公开(公告)号：WO1997033297A1

公开(公告)日：1997-09-12

申请号：PCT/US1997002973

申请日：1997-03-05

Applicant: CANDESCENT TECHNOLOGIES CORPORATION

Inventor： CANDESCENT TECHNOLOGIES CORPORATION ,  SPINDT, Christopher, J. ,  CHAKAROVA, Gabriela, S. ,  NIKOLOVA, Maria, S. ,  SEARSON, Peter, C. ,  HAVEN, Duane, A. ,  KNALL, Nils, Johan ,  MACAULAY, John, C. ,  BARTON, Roger, W.

IPC: H01J09/02

CPC classification number: H01J9/025

Abstract: An electrochemical technique is employed for removing certain material from a partially finished structure without significantly chemically attacking certain other material of the same chemical type as the removed material. The partially finished structure contains a first electrically non-insulating layer (52C) consisting at least partially of first material, typically excess emitter material that accumulates during the deposition of the emitter material to form electron-emissive elements (52A) in an electron emitter, that overlies an electrically insulating layer (44). An electrically non-insulating member, such as an electron-emissive element, consisting at least partially of the first material is situated at least partly in an opening (50) extending through the insulating layer. With the partially finished structure so arranged, at least part of the first material of the first non-insulating layer is electrochemically removed such that the non-insulating member is exposed without significantly attacking the first material of the non-insulating member.

Abstract translation: 采用电化学技术从部分完成的结构中去除某些材料，而不会显着地化学侵蚀与去除的材料相同的化学类型的某些其他材料。 部分完成的结构包含至少部分由第一材料构成的第一非绝缘层（52C），通常是在发射体材料沉积期间积累以形成电子发射器中的电子发射元件（52A）的过量发射极材料， 其覆盖电绝缘层（44）。 至少部分由第一材料组成的电绝缘构件，例如电子发射元件至少部分地位于延伸穿过绝缘层的开口（50）中。 在部分完成的结构如此布置的情况下，第一非绝缘层的第一材料的至少一部分被电化学去除，使得非绝缘构件暴露而不显着地侵害非绝缘构件的第一材料。

公开(公告)号：EP0993513A1

公开(公告)日：2000-04-19

申请号：EP98931401.8

申请日：1998-06-29

Applicant: Candescent Technologies Corporation

Inventor： KNALL, N., Johan ,  PORTER, John, D. ,  SPINDT, Christopher, J. ,  CHAKAROVA, Gabriela, S. ,  HAVEN, Duane, A. ,  MACAULAY, John, C. ,  BARTON, Roger, W. ,  NIKOLOVA, Maria, S. ,  SEARSON, Peter, C.

IPC: C25F3/00

CPC classification number: H01J9/025

Abstract: An impedance-assisted electrochemical procedure is employed for selectively removing certain material from a structure without significantly electrochemically attacking, and thus without significantly removing, certain other material of the same chemical type as the removed material.

公开(公告)号：EP0885452A1

公开(公告)日：1998-12-23

申请号：EP97916717.0

申请日：1997-03-05

Applicant: Candescent Technologies Corporation

Inventor： SPINDT, Christopher, J. ,  CHAKAROVA, Gabriela, S. ,  NIKOLOVA, Maria, S. ,  SEARSON, Peter, C. ,  HAVEN, Duane, A. ,  KNALL, Nils, Johan ,  MACAULAY, John, C. ,  BARTON, Roger, W.

IPC: B81C1 ,  C25F3 ,  H01J9

CPC classification number: H01J9/025

Abstract: An electrochemical technique is employed for removing certain material from a partially finished structure without significantly chemically attacking certain other material of the same chemical type as the removed material. The partially finished structure contains a first electrically non-insulating layer (52C) consisting at least partially of first material, typically excess emitter material that accumulates during the deposition of the emitter material to form electron-emissive elements (52A) in an electron emitter, that overlies an electrically insulating layer (44). An electrically non-insulating member, such as an electron-emissive element, consisting at least partially of the first material is situated at least partly in an opening (50) extending through the insulating layer. With the partially finished structure so arranged, at least part of the first material of the first non-insulating layer is electrochemically removed such that the non-insulating member is exposed without significantly attacking the first material of the non-insulating member.