Abstract:
PROBLEM TO BE SOLVED: To provide a method for producing a polyol compound for photoresists which can reduce line edge roughness (LER) and can efficiently obtain a high purity polyol compound for photoresists useful in preparing a resist composition having excellent resolving power and etching resistance. SOLUTION: This method for producing a polyol compound for photoresists is to produce a polyol compound for photoresists in which an aliphatic group and an aromatic group having a hydroxyl group on the aromatic ring are alternately linked, and includes a step of mixing a solution of the polyol compound for photoresists, in which an aliphatic group formed by the acid catalyst reaction between an aliphatic polyol and an aromatic polyol and an aromatic group having a hydroxyl group on the aromatic ring are alternately linked, with a poor solvent for the compound having the phenolic hydroxyl group to separate and remove the hydrophobic impurities by deposition or phase separation. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To obtain the subject composition specified in the size distribution range of included particles, and capable of giving a molded product having high impact resistance, excellent in surface luster and quality balance. SOLUTION: This composition comprises (A) a styrene-based polymer as continuous phase and (B) rubbery polymer particles dispersed as disperse phase, having the following characteristics: the weight-average particle diameter of the component B is 0.3-2.0 (esp. 0.3-1.5)μm: the component A is included in the form of particles in the component B; the proportion of the rubbery polymer particles each including three or more particles of the component A accounts for >=70% of the component B; and >=50% of the number of the included particles (A) are those having a diameter of >0.3μm.
Abstract:
PROBLEM TO BE SOLVED: To provide a resin composition for forming a protective film, the composition resulting in a protective film that has no affinity to an immersion liquid, can suppress elution of a low molecular weight component from a resist layer or suppress swelling of a resist film, is easily removed in an alkali development process after exposure and gives a preferable pattern profile, and to provide a method for forming a liquid immersion exposure pattern by using the above composition. SOLUTION: The resin composition for forming a resist protective film contains a polymer having a repeating unit expressed by formula (1). The resin composition preferably contains a polymer having a repeating unit expressed by formula (1) as well as a (meth)acrylate repeating unit having a fluorine atom. In the repeating unit expressed by formula (1), X is more preferably a carboxylic acid. In formula (1), R1 represents a 1-20C aliphatic straight-chain or cyclic group; R2 represents a 1-20C aliphatic straight-chain or cyclic group; and X represents an alkali-soluble functional group such as -COOH, -SO 3 H and -CH(CF 3 )OH. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a method of suppressing a generation of striation without any need of adding a new component to a dropping polymer solution when a thin film is formed on a substrate by a spin coat method, furthermore with a simple operation. SOLUTION: The method of forming the thin film by applying the polymer solution on the substrate by the spin coat method gives the polymer solution shearing immediately before supplying the polymer solution to the substrate. The polymer solution containing at least a monomer unit having a polar group can be used as a polymer solution. As an application means of shearing, for example, at least one means selected from a supersonic wave, a shaking, a stirring, and a passage inside a narrow tube is included. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To obtain a rubber-modified styrene resin compsn. improved in impact resistance, stiffness and surface gloss by dispersing a rubberlike polymer in a styrene polymer so that the resultant compsn. has a core-shell structure, that the soft component has specified average particle size and rubber fraction and that the uncrosslinked rubber has a specified hydrogen-nucleus spin-spin relaxation time. SOLUTION: A rubberlike polymer is dispersed in a styrene polymer to obtain the objective compsn. In the compsn., each of soft component particles having an average particle size of 0.1-1.0 μm has a core shell structure comprising a shell consisting of a rubberlike polymer and a core consisting of a single continuous phase of a styrene resin and included therein; the fraction (%) of a crosslinked rubber, Fs/(Fs+Ft) [wherein Fs is the FID strength of the component (L) which is obtd. by dividing an FID strength curve obtd. by H-NMR analysis into a component (L) having a long hydrogen-nucleus spin-spin relaxation time and a component (S) having a short hydrogen-nucleus spin-spin relaxation time; and Ft is the FID strength of the component (S)], is 60-80%; and when the time-vs-FID strength curve of an FID component corresponding to the rubber phase in the soft component particle is divided into two components different in T2 , the hydrogen-nucleus spin-spin relaxation time of L is 2.5-20.0 ms.
Abstract:
PROBLEM TO BE SOLVED: To obtain a transparent rubber-modified styrene resin having highly balanced impact strength and resistance to whitening in bending or impacting. SOLUTION: This transparent rubber-modified styrene resin having highly balanced impact strength and whitening resistance is a rigid thermoplastic resin having a continuous phase consisting of a copolymer composed mainly of an aromatic vinyl compound and a (meth)acrylic acid (ester) and a disperse phase consisting of dispersed particles of a conjugated diene elastomer. The weight-average particle diameter of the dispersed particle is 0.01-0.1μm.
Abstract:
PROBLEM TO BE SOLVED: To provide an anti-reflection film forming composition used for formation of the anti-reflection film improved in a close adhesion property with a photoresist and etching characteristic and capable of suppressing falling of a pattern at development/dissolution of the photoresist, and a polymer used for it. SOLUTION: The polymer for forming the anti-reflection film having at least one monomer unit represented by formula (1) (wherein R1, R2, R3, R4 and R5 each represent a 1-6C alkyl group, X represents a mono-cyclic aliphatic hydrocarbon which may be substituted by a 1-5C alkyl group, a halogen atom, a hydroxyl group, a 1-5C alkoxy group, an acetyl group or a cyano group) is provided. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a methacrylic or acrylic monomer for synthesizing a resin useful as a photoresist, an antireflection film for manufacturing a semiconductor and a protective film for a photoresist resin, and a resin comprising the monomer; a resin for a resist protective film, which is excellent in water resistance, can form an even coating film on a photoresist resin layer, and furthermore can be dissolved and treated with an alkali developing solution; and a method of manufacturing a semiconductor which uses the protective film. SOLUTION: The methacrylic or acrylic monomer is expressed by formula (1). By the invention, a monomer for the photoresist resin and a resin useful for the antireflection film for manufacturing a semiconductor and the protective film for a photoresist resin and a resin comprising the monomer, can be provided. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an appropriate manufacturing method of an acrylic polymer compound used for a photoresist related to an ArF excimer laser. SOLUTION: The method for manufacturing a solution of a polymer compound for a photoresist comprises dissolving monomers comprising at least a monomer A bearing a group convertible into alkali-soluble by elimination by an acid and a monomer B having a polar group-bearing alicyclic skeleton and a polymerization initiator in a solvent, adding dropwise the resultant solution to a solvent having been raised to the polymerization temperature to allow the monomers to polymerize, adding the polymerization solution to a poor solvent (precipitation solvent) to cause the polymer to precipitate, centrifuging the precipitate by means of a centrifuge to remove the solvent, subsequently dissolving the wet crystal in a solvent, and concentrating the resultant solution by reduced-pressure distillation, where the molar ratio of methacrylate esters is at least 60 mol% based on the whole monomer used for polymerization. COPYRIGHT: (C)2007,JPO&INPIT