公开(公告)号：DE68921687D1

公开(公告)日：1995-04-20

申请号：DE68921687

申请日：1989-08-31

Applicant: CANON KK

Inventor： MORI TETSUZO ,  SAKAMOTO EIJI ,  HARA SHINICHI ,  UDA KOJI ,  SHIMODA ISAMU ,  UZAWA SHINICHI

IPC: G03F7/20

Abstract: The mask(3) and the wafer (4) are closely disposed, and predetermined exposure energy is applied to the respective shot areas of the wafer(4) through the mask (3). The exposure energy is soft-X-ray source, for example. The pattern of the mask (3) is transferred onto the respective shot areas in a step-and-repeat manner. In the apparatus (fig 1), a temperature control medium liquid is supplied into the wafer chuck (5) for supporting the wafer (4) at the exposure position. The flow rate is different during the exposure operation than during the non-exposure-operation. The flow control (10) is determined in consideration of the wafer chuck vibration attributable to the supply of the liquid medium and also to the heat generation in the wafer(4) by the exposure energy, so that the vibration of the wafer chuck (5) during the exposure operation is suppressed, and simultaneously, the temperature rise of the wafer (4) can be also suppressed. The pattern transfer from the mask (3) to the wafer (4) can be precisely performed.

公开(公告)号：DE68921687T2

公开(公告)日：1995-08-03

申请号：DE68921687

申请日：1989-08-31

Applicant: CANON KK

Inventor： MORI TETSUZO ,  SAKAMOTO EIJI ,  HARA SHINICHI ,  UDA KOJI ,  SHIMODA ISAMU ,  UZAWA SHINICHI

IPC: G03F7/20

Abstract: The mask(3) and the wafer (4) are closely disposed, and predetermined exposure energy is applied to the respective shot areas of the wafer(4) through the mask (3). The exposure energy is soft-X-ray source, for example. The pattern of the mask (3) is transferred onto the respective shot areas in a step-and-repeat manner. In the apparatus (fig 1), a temperature control medium liquid is supplied into the wafer chuck (5) for supporting the wafer (4) at the exposure position. The flow rate is different during the exposure operation than during the non-exposure-operation. The flow control (10) is determined in consideration of the wafer chuck vibration attributable to the supply of the liquid medium and also to the heat generation in the wafer(4) by the exposure energy, so that the vibration of the wafer chuck (5) during the exposure operation is suppressed, and simultaneously, the temperature rise of the wafer (4) can be also suppressed. The pattern transfer from the mask (3) to the wafer (4) can be precisely performed.