公开(公告)号：HK1035806A1

公开(公告)日：2001-12-07

申请号：HK01106293

申请日：2001-09-06

Applicant: CASIO COMPUTER CO LTD

Inventor： KUWABARA OSAMU

IPC: H01L23/12 ,  H01L21/56 ,  H01L21/60 ,  H01L23/492 ,  H01L

Abstract: A sealing film (18) is formed by a screen printing method. In this case, the temperature of the printing table (13) is set at about 30 to 50 DEG C by the heat generation from a planar heater (16) arranged within the printing table (13). A liquid sealing resin having a relatively high viscosity of about 500,000 to 1,500,000 cPS is used for forming the sealing film (18). However, the liquid sealing film is warmed by the printing table (13) to about 30 to 50 DEG C. As a result, the viscosity of the liquid sealing resin is lowered to about 50,000 to 200,000 cPS. After the curing, the viscosity of the sealing film (18) is brought back to the original value of about 500,000 to 1,500,000 cPS.

公开(公告)号：JP2010147292A

公开(公告)日：2010-07-01

申请号：JP2008323728

申请日：2008-12-19

Applicant: Casio Computer Co Ltd ,  カシオ計算機株式会社

Inventor： KOMUTSU YASUSUKE ,  OKADA OSAMU ,  KUWABARA OSAMU ,  SHIODA JUNJI ,  FUJII NOBUMITSU

IPC: H01L23/12

CPC classification number: H01L2224/11

Abstract: PROBLEM TO BE SOLVED: To prevent a resin protective film from being easily warped entirely in curing when forming the resin protective film for protecting bottom and side faces of a silicon substrate. SOLUTION: First, a groove 28 is formed in a semiconductor wafer 21, a sealing film 12, and the like at a dicing street 22 and parts corresponding to both the sides of the dicing street 22. In this state, the semiconductor wafer 21 is separated into individual silicon substrates 1 by the formation of the groove 28. Then, a resin protective film 11 is formed on the bottom face of the respective silicon substrates 1 including the inside of the groove 28. In this case, although the semiconductor wafer 21 is separated into the individual silicon substrates 1, a first support plate 24 is stuck to an upper surface of a columnar electrode 10 and the sealing film 12 via a first adhesive layer 23, thus preventing an entire part including the individually separated silicon substrates 1 from being warped easily when forming the resin protective film 11. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：为了防止树脂保护膜在形成用于保护硅衬底的底部和侧面的树脂保护膜时在固化中容易翘曲。 解决方案：首先，在切割街道22处的半导体晶片21，密封膜12等中形成凹槽28，并且与切割街22的两侧对应的部分形成凹槽28.在该状态下，半导体 通过形成槽28将晶片21分离成单独的硅基板1.然后，在包括槽28的内部的各硅衬底1的底面上形成树脂保护膜11.在这种情况下，虽然 将半导体晶片21分离为单独的硅基板1，第一支撑板24经由第一粘合层23粘贴在柱状电极10的上表面和密封膜12上，从而防止包括单独分离的硅的整个部分 当形成树脂保护膜11时，基材1容易翘曲。版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2001085562A

公开(公告)日：2001-03-30

申请号：JP26061499

申请日：1999-09-14

Applicant: CASIO COMPUTER CO LTD

Inventor： KUWABARA OSAMU

IPC: H01L23/12 ,  H01L21/56 ,  H01L21/60 ,  H01L23/492

Abstract: PROBLEM TO BE SOLVED: To easily form the sealing film of a semiconductor device with an inexpensive device and to use liquid sealing resin which has relatively high viscosity. SOLUTION: The sealing film 18 is formed by screen printing. In this case, a printing table 13 is held at almost 30 to 50 deg.C by the heat generation of a flat heater 15 provided in the printing table 13. The liquid sealing resin, used to form the sealing film 18, has a relatively high viscosity of about 500,000 to 1,5000,000 cPS. This liquid sealing resin, however, is heated with the printing table 13 to reach 30 to 40 deg.C. Consequently, the viscosity of the liquid sealing resin decreases to about 500,000 to 200,000 cPS. Then the sealing film 18, after being hardened, has the original viscosity of about 500,000 to 1,500,000 cPS.

公开(公告)号：JPH09130000A

公开(公告)日：1997-05-16

申请号：JP30971495

申请日：1995-11-06

Applicant: CASIO COMPUTER CO LTD

Inventor： WAKIZAKA SHINJI ,  WATANABE KATSUMI ,  YAMAMOTO MICHIHIKO ,  KUWABARA OSAMU

IPC: H01L21/60 ,  H01L23/12 ,  H05K1/11 ,  H05K3/46

Abstract: PROBLEM TO BE SOLVED: To reduce the number of manufacturing processes for a sub-circuit board on which a semiconductor chip is mounted to modify the arrangement pattern of connection pads of the semiconductor chip. SOLUTION: Five board-forming plates 26a-26e for forming a sub-circuit board 25 are bonded in this order on a protective film 24 of a semiconductor chip 21. Thereupon, through holes 28 are formed from openings 27a-27e formed in the respective board-forming plates 26a-26e. Then, electrically conductive paste 31 is injected and filled in the through holes 28. Thereupon, a first connection pad is formed of the electrically conductive paste 31 filled in the opening 27a, and this first connection pad is joined with a connection pad 23 of the semiconductor chip 21. A second connection pad is formed of the electrically conductive paste 31 filled in the opening 27e. The electrically conductive paste 31 filled in the openings 27b-27d forms internal electrically conductive parts.

