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    ELECTROCHEMICAL REMOVAL OF MATERIAL, PARTICULARLY EXCESS EMITTER MATERIAL IN ELECTRON-EMITTING DEVICE
    1.
    发明申请
    ELECTROCHEMICAL REMOVAL OF MATERIAL, PARTICULARLY EXCESS EMITTER MATERIAL IN ELECTRON-EMITTING DEVICE 审中-公开
    材料的电化学去除，电子发射器件中的特别发射材料

    公开(公告)号：WO1997033297A1

    公开(公告)日：1997-09-12

    申请号：PCT/US1997002973

    申请日：1997-03-05

    Applicant: CANDESCENT TECHNOLOGIES CORPORATION

    Inventor： CANDESCENT TECHNOLOGIES CORPORATION ,  SPINDT, Christopher, J. ,  CHAKAROVA, Gabriela, S. ,  NIKOLOVA, Maria, S. ,  SEARSON, Peter, C. ,  HAVEN, Duane, A. ,  KNALL, Nils, Johan ,  MACAULAY, John, C. ,  BARTON, Roger, W.

    IPC: H01J09/02

    CPC classification number: H01J9/025

    Abstract: An electrochemical technique is employed for removing certain material from a partially finished structure without significantly chemically attacking certain other material of the same chemical type as the removed material. The partially finished structure contains a first electrically non-insulating layer (52C) consisting at least partially of first material, typically excess emitter material that accumulates during the deposition of the emitter material to form electron-emissive elements (52A) in an electron emitter, that overlies an electrically insulating layer (44). An electrically non-insulating member, such as an electron-emissive element, consisting at least partially of the first material is situated at least partly in an opening (50) extending through the insulating layer. With the partially finished structure so arranged, at least part of the first material of the first non-insulating layer is electrochemically removed such that the non-insulating member is exposed without significantly attacking the first material of the non-insulating member.

    Abstract translation: 采用电化学技术从部分完成的结构中去除某些材料，而不会显着地化学侵蚀与去除的材料相同的化学类型的某些其他材料。 部分完成的结构包含至少部分由第一材料构成的第一非绝缘层（52C），通常是在发射体材料沉积期间积累以形成电子发射器中的电子发射元件（52A）的过量发射极材料， 其覆盖电绝缘层（44）。 至少部分由第一材料组成的电绝缘构件，例如电子发射元件至少部分地位于延伸穿过绝缘层的开口（50）中。 在部分完成的结构如此布置的情况下，第一非绝缘层的第一材料的至少一部分被电化学去除，使得非绝缘构件暴露而不显着地侵害非绝缘构件的第一材料。

    GATED FILAMENT STRUCTURES FOR A FIELD EMISSION DISPLAY
    3.
    发明公开
    GATED FILAMENT STRUCTURES FOR A FIELD EMISSION DISPLAY 失效
    GATE-的纤维结构用于场致发射显示装置

    公开(公告)号：EP0807314A1

    公开(公告)日：1997-11-19

    申请号：EP96905347.0

    申请日：1996-01-31

    Applicant: Candescent Technologies Corporation

    Inventor： BERGERON, David, L. ,  MACAULAY, John, M. ,  BARTON, Roger, W. ,  MORSE, Jeffrey, D.

    IPC: H01J1 ,  H01J9 ,  H01J29 ,  H01J31

    CPC classification number: H01J1/3042 ,  H01J9/025 ,  H01J2201/30457 ,  H01J2201/319

    Abstract: A gated filament structure for a field emission display includes a plurality of filaments. Included is a substrate, an insulating layer positioned adjacent to the substrate, and a metal gate layer position adjacent to the insulating layer. The metal gate layer has a plurality of gates, the metal gate layer having an average thickness 's' and a top metal gate layer planar surface that is substantially parallel to a bottom metal gate layer planar surface. The metal gate layer includes a plurality of apertures extending through the gates. Each aperture has an average width 'r' along a bottom planar surface of the aperture. Each aperture defines a midpoint plane positioned parallel to and equally distant from the top metal gate layer planar surface and the bottom metal gate layer planar surface. A plurality of filaments are individually positioned in an aperture. Each filament has a filament axis. The intersection of the filament axis and the midpoint plane defines a point 'O'. Each filament includes a filament tip terminating at a point 'A'. A majority of all filament tips of the display have a length 'L' between each filament tip at point A and point O along the filament axis where, L « (s + r)/2.

    ELECTROCHEMICAL REMOVAL OF MATERIAL, PARTICULARLY EXCESS EMITTER MATERIAL IN ELECTRON-EMITTING DEVICE
    6.
    发明公开
    ELECTROCHEMICAL REMOVAL OF MATERIAL, PARTICULARLY EXCESS EMITTER MATERIAL IN ELECTRON-EMITTING DEVICE 失效
    材料特别是关于液体EMITTERENDEM材料以电子发射终端设备电化学拆除

    公开(公告)号：EP0885452A1

    公开(公告)日：1998-12-23

    申请号：EP97916717.0

    申请日：1997-03-05

    Applicant: Candescent Technologies Corporation

    Inventor： SPINDT, Christopher, J. ,  CHAKAROVA, Gabriela, S. ,  NIKOLOVA, Maria, S. ,  SEARSON, Peter, C. ,  HAVEN, Duane, A. ,  KNALL, Nils, Johan ,  MACAULAY, John, C. ,  BARTON, Roger, W.

    IPC: B81C1 ,  C25F3 ,  H01J9

    CPC classification number: H01J9/025

    Abstract: An electrochemical technique is employed for removing certain material from a partially finished structure without significantly chemically attacking certain other material of the same chemical type as the removed material. The partially finished structure contains a first electrically non-insulating layer (52C) consisting at least partially of first material, typically excess emitter material that accumulates during the deposition of the emitter material to form electron-emissive elements (52A) in an electron emitter, that overlies an electrically insulating layer (44). An electrically non-insulating member, such as an electron-emissive element, consisting at least partially of the first material is situated at least partly in an opening (50) extending through the insulating layer. With the partially finished structure so arranged, at least part of the first material of the first non-insulating layer is electrochemically removed such that the non-insulating member is exposed without significantly attacking the first material of the non-insulating member.

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