公开(公告)号：EP3150548A4

公开(公告)日：2018-01-03

申请号：EP15800029

申请日：2015-05-05

Applicant: CSMC TECHNOLOGIES FAB1 CO LTD

Inventor： HU YONGGANG ,  ZHOU GUOPING

IPC: B81C1/00

CPC classification number: B81C1/00619 ,  B81C1/00 ,  B81C2201/0133 ,  B81C2201/0142

Abstract: An MEMS-based method for manufacturing a sensor comprises the steps of: forming a shallow channel (120) and a support beam (140) on a front surface of a substrate (100); forming a first epitaxial layer (200) on the front surface of the substrate (100) to seal the shallow channel (120); forming a suspended mesh structure (160) below the first epitaxial layer (200); and forming a deep channel (180) at a position on a back surface of the substrate (100) corresponding to the shallow channel (120), so that the shallow channel (120) is in communication with the deep channel (180). In the Method of manufacturing a MEMS-based sensor, when a shallow channel is formed on a front surface, a support beam of a mass block is formed, so the etching of a channel is easier to control, the process is more precise, and the uniformity and the homogeneity of the formed support beam are better.

公开(公告)号：EP2894658A4

公开(公告)日：2016-05-25

申请号：EP13834518

申请日：2013-08-19

Applicant: CSMC TECHNOLOGIES FAB1 CO LTD

Inventor： ZHANG XINWEI ,  DAI DAN ,  ZHOU GUOPING ,  XIA CHANGFENG

IPC: H01L21/02

CPC classification number: B81C1/0038 ,  B81B2203/0127 ,  B81C1/00158 ,  B81C1/00531

公开(公告)号：EP2857348A4

公开(公告)日：2016-01-13

申请号：EP13813814

申请日：2013-06-29

Applicant: CSMC TECHNOLOGIES FAB1 CO LTD

Inventor： DAI DAN ,  ZHANG XINWEI ,  ZHOU GUOPING ,  XIA CHANGFENG

IPC: B81B7/00 ,  B81C1/00 ,  H01L27/00

CPC classification number: B81C1/00825 ,  B81B7/0029 ,  B81C1/0038 ,  B81C2201/0167 ,  B81C2201/053

Abstract: A MEMS chip (100) includes a silicon substrate layer (110), a first oxidation layer (120) and a first thin film layer (130). The silicon substrate layer includes a front surface (112) for a MEMS process and a rear surface (114), both the front surface and the rear surface being polished surfaces. The first oxidation layer is mainly made of silicon dioxide and is formed on the rear surface of the silicon substrate layer. The first thin film layer is mainly made of silicon nitride and is formed on the surface of the first oxidation layer. In the above MEMS chip, by sequentially laminating a first oxidation layer and a first thin film layer on the rear surface of a silicon substrate layer, the rear surface is effectively protected to prevent the scratch damage in the course of a MEMS process. A manufacturing method for the MEMS chip is also provided.

Abstract translation: MEMS芯片（100）包括硅衬底层（110），第一氧化层（120）和第一薄膜层（130）。 硅衬底层包括用于MEMS工艺的前表面（112）和后表面（114），前表面和后表面都是​​抛光表面。 第一氧化层主要由二氧化硅制成，并形成在硅衬底层的后表面上。 第一薄膜层主要由氮化硅制成并形成在第一氧化层的表面上。 在上述MEMS芯片中，通过在硅衬底层的后表面依次层叠第一氧化层和第一薄膜层，可有效地保护背面以防止MEMS工艺过程中的划痕损伤。 还提供了用于MEMS芯片的制造方法。