公开(公告)号：JPH0936172A

公开(公告)日：1997-02-07

申请号：JP20408795

申请日：1995-07-19

Applicant: CASIO COMPUTER CO LTD

Inventor： WATANABE KATSUMI ,  WAKABAYASHI TAKESHI ,  WAKIZAKA SHINJI ,  KUWABARA OSAMU ,  KIZAKI MASAYASU

IPC: H01L21/60 ,  H01L21/321 ,  H01L23/32

Abstract: PROBLEM TO BE SOLVED: To enable a semiconductor device to be lessened in thickness and wiring resistance between a semiconductor chip and a sub-circuit board, wherein the semiconductor device is equipped with a sub-circuit board so as to substantially enhance the bumps of the semiconductor chip in size and arrangement pitch. SOLUTION: Gold bumps 46 formed under a connection pad 43 of a semiconductor chip 41 are directly bonded to a gold plating layer 33 formed on a first connection pad 22 of a sub-circuit board 21, so that a semiconductor device is lessened in wiring resistance. The gold bumps 46 are comparatively high and set as high as 10 to 80μm, preferably 20 to 40μm after they are bonded. The reason why the bumps 40 are set comparatively high is that a resin sealing material 51 is easily embedded between the upside of the sub-circuit board 21 and the underside of the semiconductor chip 41 caused by a capillary phenomenon. In this case, though the gold bumps 46 are set comparatively high, a gap between the upside of the sub-circuit board 21 and the underside of the semiconductor chip 41 is stopped up with resin sealing material 51, so that a semiconductor device of this constitution can be lessened in thickness.

公开(公告)号：JPH07161766A

公开(公告)日：1995-06-23

申请号：JP33919193

申请日：1993-12-06

Applicant: CASIO COMPUTER CO LTD

Inventor： KUWABARA OSAMU

IPC: H01L21/60 ,  H05K1/00 ,  H05K1/05 ,  H05K3/34

Abstract: PURPOSE:To prevent generation of defective bonding and the breaking of wire between the electrode of a semiconductor chip and the electrode of a film substrate. CONSTITUTION:The title semiconductor device is formed by mounting a semiconductor chip 4 by a method wherein the semiconductor chip 4 is connected to the upper surface of a film substrate 2, where a metal plate 1 is provided on the lower surface, through the intermediary of solder bumps 3. The warpage and the distortion of the substrate 2 in the region, where the semiconductor chip 4 is mounted, are prevented by providing a metal plate 1 on the part, corresponding to the mounting region of the semiconductor chip 4, on the lower surface of the film substrate 2, and also the generation of a defective bonding and disconnection of wire between the electrode 6 of the semiconductor chip 4 and the electrode is prevented.

公开(公告)号：JPH0434989A

公开(公告)日：1992-02-05

申请号：JP13965490

申请日：1990-05-31

Applicant: CASIO COMPUTER CO LTD

Inventor： MUTO JIRO ,  KUWABARA OSAMU ,  ABE AKIHIKO

IPC: B41J2/345 ,  H05K3/00 ,  H05K3/40 ,  H05K3/42

Abstract: PURPOSE:To contrive the miniaturization of electrodes, such as a selective electrode and the like, and to contrive a high-density wiring and a reduction in the size of a substrate by a method wherein conductive layers, whose uppermost parts consist of a gold layer, are respectively formed on both surfaces of the substrate and a through hole which penetrates the substrate is formed at places, where respectively correspond to the electrode on the upper surface of the substrate and the electrode on the lower surface of the substrate, by performing a reactive ion etching using the metal layers of the uppermost parts as masks. CONSTITUTION:A through hole 7, through which a selective electrode 2 is connected with a connection electrode 4, can be formed at a fine hole diameter. As a result, the widths of the electrodes 2 and 4 and the interval between the electrodes 2 and 4 can be formed fine, a high-density wiring and a high-density mounting become possible and in its turn a reduction in the size of the whole film substrate 1 becomes possible. Accordingly, in this thermal printing head, a thin film heating resistance layer 11 is provided on the side of the upper surface of the substrate 1 and an IC chip 15 can be mounted on the side of the lower surface of the substrate. Thereby, even if the size of the whole substrate 1 is reduced, the chip 15 does not obstruct a platen when a heat generating part is pushed against the platen or the like and a heat-sensitive printing is performed on a recording paper and the heat-sensitive printing can favorably be conducted.

