A, 62A, or 72) provided over the gate layer, a further layer (74) provided over the primary layer, or a pattern-transfer layer (182). The particles are utilized in defining gate openings (54, 66, 80, 122, or 186/188) through the gate layer. The gate openings are then variously employed in forming dielectric openings (56, 58, 80, 114, 128, 144, or 154) through the insulating layer. Electron-emissive elements that can, for example, be shaped like cones (58A or 70A) or like filaments (106B, 116B, 130A, 146A, or 156B) are formed in the dielectric openings.
Abstract:
An electrochemical technique is employed for removing certain material from a partially finished structure without significantly chemically attacking certain other material of the same chemical type as the removed material. The partially finished structure contains a first electrically non-insulating layer (52C) consisting at least partially of first material, typically excess emitter material that accumulates during the deposition of the emitter material to form electron-emissive elements (52A) in an electron emitter, that overlies an electrically insulating layer (44). An electrically non-insulating member, such as an electron-emissive element, consisting at least partially of the first material is situated at least partly in an opening (50) extending through the insulating layer. With the partially finished structure so arranged, at least part of the first material of the first non-insulating layer is electrochemically removed such that the non-insulating member is exposed without significantly attacking the first material of the non-insulating member.
Abstract:
Methods and structures are provided which reduce charge build up on spacer walls in a flat panel display. In one embodiment, the order of activating the electron emitting elements is modified such that the electron emitting elements adjacent to the spacers are activated before the electron emitting elements which charge thespacers (501, 502, 503) to an undesirable level. In another embodiment, face electrodes (501a, 502a, 503a) which are located on the surface of the spacer are connected to a common bus (504), thereby distributing the charge built up on any particular spacer. The common bus (504) can further be connected to a capacitor (1010) which is located either inside or outside the active region of the flat panel display, thereby increasing the charging time constant of the spacers. The capacitor can be connected to ground or to a high voltage supply (1011). In another embodiment, the charging time constant of the spacers is increased by fabricating the spacers from a material having a high dielectric constant, such as dispersion of aluminum oxide, chromium oxide and titanium oxide, wherein the titanium oxide makes up approximately four percent of the spacer material.