Abstract:
A polishing method and a polishing apparatus which can increase a polishing rate and can control a polishing profile of a substrate being polished by adjusting a surface temperature of a polishing pad are disclosed. The polishing method for polishing a substrate by pressing the substrate against a polishing pad on a polishing table includes a pad temperature adjustment step of adjusting a surface temperature of the polishing pad, and a polishing step of polishing the substrate by pressing the substrate against the polishing pad having the adjusted surface temperature. In the pad temperature adjustment step, the surface temperature of a part of an area of the polishing pad, the area being to be brought in contact with the substrate, is adjusted during the polishing step so that the rate of temperature change of a temperature profile in a radial direction of the surface of the polishing pad becomes constant in the radial direction of the polishing pad.
Abstract:
A polishing apparatus polishes a surface of a substrate by pressing the substrate against a polishing pad on a polishing table. The polishing apparatus is configured to control a temperature of the polishing surface of the polishing pad by blowing a gas on the polishing pad during polishing. The polishing apparatus includes a pad temperature control mechanism having at least one gas ejection nozzle for ejecting a gas toward the polishing pad and configured to blow the gas onto the polishing pad to control a temperature of the polishing pad, and an atomizer having at least one nozzle for ejecting a liquid or a mixed fluid of a gas and a liquid and configured to blow the liquid or the mixed fluid onto the polishing pad to remove foreign matters on the polishing pad. The pad temperature control mechanism and the atomizer are formed into an integral unit.
Abstract:
An apparatus for polishing a substrate includes a rotatable polishing table supporting a polishing pad, a substrate holder configured to hold the substrate and press the substrate against a polishing surface of the polishing pad on the rotating polishing table so as to polish the substrate, and a pad-temperature detector configured to measure a temperature of the polishing surface of the polishing pad. The apparatus also includes a pad-temperature regulator configured to contact the polishing surface to regulate the temperature of the polishing surface, and a temperature controller configured to control the temperature of the polishing surface by controlling the pad-temperature regulator based on information on the temperature of the polishing surface detected by the pad-temperature detector.
Abstract:
In one embodiment of the present invention, a cleaning member 90 is attached to the surface of a cleaning member attaching part 10. The cleaning member attaching part 10 has a main body 20, a cleaning liquid introduction part 30 extending inside the main body 20, and a plurality of cleaning liquid supply holes 40 communicating with the cleaning liquid introduction part 30. The cleaning liquid introduction part 30 is configured such that cleaning liquid flows in from a first end part 11 side, and an area proportion of the cleaning liquid supply holes 40 in a second region located on a second end part 12 side opposite to the first end part 11 to a surface of the main body 20 is larger than the area proportion of the cleaning liquid supply holes 40 in a first region located on the first end part 11 side to the surface of the main body 20.
Abstract:
In one embodiment of the present invention, a cleaning member 90 is attached to the surface of a cleaning member attaching part 10. The cleaning member attaching part 10 has a main body 20, a cleaning liquid introduction part 30 extending inside the main body 20, and a plurality of cleaning liquid supply holes 40 communicating with the cleaning liquid introduction part 30. The cleaning liquid introduction part 30 is configured such that cleaning liquid flows in from a first end part 11 side, and an area proportion of the cleaning liquid supply holes 40 in a second region located on a second end part 12 side opposite to the first end part 11 to a surface of the main body 20 is larger than the area proportion of the cleaning liquid supply holes 40 in a first region located on the first end part 11 side to the surface of the main body 20.
Abstract:
A polishing method and a polishing apparatus which can increase a polishing rate and can control a polishing profile of a substrate being polished by adjusting a surface temperature of a polishing pad are disclosed. The polishing method for polishing a substrate by pressing the substrate against a polishing pad on a polishing table includes a pad temperature adjustment step of adjusting a surface temperature of the polishing pad, and a polishing step of polishing the substrate by pressing the substrate against the polishing pad having the adjusted surface temperature. In the pad temperature adjustment step, the surface temperature of a part of an area of the polishing pad, the area being to be brought in contact with the substrate, is adjusted during the polishing step so that the rate of temperature change of a temperature profile in a radial direction of the surface of the polishing pad becomes constant in the radial direction of the polishing pad.
Abstract:
The present invention relates to a polishing apparatus having a surface-property measuring device for measuring surface properties of a polishing pad which is used to polish a substrate, such as semiconductor wafer, and a polishing system including such a polishing apparatus. The polishing apparatus includes a surface-property measuring device (30) for measuring surface properties of a polishing pad (2), a support arm (50) for supporting the surface-property measuring device (30), and a moving unit (53) coupled to the support arm (50) and configured to move the surface-property measuring device (30) from a retreat position to a measure position.
Abstract:
An apparatus for polishing a substrate includes a rotatable polishing table supporting a polishing pad, a substrate holder configured to hold the substrate and press the substrate against a polishing surface of the polishing pad on the rotating polishing table so as to polish the substrate, and a pad-temperature detector configured to measure a temperature of the polishing surface of the polishing pad. The apparatus also includes a pad-temperature regulator configured to contact the polishing surface to regulate the temperature of the polishing surface, and a temperature controller configured to control the temperature of the polishing surface by controlling the pad-temperature regulator based on information on the temperature of the polishing surface detected by the pad-temperature detector.
Abstract:
A polishing apparatus polishes a substrate by moving the substrate and a polishing pad relative to each other. The apparatus includes: an elastic modulus measuring device configured to measure an elastic modulus of the polishing pad, and a polishing condition adjustor configured to adjust polishing conditions of the substrate based on a measured value of the elastic modulus. The polishing conditions include pressure of a retaining ring, arranged around the substrate, exerted on the polishing pad and a temperature of the polishing pad.
Abstract:
A polishing apparatus polishes a substrate by moving the substrate and a polishing pad relative to each other. The apparatus includes: an elastic modulus measuring device configured to measure an elastic modulus of the polishing pad, and a polishing condition adjustor configured to adjust polishing conditions of the substrate based on a measured value of the elastic modulus. The polishing conditions include pressure of a retaining ring, arranged around the substrate, exerted on the polishing pad and a temperature of the polishing pad.