2.
    发明专利
    未知

    公开(公告)号:DE602005011626D1

    公开(公告)日:2009-01-22

    申请号:DE602005011626

    申请日:2005-07-21

    Applicant: EBARA CORP

    Abstract: A polishing apparatus detects the escape of a substrate from a top ring during polishing. The polishing apparatus includes a polishing table having a polishing pad, a top ring, and a substrate escape detection section for detecting escape of the substrate from the top ring. The detection section includes a light irradiation member for irradiating an area of the upper surface of the polishing pad with light, a controller for controlling the light irradiation of the light irradiation member, an image-taking member for taking an image of the area irradiated with the light, and an information processing member for processing information outputted from the image-taking member. The controller controls the light irradiation member in such a manner that it performs light irradiation at least for a period of time during which the substrate is regarded as being in contact with the polishing pad.

    POLISHING APPARATUS AND POLISHING METHOD
    3.
    发明公开
    POLISHING APPARATUS AND POLISHING METHOD 有权
    POLIERVORRICHTUNG UND POLIERVERFAHREN

    公开(公告)号:EP1639630A4

    公开(公告)日:2009-07-29

    申请号:EP04747150

    申请日:2004-07-01

    Applicant: EBARA CORP

    CPC classification number: B24B49/03 B24B37/042 H01L21/3212

    Abstract: A polishing apparatus has a polishing section (302) configured to polish a substrate and a measurement section (307) configured to measure a thickness of a film formed on the substrate. The polishing apparatus also has an interface (310) configured to input a desired thickness of a film formed on a substrate to be polished and a storage device (308a) configured to store polishing rate data on at least one past substrate therein. The polishing apparatus includes an arithmetic unit (308b) operable to calculate a polishing rate and an optimal polishing time based on the polishing rate data and the desired thickness by using a weighted average method which weights the polishing rate data on a lately polished substrate.

    Abstract translation: 研磨装置具有对基板进行研磨的研磨部(302)和测量形成在基板上的膜的厚度的测量部(307)。 抛光设备还具有构造为输入形成在待抛光基板上的膜的期望厚度的界面(310)和构造成将抛光速率数据存储在其中至少一个过去基板上的存储装置(308a)。 抛光装置包括运算单元(308b),该运算单元(308b)通过使用在最近抛光的衬底上对抛光速率数据进行加权的加权平均方法,基于抛光速率数据和期望厚度来计算抛光速率和最佳抛光时间。

    Polishing device, substrate handling device, and substrate jump-out detecting method
    4.
    发明专利
    Polishing device, substrate handling device, and substrate jump-out detecting method 有权
    抛光装置,基板处理装置和基板切断检测方法

    公开(公告)号:JP2006035328A

    公开(公告)日:2006-02-09

    申请号:JP2004214598

    申请日:2004-07-22

    CPC classification number: B24B37/0053 B24B49/12

    Abstract: PROBLEM TO BE SOLVED: To provide a polishing device capable of detecting jump-out of a wafer from a top ring without causing photo-corrosion of the wafer.
    SOLUTION: The polishing device provided with the top ring 21 holding and rotating the wafer W, and a polishing table 10 provided with a polishing pad 11, polishes the wafer W by bringing the wafer W into sliding contact with the polishing pad 11. The polishing device is provided with a wafer jump-out detecting means comprising an LED lighting system 26 for irradiating the upper face of the polishing pad 11 with light, a controller 32 for controlling the LED lighting system 26, and a CCD camera 27 for acquiring the upper face image of the polishing pad 11, and an image processor 31 for processing information outputted from the CCD camera 27. Light irradiation is started immediately before or at the moment of determining that the wafer has abutted on the polishing pad 11.
    COPYRIGHT: (C)2006,JPO&NCIPI

    Abstract translation: 要解决的问题:提供一种能够从顶环检测晶片跳出而不引起晶片的光腐蚀的抛光装置。 解决方案:设置有保持和旋转晶片W的顶环21的抛光装置和设置有抛光垫11的抛光台10,通过使晶片W与抛光垫11滑动接触来抛光晶片W 抛光装置设置有晶片跳出检测装置,包括用于用光照射抛光垫11的上表面的LED照明系统26,用于控制LED照明系统26的控制器32和用于 获取抛光垫11的上脸图像,以及用于处理从CCD相机27输出的信息的图像处理器31.在确定晶片已经抵靠在抛光垫11上之前或之前开始照射光。 P>版权所有(C)2006,JPO&NCIPI

    Method of operating substrate processing apparatus, and substrate processing apparatus
    6.
    发明专利
    Method of operating substrate processing apparatus, and substrate processing apparatus 有权
    基板加工装置的操作方法以及基板处理装置

