公开(公告)号：EP1750305A3

公开(公告)日：2008-07-02

申请号：EP06076339.8

申请日：2006-06-30

Applicant: Delphi Technologies, Inc.

Inventor： Stepniak, Frank ,  Higdon, William D.

IPC: H01L23/485

CPC classification number: H01L24/10 ,  H01L24/05 ,  H01L24/13 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05572 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/81011 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/83102 ,  H01L2224/83191 ,  H01L2224/92125 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/00014 ,  H01L2224/05552 ,  H01L2924/00

Abstract: An integrated circuit (IC) (200) includes a semiconductor material (102), electronic circuitry (104) formed on the semiconductor material (102), a contact layer (106) formed on the electronic circuitry (104), a final passivation layer (108) formed on the contact layer (106) and an under-bump metallurgy (UBM) (216) formed on at least a portion of the final passivation layer (108). The contact layer (106) includes a plurality of contacts pads (106A) for providing external access to the electronic circuitry (104). The final passivation layer (108) includes a plurality of windows that extend through the final passivation layer (108) to the contact pads (106A). The UBM (216) includes an aluminum layer having a thickness of about 800 angstroms to about 1200 angstroms, a nickel/vanadium (Ni/V) layer having a thickness of about 800 angstroms to about 1200 angstroms and a copper (Cu) layer having a thickness of about 800 angstroms to about 1200 angstroms.

公开(公告)号：EP1750305A2

公开(公告)日：2007-02-07

申请号：EP06076339.8

申请日：2006-06-30

Applicant: Delphi Technologies, Inc.

Inventor： Stepniak, Frank ,  Higdon, William D.

IPC: H01L23/485

CPC classification number: H01L24/10 ,  H01L24/05 ,  H01L24/13 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05572 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/81011 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/83102 ,  H01L2224/83191 ,  H01L2224/92125 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/00014 ,  H01L2224/05552 ,  H01L2924/00

Abstract: An integrated circuit (IC) (200) includes a semiconductor material (102), electronic circuitry (104) formed on the semiconductor material (102), a contact layer (106) formed on the electronic circuitry (104), a final passivation layer (108) formed on the contact layer (106) and an under-bump metallurgy (UBM) (216) formed on at least a portion of the final passivation layer (108). The contact layer (106) includes a plurality of contacts pads (106A) for providing external access to the electronic circuitry (104). The final passivation layer (108) includes a plurality of windows that extend through the final passivation layer (108) to the contact pads (106A). The UBM (216) includes an aluminum layer having a thickness of about 800 angstroms to about 1200 angstroms, a nickel/vanadium (Ni/V) layer having a thickness of about 800 angstroms to about 1200 angstroms and a copper (Cu) layer having a thickness of about 800 angstroms to about 1200 angstroms.

Abstract translation: 集成电路（IC）（200）包括半导体材料（102），形成在半导体材料（102）上的电子电路（104），形成在电子电路（104）上的接触层（106），最终钝化层 （108），形成在所述接触层（106）上的凸起下金属（UBM）（216）和形成在所述最终钝化层（108）的至少一部分上的凸点状金属（UBM）。 接触层（106）包括用于提供对电子电路（104）的外部访问的多个接触焊盘（106A）。 最终钝化层（108）包括延伸穿过最终钝化层（108）到接触焊盘（106A）的多个窗口。 UBM（216）包括厚度约800埃至约1200埃的铝层，厚度约800埃至约1200埃的镍/钒（Ni / V）层和具有 约800埃至约1200埃的厚度。

公开(公告)号：EP1710832A3

公开(公告)日：2010-03-10

申请号：EP06075745.7

申请日：2006-03-30

Applicant: Delphi Technologies, Inc.