公开(公告)号：JPH0433867A

公开(公告)日：1992-02-05

申请号：JP13857790

申请日：1990-05-30

Applicant: CASIO COMPUTER CO LTD

Inventor： KUWABARA OSAMU ,  MUTO JIRO ,  ABE AKIHIKO

IPC: B41J2/335

Abstract: PURPOSE:To achieve excellent productivity by a simple structure without using a CVD method for formation of a projection part and to enable a heating part to project sufficiently by a method wherein a fiber of which an upper part projects from an upper surface of an electrode is provid-between the opposed electrodes established to each other on a substrate, and the heating part of a thin film heating resistance layer projects from other part using this fiber. CONSTITUTION:A fiber 16 of approx. 50mum in thickness is bonded to a film substrate 10 by an adhesive 17. Then, the fiber 16 is provided by projecting its upper part above from upper surfaces of respective electrodes 11, 12. Thereafter, the adhesive is dried and then, a thin film heating resistance layer 18 is formed on the fiber 16. Thereby, the thin film heating resistance 18 rides across the fiber 16, and its both ends are connected to end parts 13, 14 of the electrodes 11, 12 to be formed. Consequently, the thin film heating resistance layer 18, especially its heating part projects by a uniform height above other part by the fiber 16. Lastly a protective layer 19 for protecting the thin film heating resistance layer 18 and the electrodes 11, 12 is established on whole surfaces. This protective layer 12 is constructed of two layers.

公开(公告)号：JP2010238901A

公开(公告)日：2010-10-21

申请号：JP2009084999

申请日：2009-03-31

Applicant: Casio Computer Co Ltd ,  カシオ計算機株式会社

Inventor： KUWABARA OSAMU

IPC: H01L23/12 ,  H01L21/3205 ,  H01L23/52

CPC classification number: H01L2224/11

Abstract: PROBLEM TO BE SOLVED: To provide a silicon substrate having a thickness thinner than before when manufacturing a semiconductor device having a structure which covers the side surface of the silicon substrate with a sealing film and covers the lower surface of the substrate with a lower layer protection film. SOLUTION: A semiconductor wafer 21 except for its periphery is thinned by steps of: forming the sealing film 11 on the wafer 21, and forming a recessed portion 31 in the wafer by grinding its bottom surface side except for its periphery using a rotational grinding stone 30. In this case, the presence of the sealing film 11 and the removal of the periphery of the wafer 21 enable the semiconductor wafer 21 to hardly be broken even if the wafer 21 is thinned than before, that is, enable the thickness of the silicon substrate 1 to be thinner than before. For example, the thickness of the silicon substrate 1 can significantly be thinned to be 20 to 30 μm. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：为了提供一种具有比以前更薄的厚度的硅衬底，当制造具有用密封膜覆盖硅衬底的侧表面的结构的半导体器件并且用基片覆盖衬底的下表面 下层保护膜。 解决方案：除了其外围的半导体晶片21之外，通过以下步骤减薄半导体晶片21：在晶片21上形成密封膜11，并且通过使用 旋转研磨石30.在这种情况下，即使晶片21比以前变薄，密封膜11的存在和晶片21的周边的移除也能够使得半导体晶片21几乎不会破裂，即， 硅衬底1的厚度要比以前薄。 例如，硅基板1的厚度可以明显变薄为20〜30μm。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010147355A

公开(公告)日：2010-07-01

申请号：JP2008324909

申请日：2008-12-22

Applicant: Casio Computer Co Ltd ,  カシオ計算機株式会社

Inventor： SHIODA JUNJI ,  KOMUTSU YASUSUKE ,  FUJII NOBUMITSU ,  KUWABARA OSAMU ,  OKADA OSAMU ,  KIZAKI MASAYASU ,  MASUDA TAKASHI

IPC: H01L23/12

CPC classification number: H01L2224/11

Abstract: PROBLEM TO BE SOLVED: To prevent a resin protective film from being easily warped entirely in curing when forming the resin protective film for protecting bottom and side faces of a silicon substrate. SOLUTION: First, a first groove 28 is formed in a semiconductor wafer 21, a sealing film 12, and the like at a dicing street 22 and parts corresponding to both the sides of the dicing street 22. In this state, the semiconductor wafer 21 is separated into individual silicon substrates 1 by the formation of the first groove 28. Then, a resin protective film 11 is formed on the bottom face of the respective silicon substrates 1 including the inside of the first groove 28. In this case, although the semiconductor wafer 21 is separated into the individual silicon substrates 1, a first support plate 24 is stuck to an upper surface of a columnar electrode 10 and the sealing film 12 via a first adhesive layer 23, thus preventing an entire part including the individually separated silicon substrates 1 from being warped easily when forming the resin protective film 11. COPYRIGHT: (C)2010,JPO&INPIT