公开(公告)号：KR20180041580A

公开(公告)日：2018-04-24

申请号：KR20170129460

申请日：2017-10-11

Applicant: EBARA CORP

Inventor： SHIMOYAMA MASASHI ,  FUJIKATA JUMPEI ,  NISHIURA FUMITOSHI ,  KISHI TAKASHI

IPC: C25D3/38 ,  C25D5/08 ,  C25D21/14

CPC classification number: C25D3/28 ,  C01G3/02 ,  C01P2004/61 ,  C25D17/02 ,  C25D17/10 ,  C25D21/12

Abstract: 본발명은, 도금에의하여형성되는구리막의질의저하를방지할수 있는용해성의산화구리분체를제공한다. 기판 W의도금용의도금액에공급되는산화구리분체는, 구리와, 나트륨을포함하는복수의불순물을포함한다. 나트륨의농도는 20ppm 이하이다. 산화구리분체는도금액중에정기적으로공급된다. 도금액중에침지된불용해애노드(8)와기판 W 사이에전압이인가되어, 기판 W 상에구리막이형성된다.

公开(公告)号：KR20180016941A

公开(公告)日：2018-02-20

申请号：KR20170095112

申请日：2017-07-27

Applicant: EBARA CORP

Inventor： MITSUYA TAKASHI ,  KOIZUMI RYUYA ,  YOKOYAMA TOSHIO ,  SHIMOYAMA MASASHI ,  OISHI KUNIO

IPC: C25D17/00 ,  C25D17/06 ,  C25D21/12 ,  H01L21/288

CPC classification number: C25D17/001 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/76879 ,  H01L24/11 ,  H01L2224/11462 ,  H01L2224/117

Abstract: 기판에도금처리를행하기위한도금조와, 상기기판의실제도금막두께를측정하는센서와, 상기도금조에공급하는도금전류및 상기도금조에있어서의상기기판의도금시간을제어하는제어장치를구비하고, 상기제어장치는, 도금처리의레시피로서, 목표도금막두께, 도금전류및 도금시간을설정가능하고, 상기실제도금막두께가상기목표도금막두께로되도록, 상기도금전류및 상기도금시간중 적어도하나를자동적으로보정하고, 후속의기판의도금처리에반영시키는도금장치.

Abstract translation: 1.一种电镀系统，其特征在于，具备：对基板实施板加工的电镀槽，测定该电路板的实际电镀膜厚度的传感器，以及控制向该电镀槽供给的电镀电流的控制部， 镀槽内的基材。 控制器能够设定目标电镀膜厚度，电镀电流和电镀时间作为印版处理配方。 自动校正电镀电流和电镀时间中的至少一个，使得实际电镀膜厚度和目标电镀膜厚度彼此相等，并且结果反映在用于后续基板的电镀处理中。

公开(公告)号：KR20200145800A

公开(公告)日：2020-12-30

申请号：KR20200179186

申请日：2020-12-21

Applicant: EBARA CORP

Inventor： MASUDA YASUYUKI ,  SHIMOYAMA MASASHI ,  KISHI TAKASHI

IPC: C25D17/00 ,  C25D5/00 ,  C25D7/12 ,  C25D17/06 ,  C25D21/12

Abstract: 기판표면의친수성을향상시킴과함께, 기판마다친수성의정도가변동되는것을억제한다. 레지스트패턴을갖는기판에도금처리를행하는도금장치가제공된다. 이도금장치는, 기판의표면에전처리액을접촉시키는전처리유닛과, 피처리면에전처리액을접촉시킨기판에도금처리를행하는도금조를갖는다. 전처리유닛은, 기판의피처리면을상향으로보유지지하는보유지지대와, 보유지지대를회전시키도록구성된모터와, 피처리면에자외선을조사하도록구성된친수화처리부와, 친수화처리부에의해친수화된피처리면에전처리액을공급하도록구성된전처리액공급부를갖는다.

公开(公告)号：KR20180071161A

公开(公告)日：2018-06-27

申请号：KR20170146508

申请日：2017-11-06

Applicant: EBARA CORP

Inventor： MASUDA YASUYUKI ,  SHIMOYAMA MASASHI ,  KISHI TAKASHI

IPC: C25D17/00 ,  C25D5/00 ,  C25D7/12 ,  C25D17/06 ,  C25D21/12

CPC classification number: C25D5/02 ,  C25D17/06 ,  C25D17/12 ,  C25D21/04 ,  C25D21/10 ,  C25D21/14 ,  H01L21/288

Abstract: 기판표면의친수성을향상시킴과함께, 기판마다친수성의정도가변동되는것을억제한다. 레지스트패턴을갖는기판에도금처리를행하는도금장치가제공된다. 이도금장치는, 기판의표면에전처리액을접촉시키는전처리유닛과, 피처리면에전처리액을접촉시킨기판에도금처리를행하는도금조를갖는다. 전처리유닛은, 기판의피처리면을상향으로보유지지하는보유지지대와, 보유지지대를회전시키도록구성된모터와, 피처리면에자외선을조사하도록구성된친수화처리부와, 친수화처리부에의해친수화된피처리면에전처리액을공급하도록구성된전처리액공급부를갖는다.

