公开(公告)号：EP1750305A2

公开(公告)日：2007-02-07

申请号：EP06076339.8

申请日：2006-06-30

Applicant: Delphi Technologies, Inc.

Inventor： Stepniak, Frank ,  Higdon, William D.

IPC: H01L23/485

CPC classification number: H01L24/10 ,  H01L24/05 ,  H01L24/13 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05572 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/81011 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/83102 ,  H01L2224/83191 ,  H01L2224/92125 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/00014 ,  H01L2224/05552 ,  H01L2924/00

Abstract: An integrated circuit (IC) (200) includes a semiconductor material (102), electronic circuitry (104) formed on the semiconductor material (102), a contact layer (106) formed on the electronic circuitry (104), a final passivation layer (108) formed on the contact layer (106) and an under-bump metallurgy (UBM) (216) formed on at least a portion of the final passivation layer (108). The contact layer (106) includes a plurality of contacts pads (106A) for providing external access to the electronic circuitry (104). The final passivation layer (108) includes a plurality of windows that extend through the final passivation layer (108) to the contact pads (106A). The UBM (216) includes an aluminum layer having a thickness of about 800 angstroms to about 1200 angstroms, a nickel/vanadium (Ni/V) layer having a thickness of about 800 angstroms to about 1200 angstroms and a copper (Cu) layer having a thickness of about 800 angstroms to about 1200 angstroms.

Abstract translation: 集成电路（IC）（200）包括半导体材料（102），形成在半导体材料（102）上的电子电路（104），形成在电子电路（104）上的接触层（106），最终钝化层 （108），形成在所述接触层（106）上的凸起下金属（UBM）（216）和形成在所述最终钝化层（108）的至少一部分上的凸点状金属（UBM）。 接触层（106）包括用于提供对电子电路（104）的外部访问的多个接触焊盘（106A）。 最终钝化层（108）包括延伸穿过最终钝化层（108）到接触焊盘（106A）的多个窗口。 UBM（216）包括厚度约800埃至约1200埃的铝层，厚度约800埃至约1200埃的镍/钒（Ni / V）层和具有 约800埃至约1200埃的厚度。

公开(公告)号：EP1487016B1

公开(公告)日：2009-02-25

申请号：EP04076664.4

申请日：2004-06-04

Applicant: Delphi Technologies, Inc.

Inventor： Mithal, Pankaj ,  Higdon, William D. ,  Gose, Mark W. ,  Dikeman, John M.

IPC: H01L23/485 ,  H01L21/60 ,  H01L23/528

CPC classification number: H01L24/02 ,  H01L23/528 ,  H01L24/10 ,  H01L2224/0401 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14

公开(公告)号：EP1750305A3

公开(公告)日：2008-07-02

申请号：EP06076339.8

申请日：2006-06-30

Applicant: Delphi Technologies, Inc.

Inventor： Stepniak, Frank ,  Higdon, William D.

IPC: H01L23/485

CPC classification number: H01L24/10 ,  H01L24/05 ,  H01L24/13 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05572 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/81011 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/83102 ,  H01L2224/83191 ,  H01L2224/92125 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/00014 ,  H01L2224/05552 ,  H01L2924/00

Abstract: An integrated circuit (IC) (200) includes a semiconductor material (102), electronic circuitry (104) formed on the semiconductor material (102), a contact layer (106) formed on the electronic circuitry (104), a final passivation layer (108) formed on the contact layer (106) and an under-bump metallurgy (UBM) (216) formed on at least a portion of the final passivation layer (108). The contact layer (106) includes a plurality of contacts pads (106A) for providing external access to the electronic circuitry (104). The final passivation layer (108) includes a plurality of windows that extend through the final passivation layer (108) to the contact pads (106A). The UBM (216) includes an aluminum layer having a thickness of about 800 angstroms to about 1200 angstroms, a nickel/vanadium (Ni/V) layer having a thickness of about 800 angstroms to about 1200 angstroms and a copper (Cu) layer having a thickness of about 800 angstroms to about 1200 angstroms.

公开(公告)号：EP1487016A3

公开(公告)日：2006-10-04

申请号：EP04076664.4

申请日：2004-06-04

Applicant: Delphi Technologies, Inc.

Inventor： Mithal, Pankaj ,  Higdon, William D. ,  Gose, Mark W. ,  Dikeman, John M.

IPC: H01L23/485 ,  H01L21/60

CPC classification number: H01L24/02 ,  H01L23/528 ,  H01L24/10 ,  H01L2224/0401 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14

Abstract: A metal runner that improves the current-carrying capability of solder bumps used to electrically connect a surface-mount circuit device to a substrate. The runner comprises at least one leg portion and a pad portion, with the pad portion having a continuous region and a plurality of separate electrical paths leading to and from the continuous region. The electrical paths are delineated in the pad portion by nonconductive regions defined in the pad portion, with at least some of the nonconductive regions extending into the leg portion. The multiple electrical paths split the current flow to and from the solder bump, distributing the current around the perimeter of the solder bump in a manner that reduces current density in regions of the solder bump where electromigration is most likely.

公开(公告)号：EP1487016A2

公开(公告)日：2004-12-15

申请号：EP04076664.4

申请日：2004-06-04

Applicant: Delphi Technologies, Inc.

Inventor： Mithal, Pankaj ,  Higdon, William D. ,  Gose, Mark W. ,  Dikeman, John M.

IPC: H01L23/485 ,  H01L21/60

CPC classification number: H01L24/02 ,  H01L23/528 ,  H01L24/10 ,  H01L2224/0401 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14

Abstract: A metal runner that improves the current-carrying capability of solder bumps used to electrically connect a surface-mount circuit device to a substrate. The runner comprises at least one leg portion and a pad portion, with the pad portion having a continuous region and a plurality of separate electrical paths leading to and from the continuous region. The electrical paths are delineated in the pad portion by nonconductive regions defined in the pad portion, with at least some of the nonconductive regions extending into the leg portion. The multiple electrical paths split the current flow to and from the solder bump, distributing the current around the perimeter of the solder bump in a manner that reduces current density in regions of the solder bump where electromigration is most likely.

Abstract translation: 金属流道，其提高用于将表面安装电路器件电连接到衬底的焊料凸块的载流能力。 流道包括至少一个支腿部分和垫部分，其中该焊盘部分具有连续区域和连续区域的多个分开的电路径。 电路通过限定在焊盘部分中的非导电区域在焊盘部分中描绘，其中至少一些非导电区域延伸到脚部分中。 多个电路径将电流流向和从焊料凸块分开，以以减少焊料凸块的电迁移最可能的区域中的电流密度的方式分布焊料凸块周边的电流。