公开(公告)号：DE102005015789A1

公开(公告)日：2005-11-10

申请号：DE102005015789

申请日：2005-04-06

Applicant: ELPIDA MEMORY INC

Inventor： MICHIMATA SHIGETOMI ,  NAGAI RYO ,  YAMADA SATORU ,  NAKAMURA YOSHITAKA ,  NAKAMURA RYOICHI

IPC: H01L21/28 ,  H01L21/26 ,  H01L21/265 ,  H01L21/283 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/74 ,  H01L21/768 ,  H01L23/52 ,  H01L27/10 ,  H01L29/78

Abstract: A method includes the steps of: implanting boron into a surface region of a silicon substrate to form a p + diffused region; implanting indium into the surface of the p + diffused region, to form an indium-implanted layer; forming a contact metal layer on the indium-implanted layer; and reacting silicon in the silicon substrate including the indium-implanted layer with metal in the contact metal layer to form a titanium silicide layer.