公开(公告)号：DE69101109T2

公开(公告)日：1994-05-05

申请号：DE69101109

申请日：1991-03-12

Applicant: EBARA CORP ,  AGENCY IND SCIENCE TECHN

Inventor： YABE AKIRA ,  NIINO HIROYUKI ,  SHIMOYAMA MASASHI

IPC: B01J19/12 ,  B23K26/00 ,  B29C35/08 ,  B29C59/16 ,  B29C70/88 ,  C08J5/18 ,  C08J7/00 ,  H01B1/12 ,  H01B13/00

Abstract: PCT No. PCT/JP91/00333 Sec. 371 Date Jun. 30, 1992 Sec. 102(e) Date Jun. 30, 1992 PCT Filed Mar. 12, 1991 PCT Pub. No. WO91/13680 PCT Pub. Date Sep. 19, 1991.A thin electroconductive film is formed by irradiating a shaped article of chlorinated vinyl polymer with a pulsive light having a pulse duration of not greater than 100 nsec., a fluence of above about 15 mJ/cm2/pulse and below that at which the polymer is subject to ablation, a laser wavelength of from about 190 to about 300 nm, and repetition frequency of above about 1 Hz and below that at which the polymer is subject to deformation and/or decomposition by a regenerative function of irradiation, under vacuum or in an oxygen-free atmosphere, thereby irradiating the article with total photon numbers of at least 1x1018/cm2 without causing photocrosslinking, oxidation or cleavage of the backbone chain. The invention does not use materials other than the starting polymer such as solvents or strong bases that can contaminate the thin film during a dehydrochlorination, so there is no need to remove solvents after reaction and no residual salts will be formed in the dehydrochlorination.

公开(公告)号：CA2516729A1

公开(公告)日：2004-09-10

申请号：CA2516729

申请日：2004-02-24

Applicant: EBARA CORP

Inventor： SHIMOYAMA MASASHI ,  AKIYAMA EIICHI ,  TAKEDA KAZUYOSHI ,  YOKOTA HIROSHI

IPC: H01B1/04 ,  D01F11/10 ,  H01M4/62 ,  H01M4/96 ,  H01M4/02 ,  H01M4/60

公开(公告)号：CA2051473A1

公开(公告)日：1993-03-17

申请号：CA2051473

申请日：1991-09-16

Applicant: EBARA CORP

Inventor： SHIMOYAMA MASASHI ,  KINOSHITA KAZUO ,  TSUCHIYA NAOKI ,  FUKATSU TOHRU

IPC: G02B6/032 ,  G02B6/10 ,  G02B6/42

Abstract: A hollow waveguide for ultraviolet wavelength region laser beams, comprising: a glass tube composed of a glass material exhibiting a high transmissivity with respect to ultraviolet rays and an excellent environment resistant property, the glass tube serving as an inner surface of the waveguide; and a metal film exhibiting a high reflectivity with respect to the ultraviolet rays and formed outside the glass tube. The ultraviolet wavelength region laser beams are transmitted while being reflected by the inner surface of the glass tube and by an interface between the glass tube and the metal film.

公开(公告)号：DE69101109D1

公开(公告)日：1994-03-10

申请号：DE69101109

申请日：1991-03-12

Applicant: EBARA CORP ,  AGENCY IND SCIENCE TECHN

Inventor： YABE AKIRA ,  NIINO HIROYUKI ,  SHIMOYAMA MASASHI

IPC: B01J19/12 ,  B23K26/00 ,  B29C35/08 ,  B29C59/16 ,  B29C70/88 ,  C08J5/18 ,  C08J7/00 ,  H01B1/12 ,  H01B13/00

Abstract: PCT No. PCT/JP91/00333 Sec. 371 Date Jun. 30, 1992 Sec. 102(e) Date Jun. 30, 1992 PCT Filed Mar. 12, 1991 PCT Pub. No. WO91/13680 PCT Pub. Date Sep. 19, 1991.A thin electroconductive film is formed by irradiating a shaped article of chlorinated vinyl polymer with a pulsive light having a pulse duration of not greater than 100 nsec., a fluence of above about 15 mJ/cm2/pulse and below that at which the polymer is subject to ablation, a laser wavelength of from about 190 to about 300 nm, and repetition frequency of above about 1 Hz and below that at which the polymer is subject to deformation and/or decomposition by a regenerative function of irradiation, under vacuum or in an oxygen-free atmosphere, thereby irradiating the article with total photon numbers of at least 1x1018/cm2 without causing photocrosslinking, oxidation or cleavage of the backbone chain. The invention does not use materials other than the starting polymer such as solvents or strong bases that can contaminate the thin film during a dehydrochlorination, so there is no need to remove solvents after reaction and no residual salts will be formed in the dehydrochlorination.

公开(公告)号：EP1598448A4

公开(公告)日：2007-03-07

申请号：EP03782895

申请日：2003-12-25

Applicant: EBARA CORP

Inventor： SHIMOYAMA MASASHI ,  YOKOTA HIROSHI ,  KIUMI REI ,  KURIYAMA FUMIO ,  SAITO NOBUTOSHI

IPC: C25D3/60 ,  C25D5/50 ,  C25D21/14 ,  H01L21/288 ,  H01L21/48 ,  H01L21/60 ,  H01L23/485 ,  H01L23/498 ,  H05K3/34 ,  C25D7/12

CPC classification number: H01L24/12 ,  C25D3/60 ,  C25D5/505 ,  C25D21/14 ,  H01L21/2885 ,  H01L21/4853 ,  H01L23/49816 ,  H01L24/11 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/056 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01092 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H05K3/3436 ,  H05K3/3463 ,  H01L2924/00014

Abstract: The present invention relates to a lead-free bump with suppressed formation of voids, obtained by reflowing a plated film of Sn-Ag solder alloy having an adjusted Ag content, and a method of forming the lead-free bump. The lead-free bump of the present invention is obtained by forming an Sn-Ag alloy film having an Ag content lower than that of an Sn-Ag eutectic composition by plating and reflowing the plated alloy film.