公开(公告)号：JPH08274109A

公开(公告)日：1996-10-18

申请号：JP27773995

申请日：1995-10-25

Applicant: CONS RIC MICROELETTRONICA

Inventor： ZAMBRANO RAFFAELE ,  FALLICO GIUSEPPE

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/10 ,  H01L29/423 ,  H01L29/732

Abstract: PROBLEM TO BE SOLVED: To improve the speed performance of a high-frequency bipolar- transistor structure. SOLUTION: The structure of a high-frequency bipolar transistor has an intrinsic base region 6 surrounded by an extrinsic base region 5 and has a first conductivity type base region 4 formed in a second conductivity type silicon layer 3 and a second conductivity type emitter region 7 formed at the inner side of the intrinsic base region 6. A first polysilicon layer 9 and a second polysilicon layer 15 are brought into contact with the extrinsic base region 5 and the emitter region 7, respectively. The first and second polysilicon layers 9 and 15 are brought into contact with a base metal electrode 13 and an emitter metal electrode 16, respectively. A silicide layer 8 is provided between the extrinsic base region 5 and the first polysilicon layer 9, and the extrinsic base resistance of the bipolar transistor is decreased.

公开(公告)号：DE69433965D1

公开(公告)日：2004-09-30

申请号：DE69433965

申请日：1994-10-26

Applicant: CONS RIC MICROELETTRONICA

Inventor： FALLICO GIUSEPPE ,  ZAMBRANO RAFFAELE

IPC: H01L29/735 ,  H01L21/331

Abstract: A high-frequency lateral PNP transistor presenting a base region (63') laterally delimited by P type emitter (68) and collector (69) regions, and at the top by a surface portion (67) of the N type semiconductor body (63) housing the active area of the transistor. The surface portion (67) delimiting the base region (63') presents no formations of insulating material grown across the surface, so that the width (WB) of the base region (63') is reduced and ensures optimum dynamic characteristics of the transistor. The base contact (80, 82) may be located directly over the surface portion facing the base region (63'), to reduce the extrinsic base resistance and overall size of the device, or it may be located remotely and connected to the base region by a buried layer (62) and sinker region (88) to further reduce the base width.

公开(公告)号：DE69427913T2

公开(公告)日：2002-04-04

申请号：DE69427913

申请日：1994-10-28

Applicant: CONS RIC MICROELETTRONICA

Inventor： ZAMBRANO RAFFAELE ,  FALLICO GIUSEPPE

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/10 ,  H01L29/423 ,  H01L29/732

公开(公告)号：DE69427913D1

公开(公告)日：2001-09-13

申请号：DE69427913

申请日：1994-10-28

Applicant: CONS RIC MICROELETTRONICA

Inventor： ZAMBRANO RAFFAELE ,  FALLICO GIUSEPPE

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/10 ,  H01L29/423 ,  H01L29/732