Inventor： Delheimer, Charles I. ,  Chaudhuri, Arun K. ,  Stepniak, Frank

IPC: H01L21/56 ,  H01L23/485

CPC classification number: H01L24/10 ,  H01L21/563 ,  H01L24/13 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/73203 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/0401

Abstract: An electronic assembly (400) includes an integrated circuit (IC) die (306), a substrate (302) and a no-flow underfill (310) applied between the IC die (306) and the substrate (302). The IC die (306) includes a plurality of conductive contacts formed on a surface of the die (306). The substrate (302) includes a plurality of conductive traces (304) formed on a surface of the substrate (302) and electrically connected to at least one of the conductive contacts by electrical interconnects (320). The interconnects (320) each include a polymer core having an electrically conductive solderable outer surface. The polymer core has a coefficient of thermal expansion (CTE) that approximately matches the CTE of the no-flow underfill (310).

公开(公告)号：EP1460684A1

公开(公告)日：2004-09-22

申请号：EP04075615.7

申请日：2004-02-26

Applicant: Delphi Technologies, Inc.

Inventor： Workman, Derek B. ,  Stepniak, Frank ,  Chaudhuri, Arun K. ,  Walsh, Matthew R.

IPC: H01L21/58 ,  H01L21/56 ,  H01L21/60 ,  C08L63/00 ,  C08K5/54

CPC classification number: H01L24/29 ,  C08K5/54 ,  H01L21/563 ,  H01L23/293 ,  H01L24/81 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/056 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81801 ,  H01L2224/83192 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00014

Abstract: A no-flow underfill material (20) and process suitable for underfilling a bumped circuit component (10). The underfill material (20) initially comprises a dielectric polymer material (22) in which is dispersed a precursor capable of reacting to form an inorganic filler (24). The underfill process generally entails dispensing the underfill material (20) over terminals (18) on a substrate (16), and then placing the component (10) on the substrate (16) so that the underfill material (20) is penetrated by the bumps (12) on the component (10) and the bumps (12) contact the terminals (18) on the substrate (16). The bumps (12) are then reflowed to form solid electrical interconnects (26) that are encapsulated by the resulting underfill layer (28). The precursor may be reacted to form the inorganic filler (24) either during or after reflow.

Abstract translation: 无流动底部填充材料（20）和适合于填充凸起电路部件（10）的工艺。 底部填充材料（20）最初包含介电聚合物材料（22），其中分散有能够反应形成无机填料（24）的前体。 底部填充过程通常需要将底部填充材料（20）分配在基底（16）上的端子（18）上，然后将部件（10）放置在基底（16）上，使得底部填充材料（20）被 组件（10）上的凸块（12）和凸块（12）接触基板（16）上的端子（18）。 然后将凸起（12）回流以形成由所形成的底部填充层（28）封装的固体电互连（26）。 在回流期间或之后，可以将前体反应以形成无机填料（24）。

公开(公告)号：EP1333079A1

公开(公告)日：2003-08-06

申请号：EP03075164.8

申请日：2003-01-17

Applicant: Delphi Technologies, Inc.

Inventor： Chaudhuri, Arun K. ,  Stepniak, Frank ,  Walsh, Matthew R.

IPC: C09J9/02 ,  C09J163/00 ,  C08K3/08 ,  C08K9/02

CPC classification number: H05K3/321 ,  C08L63/00 ,  C09J9/02 ,  C09J163/00 ,  H01B1/22 ,  H05K3/3489 ,  H05K2201/0218 ,  H05K2203/0425

Abstract: A conductive adhesive material (12) characterized by metallurgical bonds (24) between electrically-conductive particles (20) dispersed in a polymer matrix (22) of the material (12). The polymer matrix (22) has a fluxing capability when heated to reduce metal oxides on the surfaces of the particles (20). At least the outer surfaces of the particles (20) are formed of a fusible material, so that sufficiently heating the conductive adhesive material (12) will reduce metal oxides on the particles (20), and at least partially melt the fusible metal, enabling the particles (20) to metallurgically bond to each other and to metal surfaces (14,16,44,46,54,56) contacted by the adhesive material (12).

