公开(公告)号：US20200335394A1

公开(公告)日：2020-10-22

申请号：US16090059

申请日：2017-03-29

Applicant: EBARA CORPORATION

Inventor： Keiichi KURASHINA ,  Taiki ISHITSUKA ,  Shinji OMATA ,  Mitsuhiro SHAMOTO ,  Makoto KUBOTA

IPC: H01L21/768 ,  H01L21/02 ,  H01L23/532 ,  H01L23/00

Abstract: To prevent a tin alloy from coming into contact with a copper wiring layer when a tin alloy bump layer is reflowed. According to an aspect of the present invention, a method of manufacturing a substrate having a bump at a resist opening is provided. The method of manufacturing a substrate includes a step of forming a copper wiring layer on the substrate by plating at a first temperature, a step of forming a barrier layer on the copper wiring layer by plating at a second temperature that is approximately equal to the first temperature, and a step of forming a tin alloy bump layer on the barrier layer by plating.

公开(公告)号：US20170358472A1

公开(公告)日：2017-12-14

申请号：US15690025

申请日：2017-08-29

Applicant: EBARA CORPORATION

Inventor： Toshio YOKOYAMA ,  Masahiko SEKIMOTO ,  Kenichi KOBAYASHI ,  Kenichi AKAZAWA ,  Takashi MITSUYA ,  Keiichi KURASHINA

IPC: H01L21/677 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01L21/67718 ,  H01L21/67086 ,  H01L21/67751 ,  H01L21/68707

Abstract: A substrate processing apparatus according to the present invention comprises a transferring device including a grasping section configured to grasp a substrate holder, and a transferring section configured to transfer the substrate holder grasped by the grasping section, and a processing bath for storing a substrate held by the substrate holder so that a surface of the substrate is vertically oriented, and processing the substrate. The grasping section is configured to grasp the substrate holder with a surface of the substrate oriented horizontally. The transferring section is configured to transfer the substrate holder above the processing bath, with the surface of the substrate oriented horizontally.

公开(公告)号：US20160284571A1

公开(公告)日：2016-09-29

申请号：US15076265

申请日：2016-03-21

Applicant: EBARA CORPORATION

Inventor： Keiichi KURASHINA ,  Toshio YOKOYAMA

IPC: H01L21/67 ,  H01L21/673

Abstract: The substrate processing apparatus includes a processing chamber including an outer chamber configured to hold a processing liquid and an inner chamber capable of surrounding the substrate held by the substrate holder; a liquid delivery pipe having one end coupled to a bottom of the inner chamber and other end coupled to the outer chamber; a pump configured to suck the processing liquid from the inner chamber through the liquid delivery pipe and to deliver the processing liquid to the outer chamber through the liquid delivery pipe; and a guide cover having a through-hole in which the substrate holder can be inserted. The guide cover is located below an upper end of the outer chamber and above the inner chamber.

Abstract translation: 基板处理装置包括处理室，该处理室包括被配置为保持处理液体的外室和能够围绕由基板保持器保持的基板的内室; 液体输送管，其一端联接到内室的底部，另一端联接到外室; 构造成通过所述液体输送管从所述内部室吸收所述处理液并将所述处理液通过所述液体输送管输送到所述外部室的泵; 以及具有可以插入基板保持件的通孔的引导盖。 引导盖位于外腔的上端下方并在内腔的上方。

公开(公告)号：US20150270151A1

公开(公告)日：2015-09-24

申请号：US14666196

申请日：2015-03-23

Applicant: EBARA CORPORATION

Inventor： Toshio YOKOYAMA ,  Masahiko SEKIMOTO ,  Kenichi KOBAYASHI ,  Kenichi AKAZAWA ,  Takashi MITSUYA ,  Keiichi KURASHINA

IPC: H01L21/677

CPC classification number: H01L21/67718 ,  H01L21/67086 ,  H01L21/67751 ,  H01L21/68707

Abstract: A substrate processing apparatus according to the present invention comprises a transferring device including a grasping section configured to grasp a substrate holder, and a transferring section configured to transfer the substrate holder grasped by the grasping section, and a processing bath for storing a substrate held by the substrate holder so that a surface of the substrate is vertically oriented, and processing the substrate. The grasping section is configured to grasp the substrate holder with a surface of the substrate oriented horizontally. The transferring section is configured to transfer the substrate holder above the processing bath, with the surface of the substrate oriented horizontally.

