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    Light-emitting device with reflective layer
    1.
    发明授权
    Light-emitting device with reflective layer 有权

    公开(公告)号：US10950758B2

    公开(公告)日：2021-03-16

    申请号：US16877840

    申请日：2020-05-19

    Applicant: EPISTAR CORPORATION

    Inventor： Chao-Hsing Chen ,  Jia-Kuen Wang ,  Wen-Hung Chuang ,  Tzu-Yao Tseng ,  Cheng-Lin Lu

    IPC: H01L33/00 ,  H01L33/40 ,  H01L33/22 ,  H01L33/46 ,  H01L33/42 ,  H01L33/62 ,  H01L33/32 ,  F21K9/23 ,  H01L33/06 ,  H01L33/12 ,  F21K9/232 ,  F21Y115/10 ,  F21K9/69

    Abstract: A light-emitting device comprises a semiconductor structure comprising a surface and a side wall inclined to the surface, wherein the semiconductor structure comprises a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, and the second semiconductor layer comprises a first edge and a first area; a reflective layer located on the second semiconductor layer and comprising an outer edge and a second area, wherein a distance between the first edge and the outer edge is greater than 0 μm and is not greater than 10 μm; and a first contact part comprising a metal formed on the reflective layer and the first semiconductor layer, wherein the first contact part comprises a first periphery comprising a first periphery length larger than a periphery length of the active layer from a top-view of the light-emitting device.

    Light-emitting device and manufacturing method thereof
    4.
    发明授权
    Light-emitting device and manufacturing method thereof 有权

    公开(公告)号：US12230740B2

    公开(公告)日：2025-02-18

    申请号：US17237825

    申请日：2021-04-22

    Applicant: EPISTAR CORPORATION

    Inventor： Jhih-Yong Yang ,  Hsin-Ying Wang ,  De-Shan Kuo ,  Chao-Hsing Chen ,  Yi-Hung Lin ,  Meng-Hsiang Hong ,  Kuo-Ching Hung ,  Cheng-Lin Lu

    IPC: H01L33/46 ,  H01L27/15 ,  H01L33/10 ,  H01L33/38 ,  H01L33/62

    Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer and an active area between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer including an upper surface; an exposed region formed in the semiconductor stack to expose the upper surface; a first protective layer covering the exposed region and a portion of the second semiconductor layer, wherein the first protective layer includes a first part with a first thickness formed on the upper surface and a second part with a second thickness formed on the second semiconductor layer, the first thickness is smaller than the second thickness; a first reflective structure formed on the second semiconductor layer and including one or multiple openings; and a second reflective structure formed on the first reflective structure and electrically connected to the second semiconductor layer through the one or multiple openings.

    Light-emitting device with reflective layer
    7.
    发明授权
    Light-emitting device with reflective layer 有权

    公开(公告)号：US10680136B2

    公开(公告)日：2020-06-09

    申请号：US16416488

    申请日：2019-05-20

    Applicant: EPISTAR CORPORATION

    Inventor： Chao-Hsing Chen ,  Jia-Kuen Wang ,  Wen-Hung Chuang ,  Tzu-Yao Tseng ,  Cheng-Lin Lu

    IPC: H01L33/00 ,  H01L33/40 ,  H01L33/22 ,  H01L33/46 ,  H01L33/42 ,  H01L33/62 ,  H01L33/32 ,  F21K9/23 ,  H01L33/06 ,  H01L33/12 ,  F21K9/232 ,  F21Y115/10 ,  F21K9/69

    Abstract: A light-emitting device comprises a semiconductor structure comprising a surface and a side wall inclined to the surface, wherein the semiconductor structure comprises a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, and the second semiconductor layer comprises a first edge and a first area; a reflective layer located on the second semiconductor layer and comprising an outer edge and a second area, wherein a distance between the first edge and the outer edge is greater than 0 μm and is not greater than 10 μm; and a first contact part comprising a metal formed on the reflective layer and the first semiconductor layer, wherein the first contact part comprises a first periphery comprising a first periphery length larger than a periphery length of the active layer from a top-view of the light-emitting device.

    Light-emitting device with a plurality of electrodes on a semiconductor stack
    10.
    发明授权
    Light-emitting device with a plurality of electrodes on a semiconductor stack 有权

    公开(公告)号：US11621374B2

    公开(公告)日：2023-04-04

    申请号：US17321078

    申请日：2021-05-14

    Applicant: EPISTAR CORPORATION

    Inventor： Chao-Hsing Chen ,  Cheng-Lin Lu ,  Chih-Hao Chen ,  Chi-Shiang Hsu ,  I-Lun Ma ,  Meng-Hsiang Hong ,  Hsin-Ying Wang ,  Kuo-Ching Hung ,  Yi-Hung Lin

    IPC: H01L33/00 ,  H01L31/0232 ,  H01L21/00 ,  H01L33/38 ,  H01L33/10 ,  H01L33/32 ,  H01L33/46 ,  H01L33/24 ,  H01L25/075 ,  H01L33/36

    Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate, and the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second side surface of the substrate by a distance.

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