公开(公告)号：EP3228584A4

公开(公告)日：2018-07-04

申请号：EP15865926

申请日：2015-07-31

Applicant: CSMC TECHNOLOGIES FAB1 CO LTD

Inventor： JING ERRONG

IPC: B81C1/00

CPC classification number: B81C1/00182 ,  B81B3/0021 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2203/058 ,  B81C1/00603 ,  B81C2201/0109 ,  B81C2201/0111

Abstract: A method for manufacturing an MEMS torsional electrostatic actuator comprises: providing a substrate (10), wherein the substrate (10) comprises a first silicon layer (100), a buried oxide layer (200) and a second silicon layer (300) that are laminated sequentially; patterning the first silicon layer (100) and exposing the buried oxide layer (200) to form a rectangular upper electrode plate (120) separated from a peripheral region (140), wherein the upper electrode plate (120) and the peripheral region (140) are connected by only using a cantilever beam (130), and forming, on the peripheral region (140), a recessed portion (110) exposing the buried oxide layer (200); patterning the second silicon layer (300) and exposing the buried oxide layer (200) to form a back cavity (310), wherein the back cavity (310) is located in a region of the second silicon layer (300) corresponding to the upper electrode plate (120), covers 40% to 60% of the area of the region corresponding to the upper electrode plate (120), and is close to one end of the cantilever beam (130); exposing the second silicon layer (300), and suspending the upper electrode plate (120) and the cantilever beam (130); and respectively forming an upper contact electrode (400) and a lower contact electrode (500) on the second silicon layer (300).

公开(公告)号：EP3228583A4

公开(公告)日：2018-07-25

申请号：EP15866031

申请日：2015-08-20

Applicant: CSMC TECHNOLOGIES FAB1 CO LTD

Inventor： JING ERRONG

IPC: B81B7/02 ,  B81C1/00 ,  G01J5/02 ,  G01J5/08

CPC classification number: B81B7/02 ,  B81B2201/0278 ,  B81B2203/0118 ,  B81C1/00 ,  B81C1/0015 ,  B81C2201/0197 ,  G01J1/04 ,  G01J1/42 ,  G01J5/024 ,  G01J5/0853

Abstract: A method for manufacturing a MEMS double-layer suspension microstructure comprises steps of: forming a first film body (310) on a substrate (100), and a cantilever beam (320) connected to the substrate (100) and the first film body (310); forming a sacrificial layer (400) on the first film body (310) and the cantilever beam (320); patterning the sacrificial layer (400) located on the first film body (310) to manufacture a recessed portion (410) used for forming a support structure (520), the bottom of the recessed portion (410) being exposed of the first film body (310); depositing a dielectric layer (500) on the sacrificial layer (400); patterning the dielectric layer (500) to manufacture a second film body (510) and the support structure (520), the support structure (520) being connected to the first film body (310) and the second film body (510); and removing the sacrificial layer (400) to obtain the MEMS double-layer suspension microstructure.

公开(公告)号：EP3098196A4

公开(公告)日：2017-12-06

申请号：EP15860320

申请日：2015-08-19

Applicant: CSMC TECHNOLOGIES FAB1 CO LTD

Inventor： JING ERRONG

IPC: B81C1/00 ,  B81C3/00 ,  G03F9/00 ,  H01L21/68

CPC classification number: B81C3/004 ,  B81C1/00 ,  B81C1/00603 ,  B81C3/00 ,  B81C2203/051 ,  G03F9/00 ,  H01L21/68

Abstract: A positioning method in a microprocessing process of bulk silicon comprises the steps of: fabricating, on a first surface of a first substrate (10), a first pattern (100), a stepper photo-etching machine alignment mark (200) for positioning the first pattern, and a double-sided photo-etching machine first alignment mark (300) for positioning the stepper photo-etching machine alignment mark; fabricating, on a second surface, opposite to the first surface, of the first substrate, a double-sided photo-etching machine second alignment mark (400) corresponding to the double-sided photo-etching machine first alignment mark; bonding a second substrate (20) on the first surface of the first substrate; performing thinning on a first surface of the second substrate; fabricating, on the first surface of the second substrate, a double-sided photo-etching machine third alignment mark (500) corresponding to the double-sided photo-etching machine second alignment mark; and finding, on the first surface of the second substrate by using the double-sided photo-etching machine third alignment mark, a corresponding position of the stepper photo-etching machine alignment mark.