Abstract translation: 根据本发明的基板处理装置包括转印装置，该转印装置包括构造成夹持基板保持器的把持部，以及转印部，其被配置为转印由该抓持部抓住的基板支架，以及用于存储由 衬底保持器，使得衬底的表面垂直取向，并处理衬底。 把持部被配置为将基板的表面水平取向地抓握基板保持件。 转印部分被配置为将衬底保持器转移到处理槽上方，其中衬底的表面水平定向。

公开(公告)号：US20160042993A1

公开(公告)日：2016-02-11

申请号：US14920104

申请日：2015-10-22

Applicant: EBARA CORPORATION

Inventor： Akira SUSAKI ,  Keiichi KURASHINA

IPC: H01L21/768 ,  C23F1/18

CPC classification number: H01L21/76883 ,  C09G1/02 ,  C09G1/04 ,  C09K13/00 ,  C09K13/02 ,  C09K13/06 ,  C23F1/10 ,  C23F1/14 ,  C23F1/16 ,  C23F1/18 ,  C23F1/44 ,  H01L21/30604 ,  H01L21/32134 ,  H01L21/76802 ,  H01L21/76879 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/03614 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05647 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13157 ,  H05K3/067 ,  H01L2924/00014 ,  H01L2924/01029

Abstract: An etching liquid which can selectively remove only a copper layer in an etching process of a multilayer structure including a cobalt layer and the copper layer is disclosed. The etching liquid is an etching liquid for etching the copper layer in the multilayer structure including the copper layer and the cobalt layer. This etching liquid includes at least one acid selected from a group consisting of citric acid, oxalic acid, malic acid, and malonic acid, and hydrogen peroxide, the etching liquid having pH in a range of 4.3 to 5.5.

Abstract translation: 公开了一种能够在包括钴层和铜层的多层结构的蚀刻工艺中仅选择性地除去铜层的蚀刻液。 蚀刻液是用于蚀刻包括铜层和钴层的多层结构中的铜层的蚀刻液。 该蚀刻液含有选自柠檬酸，草酸，苹果酸，丙二酸中的至少一种酸和过氧化氢，pH为4.3〜5.5的蚀刻液。

公开(公告)号：US20150270147A1

公开(公告)日：2015-09-24

申请号：US14666215

申请日：2015-03-23

Applicant: EBARA CORPORATION

Inventor： Kenichi KOBAYASHI ,  Masahiko SEKIMOTO ,  Toshio YOKOYAMA ,  Kenichi AKAZAWA ,  Keiichi KURASHINA ,  Takashi MITSUYA

IPC: H01L21/67 ,  B25J11/00 ,  H01L21/687

CPC classification number: H01L21/67057 ,  B25J11/0095 ,  H01L21/67034 ,  H01L21/67173 ,  H01L21/67276 ,  H01L21/68721 ,  H01L21/68742

Abstract: A substrate processing apparatus capable of inhibiting diffusion of a chemical solution atmosphere around a processing bath. The substrate processing apparatus has a processing bath for storing a substrate holder holding a substrate and for processing the substrate, a lifter configured to support the substrate holder, store the substrate holder in the processing bath, and take out the substrate holder from the processing bath, and a cover configured to cover the periphery of the substrate holder taken out from the processing bath by the lifter.

Abstract translation: 能够抑制处理槽周围的化学溶液气氛扩散的基板处理装置。 基板处理装置具有用于存储保持基板并用于处理基板的基板保持件的处理槽，构造成支撑基板保持器的升降器，将基板保持器存储在处理槽中，并从处理槽取出基板保持件 以及盖，其构造成覆盖由所述升降机从所述处理槽取出的所述基板保持器的周边。

公开(公告)号：US20150191830A1

公开(公告)日：2015-07-09

申请号：US14589993

申请日：2015-01-05

Applicant: EBARA CORPORATION

Inventor： Akira SUSAKI ,  Keiichi KURASHINA

IPC: C23F1/18 ,  C09K13/00 ,  C09K13/02 ,  G03F7/40

CPC classification number: H01L21/76883 ,  C09G1/02 ,  C09G1/04 ,  C09K13/00 ,  C09K13/02 ,  C09K13/06 ,  C23F1/10 ,  C23F1/14 ,  C23F1/16 ,  C23F1/18 ,  C23F1/44 ,  H01L21/30604 ,  H01L21/32134 ,  H01L21/76802 ,  H01L21/76879 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/03614 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05647 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13157 ,  H05K3/067 ,  H01L2924/00014 ,  H01L2924/01029

Abstract: An etching Liquid which can selectively remove only a copper layer in an etching process of a multilayer structure including a cobalt layer and the copper layer is disclosed. The etching liquid is an etching liquid for etching the copper layer in the multilayer structure including the copper layer and the cobalt layer. This etching liquid includes at least one acid selected from a group consisting of citric acid, oxalic acid, malic acid, and malonic acid, and hydrogen peroxide, the etching liquid having pH in a range of 4.3 to 5.5.

Abstract translation: 公开了一种能够在包括钴层和铜层的多层结构的蚀刻工艺中仅选择性地除去铜层的蚀刻液。 蚀刻液是用于蚀刻包括铜层和钴层的多层结构中的铜层的蚀刻液。 该蚀刻液含有选自柠檬酸，草酸，苹果酸，丙二酸中的至少一种酸和过氧化氢，pH为4.3〜5.5的蚀刻液。