    公开(公告)号:JP2009200476A

    公开(公告)日:2009-09-03

    申请号:JP2009004315

    申请日:2009-01-13

    CPC classification number: H01L21/67751 B24B37/345

    Abstract: PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which can reduce risk of disabled treatment of a substrate by continuously performing a part of processing for the substrate, cleaning and recovering the substrate, and easily ejecting the substrate from the apparatus to the outside, so far as it does not result in serious failure, when a trouble occurs in the substrate processing apparatus, without having to stop the system as a whole. SOLUTION: In the method for operating the substrate processing apparatus consisting of a polishing part 3, a cleaning part 4 and a transporting mechanisms 7, 22, when either the polishing part 3, the cleaning part 4 or the transporting mechanisms 7, 22 detects an abnormality, the apparatus sorts a substrate according to a location where the abnormality is detected and a position for the substrate in the substrate processing apparatus, and performs processes for the substrate after malfunction detection by changing at each sorted substrate. COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题:提供一种基板处理装置,其可以通过连续地进行基板的处理的一部分,清洗和回收基板,并且容易地将该基板从该装置喷射到基板上,从而降低基板的不能处理的风险 只要不会导致严重故障,当基板处理装置发生故障时,无需停止整个系统。 解决方案:在用于操作由研磨部3,清洁部4和输送机构7,22组成的基板处理装置的方法中,当抛光部3,清洁部4或输送机构7, 22检测异常,该装置根据检测到异常的位置和基板处理装置中的基板的位置对基板进行排序,并且通过在每个分选的基板上进行变换来对故障检测后的基板进行处理。 版权所有(C)2009,JPO&INPIT

    SUBSTRATE PROCESSING APPARATUS AND OPERATION METHOD OF THE SAME

    公开(公告)号:JP2013254964A

    公开(公告)日:2013-12-19

    申请号:JP2013147878

    申请日:2013-07-16

    Applicant: EBARA CORP

    Abstract: PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which enables an operator to easily and safely enter into the apparatus and collect substrates in the apparatus when malfunctions occur in the apparatus.SOLUTION: A substrate processing apparatus includes: a first processing part performing a first process to substrates W; a second processing part performing a second process; and transfer mechanisms 7, 22 transferring the substrates W. The substrate processing apparatus includes a door which is locked during the normal operation and may be opened and closed by releasing the lock after abnormality is detected so that an operator collects the substrates W, which are in processes before and after the first process, from the apparatus before the second process and puts the substrates W in the apparatus for performing the second process when the abnormality is detected in one of devices in the apparatus.

    Method and apparatus for polishing substrate
    8.
    发明专利
    Method and apparatus for polishing substrate 审中-公开
    抛光底材的方法和装置

    公开(公告)号:JP2005347568A

    公开(公告)日:2005-12-15

    申请号:JP2004166202

    申请日:2004-06-03

    Abstract: PROBLEM TO BE SOLVED: To provide a polishing method and polishing apparatus capable of reducing rework caused by overpolishing or risk of yield reduction.
    SOLUTION: A substrate polishing apparatus 1 includes a polishing section 3 configured to press a substrate onto a polishing pad and to mutually slide and move the substrate and the polishing pad so as to polish the substrate; a measuring instrument configured to measure at least one of parameters of groove depth on the surface of the polishing pad, roughness, temperature and thickness of the polishing pad; a measuring instrument 300 configured to measure a thickness of a film formed on the substrate; and a control unit 8 configured to optimize the polish treatment time of the substrate to be polished next based on the transition of a polishing rate just from the exchange of the polishing pad to the next timing of exchange, correlation with the parameter, the measurement of the parameter and a result of measuring the thickness of the film before and after polishing. The polishing rate is the thickness of the film per unit time removed from the substrate by polishing, and the polish treatment time is a time required for polishing one substrate at a predetermined polishing rate.
    COPYRIGHT: (C)2006,JPO&NCIPI

    Abstract translation: 要解决的问题:提供能够减少由过度抛光引起的返工或降低成品率的抛光方法和抛光装置。 解决方案:基板抛光装置1包括:抛光部分3,被配置为将基板压在抛光垫上并相互滑动并移动基板和抛光垫以抛光基板; 测量仪器,被配置为测量抛光垫表面上的凹槽深度的参数中的至少一个,抛光垫的粗糙度,温度和厚度; 被配置为测量形成在基板上的膜的厚度的测量仪器300; 以及控制单元8,其被配置为基于刚刚从抛光垫的更换到下一个交换时间的抛光速度的转变,接下来优化待抛光的基板的抛光处理时间,与参数的相关性, 该参数和研磨前后膜厚度的测定结果。 研磨速度是通过研磨从基板除去的每单位时间膜的厚度,抛光处理时间是以规定的研磨速度研磨一个基板所需的时间。 版权所有(C)2006,JPO&NCIPI

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