Abstract translation: 导电粘合剂材料（12），其特征在于分散在材料（12）的聚合物基体（22）中的导电颗粒（20）之间的冶金结合（24）。 聚合物基体（22）在加热时具有助熔能力，以减少颗粒（20）表面上的金属氧化物。 至少颗粒（20）的外表面由易熔材料形成，使得充分加热导电粘合剂材料（12）将减少颗粒（20）上的金属氧化物，并且至少部分地熔化可熔金属，使得能够 所述颗粒（20）彼此冶金地结合并与由所述粘合剂材料（12）接触的金属表面（14,16,44,46,54,56）。

公开(公告)号：EP1710832A2

公开(公告)日：2006-10-11

申请号：EP06075745.7

申请日：2006-03-30

Applicant: Delphi Technologies, Inc.

Inventor： Delheimer, Charles I. ,  Chaudhuri, Arun K. ,  Stepniak, Frank

IPC: H01L21/56 ,  H01L23/485

CPC classification number: H01L24/10 ,  H01L21/563 ,  H01L24/13 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/73203 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/0401

Abstract: An electronic assembly (400) includes an integrated circuit (IC) die (306), a substrate (302) and a no-flow underfill (310) applied between the IC die (306) and the substrate (302). The IC die (306) includes a plurality of conductive contacts formed on a surface of the die (306). The substrate (302) includes a plurality of conductive traces (304) formed on a surface of the substrate (302) and electrically connected to at least one of the conductive contacts by electrical interconnects (320). The interconnects (320) each include a polymer core having an electrically conductive solderable outer surface. The polymer core has a coefficient of thermal expansion (CTE) that approximately matches the CTE of the no-flow underfill (310).

Abstract translation: 电子组件（400）包括施加在IC管芯（306）和衬底（302）之间的集成电路（IC）管芯（306），衬底（302）和不流动底部填充物（310）。 IC芯片（306）包括形成在模具（306）的表面上的多个导电触点。 衬底（302）包括形成在衬底（302）的表面上并通过电互连（320）电连接到至少一个导电触点的多个导电迹线（304）。 互连（320）各自包括具有导电可焊接外表面的聚合物芯。 聚合物芯具有与无流动底部填充物（310）的CTE近似匹配的热膨胀系数（CTE）。

公开(公告)号：EP1391261A1

公开(公告)日：2004-02-25

申请号：EP03077387.3

申请日：2003-07-30

Applicant: Delphi Technologies, Inc.

Inventor： Yeh, Shing ,  Carter, Bradley H. ,  Stepniak, Frank ,  Brandenburg, Scott D.

IPC: B23K35/26 ,  H05K3/34

CPC classification number: B23K35/262 ,  B23K2201/36 ,  H01L24/81 ,  H01L2224/81801 ,  H01L2924/01087 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/14 ,  H05K3/3436 ,  H05K3/3463 ,  Y10T428/12528 ,  Y10T428/12715 ,  Y10T428/12903 ,  Y10T428/24917 ,  H01L2924/00

Abstract: A tin-lead solder alloy containing copper and optionally silver as its alloying constituents. The solder alloy consists essentially of, by weight, about 55% to about 75% tin, about 11% to about 44% lead, up to about 4% silver, nickel, palladium, platinum and/or gold, greater than 1% to about 10% copper, and incidental impurities. The solder alloys contain a small portion of CuSn intermetallic compounds, and exhibit a melting mechanism in which all but the intermetallic compounds melt within a narrow temperature range, though the actual liquidus temperature of the alloys may be considerably higher, such that the alloys can be treated as requiring peak reflow temperatures of about 250°C or less. The intermetallic compounds precipitate out to form a diffusion barrier that increases the reliability of solder connections formed therewith.

Abstract translation: 包含铜和任选的银作为其合金成分的锡铅焊料合金。 焊料合金基本上由重量计约55％至约75％的锡，约11％至约44％的铅，至多约4％的银，镍，钯，铂和/或金，大于1％ 约10％的铜和杂质。 焊料合金含有少量的CuSn金属间化合物，并且表现出熔融机理，其中除了金属间化合物之外，所有金属间化合物都在窄的温度范围内熔化，尽管合金的实际液相线温度可能相当高，使得合金可以 处理为需要约250℃或更低的回流温度。 金属间化合物沉淀出来形成扩散阻挡层，从而增加与其形成的焊料连接的可靠性。